Photoresist layers of semiconductor components including electric fields, system, and methods of forming same

Abstract

Photoresist layers of semiconductor components including electric fields. The photoresist layer may include a body including a first portion disposed directly over a conductive layer of the semiconductor component. The body may also include a second portion integrally formed with and positioned over the first portion. The second portion may include a surface formed opposite the first portion. Additionally, the second portion may include a plurality of charged-particles implanted therein, where the plurality of charged-particles generating an electric field may extend through the first portion and the second portion of the body.

What is claimed is: 
     
       1. A system, comprising:
 a chamber including a cavity receiving a semiconductor component, the semiconductor component including an exposed photoresist layer; and 
 a charged-particle implantation device positioned within the chamber, adjacent the semiconductor component, the charged-particle implantation device emitting charged-particles at a predetermined charge energy toward the semiconductor component to be implanted within the photoresist layer of the semiconductor component, 
 wherein the predetermined charge energy of the emitted, charged particles is based on a predetermined, dielectric-breakdown range for the photoresist layer, 
 wherein the implanted charged-particles generate an electric field within the photoresist layer of the semiconductor component, and 
 wherein the generated, electric field within the photoresist layer of the semiconductor component is less than the predetermined, dielectric-breakdown range for the photoresist layer. 
 
     
     
       2. The system of  claim 1 , wherein the charged-particle implantation device includes an electron gun, an ion implanter, or an ionizing electromagnetic radiation device. 
     
     
       3. The system of  claim 1 , wherein the charged-particles emitted by the charged-particle implantation device include at least one of: charged ions, electrons, protons, or photons. 
     
     
       4. The system of  claim 1 , further comprising:
 a light source positioned within the chamber, adjacent the semiconductor component, the light source exposing at least a portion of the photoresist layer of the semiconductor component to an ultraviolet light to chemically alter a material composition of the photoresist layer, wherein the photoresist layer is exposed to the ultraviolet light subsequent to the generation of the electric field within the photoresist layer. 
 
     
     
       5. The system of  claim 1 , wherein the charged-particles emitted at the predetermined charge energy are implanted into a surface of the photoresist layer at a desired depth. 
     
     
       6. A photoresist layer of a semiconductor component, the photoresist layer comprising:
 a body including:
 a first portion disposed directly over a conductive layer of the semiconductor component; and 
 a second portion integrally formed with and positioned over the first portion, the second portion including a surface formed opposite the first portion, 
 wherein the second portion includes a plurality of charged-particles implanted therein, the plurality of charged-particles generating an electric field extending through the first portion and the second portion of the body, 
 wherein the plurality of charged-particles implanted in the second portion include a predetermined charge energy, the predetermined charge energy based on a predetermined, dielectric-breakdown range for a material forming the body, and 
 wherein the generated, electric field within the first portion and the second portion of the body is less than the predetermined, dielectric-breakdown range for the material forming the body. 
 
 
     
     
       7. The photoresist layer of  claim 6 , wherein the plurality of charged-particles implanted in the second portion include at least one of: charged ions, electrons, protons, or photons. 
     
     
       8. The photoresist layer of  claim 6 , wherein the first portion of the body includes a first height, and the second portion of the body includes a second height, the second height of the second portion is smaller than the first height of the first portion. 
     
     
       9. The photoresist layer of  claim 8 , wherein the second height of the second portion is between approximately two (2) nanometers (nm) and approximately 10 nm.