Methods of forming cutting elements

Abstract

A cutting element comprises a supporting substrate, and a cutting table attached to an end of the supporting substrate. The cutting table comprises inter-bonded diamond particles, and a thermally stable material within interstitial spaces between the inter-bonded diamond particles. The thermally stable material comprises a carbide precipitate having the general chemical formula, A3XZn-1, where A comprises one or more of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U; X comprises one or more of Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P; Z comprises C; and n is greater than or equal to 0 and less than or equal to 0.75. A method of forming a cutting element, an earth-boring tool, a supporting substrate, and a method of forming a supporting substrate are also described.

What is claimed is: 
     
       1. A method of forming a cutting element, comprising:
 providing a diamond-containing material comprising discrete diamond particles over a substrate; 
 sintering the diamond-containing material in the presence of a liquid phase of a homogenized alloy comprising at least one first element selected from Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U, and at least one second element selected from Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P to inter-bond the discrete diamond particles; and 
 converting portions of the homogenized alloy within interstitial spaces between the inter-bonded diamond particles into a thermally stable material comprising: one or more carbide precipitates having the general chemical formula:
   A 3 XZ 1-n , 
 where A comprises the at least one first element; 
 X comprises the at least one second element; 
 Z comprises C; and 
 n is greater than or equal to 0 and less than or equal to 0.75; and 
 
 one or more of an FCC L1 2  phase precipitate, an FCC DO 22  phase precipitate, a D8 5  phase precipitate, a DO 19  phase precipitate, a BCC/B2 phase precipitate, and an FCC L1 0  phase precipitate. 
 
     
     
       2. The method of  claim 1 , further comprising formulating the homogenized alloy to have an amount of the at least one second element capable of substantially suppressing reactions between the at least one first element and C that would otherwise form a binary carbide when the discrete diamond particles of the diamond-containing material are exposed to the liquid phase of the homogenized alloy. 
     
     
       3. A method of forming a cutting element, comprising:
 providing a diamond-containing material comprising discrete diamond particles over a substrate; 
 sintering the diamond-containing material in the presence of a liquid phase of a homogenized alloy comprising at least one first element selected from Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U, and at least one second element selected from Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P to inter-bond the discrete diamond particles; and 
 converting portions of the homogenized alloy within interstitial spaces between the inter-bonded diamond particles into a thermally stable material substantially free of Co, the thermally stable material comprising one or more carbide precipitates having the general chemical formula:
   A 3 XZ 1-n , 
 
 where A comprises the at least one first element; 
 X comprises the at least one second element; 
 Z comprises C; and 
 n is greater than or equal to 0 and less than or equal to 0.75. 
 
     
     
       4. The method of  claim 1 , wherein:
 providing the diamond-containing material over the substrate comprises providing the diamond-containing material directly on a supporting substrate comprising a homogenized binder comprising C, W, the at least one first element, and the at least one second element, and WC particles dispersed within the homogenized binder; and 
 sintering the diamond-containing material in the presence of the liquid phase of the homogenized alloy comprises subjecting the supporting substrate and the diamond-containing material to elevated temperatures and elevated pressures to melt and diffuse a portion of the homogenized binder of the supporting substrate into the diamond-containing material and catalyze the formation of the inter-bonded diamond particles. 
 
     
     
       5. The method of  claim 4 , further comprising selecting the homogenized binder of the supporting substrate to have a melting temperature greater than or equal to about 750° C. 
     
     
       6. The method of  claim 4 , further comprising forming the diamond-containing material to comprise the discrete diamond particles and discrete alloy particles individually comprising the at least one first element and the at least one second element, and wherein sintering the diamond-containing material in the presence of the liquid phase of the homogenized alloy comprises subjecting the diamond-containing material to elevated temperatures and elevated pressures to melt the discrete alloy particles and catalyze the formation of the inter-bonded diamond particles. 
     
