Method for manufacturing panel using a glass substrate as the laser light transmitting member and laser processing apparatus

Abstract

Quality of a crystalline film is improved. In a method for manufacturing a panel, a polysilicon film is formed by emission of laser light to an amorphous silicon film 3 A through a light-transmittable member 4 that can transmit the laser light.

The invention claimed is: 
     
       1. A method for manufacturing a panel comprising the steps of:
 (a) mounting a member configured to be able to transmit laser light on a substrate having a non-crystalline semiconductor film foiled on its upper surface; 
 (b) forming a polycrystalline semiconductor film by emission of the laser light to the non-crystalline semiconductor film through the member; and 
 (c) after the step (b), removing the member from the substrate, 
 wherein the member is composed of an untreated mother glass substrate of same size as the substrate, and 
 wherein the member is not a component of the panel. 
 
     
     
       2. The method for manufacturing the panel according to  claim 1 ,
 wherein the member is arranged so as to entirely cover the upper surface of the substrate. 
 
     
     
       3. The method for manufacturing the panel according to  claim 1 ,
 wherein the member and the substrate are fixed to each other by static electricity. 
 
     
     
       4. The method for manufacturing the panel according to  claim 1 ,
 wherein the substrate is arranged on a movable stage. 
 
     
     
       5. The method for manufacturing the panel according to  claim 1 ,
 wherein the substrate is carried while being floated above a fixed stage. 
 
     
     
       6. The method for manufacturing the panel according to  claim 1 ,
 wherein a gap is foamed between the substrate and the member, and 
 the gap is filled with inert gas. 
 
     
     
       7. The method for manufacturing the panel according to  claim 6 ,
 wherein the gap is larger than a thickness of the non-crystalline semiconductor film. 
 
     
     
       8. The method for manufacturing the panel according to  claim 6 ,
 wherein the inert gas is nitrogen gas. 
 
     
     
       9. The method for manufacturing the panel according to  claim 6 ,
 wherein an electrostatically-charging process is performed to the inert gas. 
 
     
     
       10. The method for manufacturing the panel according to  claim 1 ,
 wherein the non-crystalline semiconductor film is an amorphous silicon film, and 
 the polycrystalline semiconductor film is a polysilicon film. 
 
     
     
       11. The method for manufacturing the panel according to  claim 1 ,
 wherein the step (b) is performed plural times. 
 
     
     
       12. The method for manufacturing the panel according to  claim 1 ,
 wherein the panel includes a plurality of pixel regions, 
 a thin film transistor is foamed in each of the plurality of pixel regions, and 
 the polycrystalline semiconductor film is a channel film of the thin film transistor. 
 
     
     
       13. The method for manufacturing the panel according to  claim 12 ,
 wherein the panel is a display panel for use in a television. 
 
     
     
       14. The method for manufacturing the panel according to  claim 12 ,
 wherein the panel is a display panel for use in a mobile communication device. 
 
     
     
       15. A method for manufacturing a panel comprising the steps of:
 (a) forming a plurality of protrusions on a substrate having a non-crystalline semiconductor film foamed on its upper surface; 
 (b) mounting a member configured to be able to transmit laser light above the substrate having the non-crystalline semiconductor film so that the member is supported by the plurality of protrusions under atmosphere of inert gas; 
 (c) forming a polycrystalline semiconductor film by emission of the laser light to the non-crystalline semiconductor film through the member; and 
 (d) after the step (c), removing the member from the substrate, 
 wherein the member is composed of an untreated mother glass substrate of same size as the substrate, and 
 wherein the member is not a component of the panel. 
 
     
     
       16. A laser processing apparatus for manufacturing a panel, comprising:
 a laser oscillator configured to emit laser light; 
 a carrying stage configured to carry a substrate to which the laser light is emitted; 
 a measuring device arranged above the carrying stage; and 
 a controller configured to be able to control energy of the laser light on the basis of a value that is output from the measuring device, 
 wherein a member configured to be able to transmit the laser light is mounted on an upper surface of the substrate, and 
 the measuring device measures energy of reflection light generated when the laser light is reflected by the member, 
 wherein the member is composed of an untreated mother glass substrate of same size as the substrate, and 
 wherein the member is not a component of the panel. 
 
     
     
       17. A laser processing apparatus for manufacturing a panel, comprising:
 a laser oscillator configured to emit laser light; 
 a carrying stage configured to carry a substrate to which the laser light is emitted; and 
 a reflection mirror arranged above the carrying stage, 
 wherein a member configured to be able to transmit the laser light is mounted on an upper surface of the substrate, 
 the reflection mirror reflects the laser light that is reflected by the member, to the substrate, and 
 the substrate is able to be preheated by the laser light that is reflected by the reflection mirror, 
 wherein the member is composed of an untreated mother glass substrate of same size as the substrate, and 
 wherein the member is not a component of the panel. 
 
     
     
       18. The laser processing apparatus according to  claim 16 ,
 wherein a non-crystalline semiconductor film is formed on an upper surface of the substrate, and 
 the non-crystalline semiconductor film is modified into a polycrystalline semiconductor film by emission of the laser light. 
 
     
     
       19. The laser processing apparatus according to  claim 16 ,
 wherein the member is arranged so as to entirely cover the upper surface of the substrate. 
 
     
     
       20. The laser processing apparatus according to  claim 16 ,
 wherein the member and the substrate are fixed to each other by static electricity. 
 
     
     
       21. The laser processing apparatus according to  claim 16 ,
 wherein a gap is formed between the substrate and the member, and 
 the gap is filled with inert gas. 
 
     
     
       22. The laser processing apparatus according to  claim 16 ,
 wherein the carrying stage is movable, and 
 the substrate is fixed onto the carrying stage. 
 
     
     
       23. The laser processing apparatus according to  claim 16 ,
 wherein the carrying stage is able to carry the substrate while floating the substrate. 
 
     
     
       24. A laser processing apparatus for manufacturing a panel, comprising:
 a laser oscillator configured to emit laser light; 
 a carrying stage configured to carry a substrate to which the laser light is emitted; and 
 a suction portion arranged above the substrate and configured to be displaceable in up and down directions, 
 wherein a member configured to be able to transmit the laser light is mounted on a portion between the substrate and the suction portion, and 
 the suction portion is able to suck the member, 
 wherein the member is composed of an untreated mother glass substrate of same size as the substrate, and 
 wherein the member is not a component of the panel. 
 
     
     
       25. The laser processing apparatus according to  claim 17 ,
 wherein a non-crystalline semiconductor film is formed on an upper surface of the substrate, and 
 the non-crystalline semiconductor film is modified into a polycrystalline semiconductor film by emission of the laser light. 
 
     
     
       26. The laser processing apparatus according to  claim 17 ,
 wherein the member is arranged so as to entirely cover the upper surface of the substrate. 
 
     
     
       27. The laser processing apparatus according to  claim 17 ,
 wherein the member and the substrate are fixed to each other by static electricity. 
 
     
     
       28. The laser processing apparatus according to  claim 17 ,
 wherein a gap is formed between the substrate and the member, and 
 the gap is filled with inert gas. 
 
     
     
       29. The laser processing apparatus according to  claim 17 ,
 wherein the carrying stage is movable, and 
 the substrate is fixed onto the carrying stage. 
 
     
     
       30. The laser processing apparatus according to  claim 17 ,
 wherein the carrying stage is able to carry the substrate while floating the substrate.