Method for accurately characterizing crystal three-dimensional orientation and crystallographic orientation

Abstract

A method for accurately characterizing a crystal three-dimensional orientation and a crystallographic orientation, including the following steps: acquiring a two-dimensional structure topography and an EBSD pattern in an area to-be-detected of a crystal material; using three-dimensional image analysis software to perform three-dimensional image synthesis through so as to obtain a three-dimensional topography; extracting a three-dimensional orientation of a characteristic topography in a coordinate system where the three-dimensional topography is located; and by converting the three-dimensional orientation into a crystallographic coordinate system obtained by EBSD, obtaining the crystallographic orientation of the characteristic topography. By using the method, the orientation of characteristic organization structures of various materials and the crystallographic orientation may be simultaneously analyzed, which has a great significance for research on the material crystal growth orientation and growth behavior.

The invention claimed is: 
     
       1. A method for accurately characterizing a crystal three-dimensional orientation and a crystallographic orientation, comprising the following steps:
 S1 acquiring two-dimensional structure topographies of a series of cross sections in an area to-be-detected of a crystal material; 
 S2 acquiring an EBSD pattern in the area to-be-detected; 
 S3 using a three-dimensional image analysis software to perform three-dimensional image synthesis on the series of the two-dimensional structure topography acquired in step S1, to acquire a three-dimensional topography; 
 S4 establishing a conversion relationship between a crystallographic coordinate system acquired by EBSD and a coordinate system of the three-dimensional topography; 
 S5 extracting a three-dimensional orientation of a characteristic topography in the coordinate system from the three-dimensional topography synthesized in step S3; and 
 S6 converting the three-dimensional orientation of the characteristic topography in step S5 into the crystallographic coordinate system acquired by EBSD, to obtain the crystallographic orientation of the characteristic topography. 
 
     
     
       2. The method for accurately characterizing a crystal three-dimensional orientation and a crystallographic orientation according to  claim 1 , wherein the two-dimensional structure topography is obtained by observing through FIB/SEM dual-beam system, or by observing through an optical microscope after mechanical polishing. 
     
     
       3. The method for accurately characterizing a crystal three-dimensional orientation and a crystallographic orientation according to  claim 1 , wherein the EBSD pattern is obtained by analyzing EBSD data of at least one plane in an area, and the EBSD data is collected based on an EBSD probe. 
     
     
       4. The method for accurately characterizing a crystal three-dimensional orientation and a crystallographic orientation according to  claim 1 , wherein the characteristic topography can determine the three-dimensional orientation of a characteristic plane through a slicing function in the three-dimensional image analysis software; and for a characteristic line or rod, obtaining the three-dimensional orientation of the characteristic line or rod by extracting normal directions of the two planes passing through the line or rod and carrying out a multiplication cross of the normal directions.