     
       7. The method of  claim 6 , further comprising selecting the discrete alloy particles to individually comprise a homogenized alloy selected from Sm 3 Sn, Sm 3 Bi, Sm 3 Te, Sm 3 P, Sm 3 Si, Sm 3 Ga, Sc 3 Sn, Sc 3 Ge, Sc 3 Sb, Sc 3 As, Sm 3 Be, Sc 3 P, Sc 3 Si, Y 3 Sn, Sc 3 Bi, Tm 3 Sn, Er 3 Sn, Sc 3 Te, Y 3 Sb, Sc 3 Se, Ho 3 Sn, Sc 3 Ga, Dy 3 Sn, Y 3 Bi, Tb 3 Sn, Tm 3 Sb, Er 3 Sb, Lu 3 Sb, Lu 3 Ge, Ti 3 Ga, Ti 3 Ge, Gd 3 Sn, Tb 3 Sb, Y 3 Ge, Er 3 Bi, Ho 3 Bi, Tm 3 Bi, Lu 3 As, Tm 3 Ge, Dy 3 Bi, Lu 3 Bi, Tm 3 As, Tb 3 Bi, Ti 3 Sn, Er 3 As, Ti 3 Si, Y 3 Te, Gd 3 Bi, Ce 3 Te, Ti 3 Al, Zr 3 Sn, Dy 3 As, La 3 Bi, Sc 3 Al, Yb 3 Se, Tb 3 As, Lu 3 P, Yb 3 Te, Lu 3 Sn, Eu 3 Se, Er 3 Te, Ti 3 Sb, Lu 3 Si, Tm 3 Te, Tm 3 P, Gd 3 Te, Gd 3 As, Zr 3 Sb, Lu 3 Ga, Er 3 P, Sm 3 B, Lu 3 Te, Ho 3 P, Tm 3 Si, Er 3 Si, Dy 3 P, Tm 3 Ga, Ce 3 As, Y 3 Ga, Ho 3 Si, Tb 3 P, Er 3 Ga, Dy 3 Si, Eu 3 Bi, Hf 3 Ga, Ho 3 Ga, Gd 3 P, Gd 3 Se, Lu 3 Al, Ce 3 Sn, Tb 3 Si, Hf 3 Sn, Dy 3 Ga, Tm 3 Al, Gd 3 Si, Ti 3 Bi, Tb 3 Ga, Er 3 Al, Yb 3 Bi, Yb 3 Sb, La 3 P, Eu 3 As, Fe 3 Al, Ho 3 Al, Gd 3 Ga, Yb 3 As, Th 3 Bi, Ac 3 Sb, Th 3 Sn, Tb 3 Al, Eu 3 P, Fe 3 Si, Ti 3 Be, Yb 3 P, Gd 3 Al, Hf 3 P, V 3 Si, Ce 3 Si, V 3 Ge, Fe 3 Ga, Rh 3 Al, Th 3 Ge, V 3 Al, Fe 3 Ge, V 3 Ga, Th 3 P, V 3 P, V 3 Sn, Fe 3 Sn, Zr 3 Be, Hf 3 Be, Nb 3 Ga, Sc 3 Be, Th 3 Al, V 3 Sb, Ce 3 Al, Co 3 Al, V 3 As, Ni 3 Al, Co 3 Ga, Ti 3 B, Rh 3 Ga, Fe 3 Be, Fe 3 Sb, Sc 3 B, U 3 P, Fe 3 P, Co 3 Si, Hf 3 Bi, V 3 Be, V 3 Te, Ni 3 Ga, Lu 3 Be, Mn 3 Al, Ru 3 Al, Fe 3 As, Ta 3 Sn, Mn 3 Si, V 3 Se, U 3 Se, Co 3 Sn, Co 3 Be, Co 3 Ge, U 3 Si, Cr 3 Si, V 3 Bi, Tc 3 Al, La 3 Si, Rh 3 Sn, Cr 3 Al, U 3 As, Mn 3 Ga, Th 3 Si, Rh 3 Be, Ni 3 Be, Mn 3 Ge, Cr 3 Ge, Pd 3 Al, and Cr 3 Ga. 
     
     
       8. The method of  claim 2 , further comprising providing an alloy material comprising a substantially homogeneous alloy of the at least one first element and the at least one second element directly adjacent one or more outermost boundaries of the diamond-containing material, and wherein sintering the diamond-containing material in the presence of the liquid phase of the homogenized alloy comprises subjecting the diamond-containing material and the alloy material to elevated temperatures and elevated pressures to melt and diffuse a portion of the substantially homogeneous alloy of the alloy material into the diamond-containing material and catalyze the formation of the inter-bonded diamond particles. 
     
     
       9. The method of  claim 8 , further comprising selecting the substantially homogeneous alloy from Sm 3 Sn, Sm 3 Bi, Sm 3 Te, Sm 3 P, Sm 3 Si, Sm 3 Ga, Sc 3 Sn, Sc 3 Ge, Sc 3 Sb, Sc 3 As, Sm 3 Be, Sc 3 P, Sc 3 Si, Y 3 Sn, Sc 3 Bi, Tm 3 Sn, Er 3 Sn, Sc 3 Te, Y 3 Sb, Sc 3 Se, Ho 3 Sn, Sc 3 Ga, Dy 3 Sn, Y 3 Bi, Tb 3 Sn, Tm 3 Sb, Er 3 Sb, Lu 3 Sb, Lu 3 Ge, Ti 3 Ga, Ti 3 Ge, Gd 3 Sn, Tb 3 Sb, Y 3 Ge, Er 3 Bi, Ho 3 Bi, Tm 3 Bi, Lu 3 As, Tm 3 Ge, Dy 3 Bi, Lu 3 Bi, Tm 3 As, Tb 3 Bi, Ti 3 Sn, Er 3 As, Ti 3 Si, Y 3 Te, Gd 3 Bi, Ce 3 Te, Ti 3 Al, Zr 3 Sn, Dy 3 As, La 3 Bi, Sc 3 Al, Yb 3 Se, Tb 3 As, Lu 3 P, Yb 3 Te, Lu 3 Sn, Eu 3 Se, Er 3 Te, Ti 3 Sb, Lu 3 Si, Tm 3 Te, Tm 3 P, Gd 3 Te, Gd 3 As, Zr 3 Sb, Lu 3 Ga, Er 3 P, Sm 3 B, Lu 3 Te, Ho 3 P, Tm 3 Si, Er 3 Si, Dy 3 P, Tm 3 Ga, Ce 3 As, Y 3 Ga, Ho 3 Si, Tb 3 P, Er 3 Ga, Dy 3 Si, Eu 3 Bi, Hf 3 Ga, Ho 3 Ga, Gd 3 P, Gd 3 Se, Lu 3 Al, Ce 3 Sn, Tb 3 Si, Hf 3 Sn, Dy 3 Ga, Tm 3 Al, Gd 3 Si, Ti 3 Bi, Tb 3 Ga, Er 3 Al, Yb 3 Bi, Yb 3 Sb, La 3 P, Eu 3 As, Fe 3 Al, Ho 3 Al, Gd 3 Ga, Yb 3 As, Th 3 Bi, Ac 3 Sb, Th 3 Sn, Tb 3 Al, Eu 3 P, Fe 3 Si, Ti 3 Be, Yb 3 P, Gd 3 Al, Hf 3 P, V 3 Si, Ce 3 Si, V 3 Ge, Fe 3 Ga, Rh 3 Al, Th 3 Ge, V 3 Al, Fe 3 Ge, V 3 Ga, Th 3 P, V 3 P, V 3 Sn, Fe 3 Sn, Zr 3 Be, Hf 3 Be, Nb 3 Ga, Sc 3 Be, Th 3 Al, V 3 Sb, Ce 3 Al, Co 3 Al, V 3 As, Ni 3 Al, Co 3 Ga, Ti 3 B, Rh 3 Ga, Fe 3 Be, Fe 3 Sb, Sc 3 B, U 3 P, Fe 3 P, Co 3 Si, Hf 3 Bi, V 3 Be, V 3 Te, Ni 3 Ga, Lu 3 Be, Mn 3 Al, Ru 3 Al, Fe 3 As, Ta 3 Sn, Mn 3 Si, V 3 Se, U 3 Se, Co 3 Sn, Co 3 Be, Co 3 Ge, U 3 Si, Cr 3 Si, V 3 Bi, Tc 3 Al, La 3 Si, Rh 3 Sn, Cr 3 Al, U 3 As, Mn 3 Ga, Th 3 Si, Rh 3 Be, Ni 3 Be, Mn 3 Ge, Cr 3 Ge, Pd 3 Al, and Cr 3 Ga. 
     
     
       10. The method of  claim 8 , wherein providing the alloy material comprising the substantially homogeneous alloy of the at least one first element and the at least one second element directly adjacent one or more outermost boundaries of the diamond-containing material comprises providing the alloy material directly adjacent opposing outermost boundaries of the diamond-containing material and the substrate, such that at least a portion of the alloy material intervenes between the diamond-containing material and the substrate. 
     
     
       11. The method of  claim 8 , wherein providing the alloy material comprising the substantially homogeneous alloy of the at least one first element and the at least one second element directly adjacent one or more outermost boundaries of the diamond-containing material comprises providing the alloy material directly adjacent outermost boundaries of the diamond-containing material, such that the alloy material does not substantially intervene between the diamond-containing material and the substrate. 
     
     
       12. The method of  claim 2 , wherein converting portions of the homogenized alloy within interstitial spaces between the inter-bonded diamond particles into the thermally stable material comprises forming the thermally stable material to comprise one or more of Sm 3 SnC 1-n , Sm 3 BiC 1-n , Sm 3 TeC 1-n , Sm 3 PC 1-n , Sm 3 SiC 1-n , Sm 3 GaC 1-n , Sc 3 SnC 1-n , Sc 3 GeC 1-n , Sc 3 SbC 1-n , Sc 3 AsC 1-n , Sm 3 BeC 1-n , Sc 3 PC 1-n , Sc 3 SiC 1-n , Y 3 SnC 1-n , Sc 3 BiC 1-n , Tm 3 SnC 1-n , Er 3 SnC 1-n , Sc 3 TeC 1-n , Y 3 SbC 1-n , Sc 3 SeC 1-n , Ho 3 SnC 1-n , Sc 3 GaC 1-n , Dy 3 SnC 1-n , Y 3 BiC 1-n , Tb 3 SnC 1-n , Tm 3 SbC 1-n , Er 3 SbC 1-n , Lu 3 SbC 1-n , Lu 3 GeC 1-n , Ti 3 GaC 1-n , Ti 3 GeC 1-n , Gd 3 SnC 1-n , Tb 3 SbC 1-n , Y 3 GeC 1-n , Er 3 BiC 1-n , Ho 3 BiC 1-n , Tm 3 BiC 1-n , Lu 3 AsC 1-n , Tm 3 GeC 1-n , Dy 3 BiC 1-n , Lu 3 BiC 1-n , Tm 3 AsC 1-n , Tb 3 BiC 1-n , Ti 3 SnC 1-n , Er 3 AsC 1-n , Ti 3 SiC 1-n , Y 3 TeC 1-n , Gd 3 BiC 1-n , Ce 3 TeC 1-n , Ti 3 AlC 1-n , Zr 3 SnC 1-n , Dy 3 AsC 1-n , La 3 BiC 1-n , Sc 3 AlC 1-n , Yb 3 SeC 1-n , Tb 3 AsC 1-n , Lu 3 PC 1-n , Yb 3 TeC 1-n , Lu 3 SnC 1-n , Eu 3 SeC 1-n , Er 3 TeC 1-n , Ti 3 SbC 1-n , Lu 3 SiC 1-n , Tm 3 TeC 1-n , Tm 3 PC 1-n , Gd 3 TeC 1-n , Gd 3 AsC 1-n , Zr 3 SbC 1-n , Lu 3 GaC 1-n , Er 3 PC 1-n , Sm 3 BC 1-n , Lu 3 TeC 1-n , Ho 3 PC 1-n , Tm 3 SiC 1-n , Er 3 SiC 1-n , Dy 3 PC 1-n , Tm 3 GaC 1-n , Ce 3 AsC 1-n , Y 3 GaC 1-n , Ho 3 SiC 1-n , Tb 3 PC 1-n , Er 3 GaC 1-n , Dy 3 SiC 1-n , Eu 3 BiC 1-n , Hf 3 GaC 1-n , Ho 3 GaC 1-n , Gd 3 PC 1-n , Gd 3 SeC 1-n , Lu 3 AlC 1-n , Ce 3 SnC 1-n , Tb 3 SiC 1-n , Hf 3 SnC 1-n , Dy 3 GaC 1-n , Tm 3 AlC 1-n , Gd 3 SiC 1-n , Ti 3 BiC 1-n , Tb 3 GaC 1-n , Er 3 AlC 1-n , Yb 3 BiC 1-n , Yb 3 SbC 1-n , La 3 PC 1-n , Eu 3 AsC 1-n , Fe 3 AlC 1-n , Ho 3 AlC 1-n , Gd 3 GaC 1-n , Yb 3 AsC 1-n , Th 3 BiC 1-n , AC 3 SbC 1-n , Th 3 SnC 1-n , Tb 3 AlC 1-n , Eu 3 PC 1-n , Fe 3 SiC 1-n , Ti 3 BeC 1-n , Yb 3 PC 1-n , Gd 3 AlC 1-n , Hf 3 PC 1-n , V 3 SiC 1-n , Ce 3 SiC 1-n , V 3 GeC 1-n , Fe 3 GaC 1-n , Rh 3 AlC 1-n , Th 3 GeC 1-n , V 3 AlC 1-n , Fe 3 GeC 1-n , V 3 GaC 1-n , Th 3 PC 1-n , V 3 PC 1-n , V 3 SnC 1-n , Fe 3 SnC 1-n , Zr 3 BeC 1-n , Hf 3 BeC 1-n , Nb 3 GaC 1-n , SC 3 BeC 1-n , Th 3 AlC 1-n , V 3 SbC 1-n , Ce 3 AlC 1-n , Co 3 AlC 1-n , V 3 AsC 1-n , Ni 3 AlC 1-n , Co 3 GaC 1-n , Ti 3 BC 1-n , Rh 3 GaC 1-n , Fe 3 BeC 1-n , Fe 3 SbC 1-n , SC 3 BC 1-n , U 3 PC 1-n , Fe 3 PC 1-n , Co 3 SiC 1-n , Hf 3 BiC 1-n , V 3 BeC 1-n , V 3 TeC 1-n , Ni 3 GaC 1-n , Lu 3 BeC 1-n , Mn 3 AlC 1-n , Ru 3 AlC 1-n , Fe 3 AsC 1-n , Ta 3 SnC 1-n , Mn 3 SiC 1-n , V 3 SeC 1-n , U 3 SeC 1-n , Co 3 SnC 1-n , Co 3 BeC 1-n , Co 3 GeC 1-n , U 3 SiC 1-n , Cr 3 SiC 1-n , V 3 BiC 1-n , Tc 3 AlC 1-n , La 3 SiC 1-n , Rh 3 SnC 1-n , Cr 3 AlC 1-n , U 3 AsC 1-n , Mn 3 GaC 1-n , Th 3 SiC 1-n , Rh 3 BeC 1-n , Ni 3 BeC 1-n , Mn 3 GeC 1-n , Cr 3 GeC 1-n , Pd 3 AlC 1-n , and Cr 3 GaC 1-n , wherein 0≤n≤0.75. 
     
     
       13. The method of  claim 2 , further comprising solution treating the thermally stable material to decompose the one or more carbide precipitates thereof into one or more FCC L1 2  phase precipitates. 
     
     
       14. A method of forming a cutting element, comprising:
 providing a diamond-containing material comprising discrete diamond particles over a substrate; 
 sintering the diamond-containing material in the presence of a liquid phase of a homogenized alloy to inter-bond the discrete diamond particles, the homogenized alloy comprising:
 one first element selected from Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U; and 
 two second elements selected from Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P; and 
 
 converting portions of the homogenized alloy within interstitial spaces between the inter-bonded diamond particles into a thermally stable material comprising a quaternary κ-carbide having the general chemical formula:
   A 3 XZ 1-n , 
 where A comprises the one first element; 
 X comprises the two second elements; 
 Z comprises C; and 
 n is greater than or equal to 0 and less than or equal to 0.75. 
 
 
     
     
       15. The method of  claim 14 , wherein providing the diamond-containing material over the substrate comprises providing the diamond-containing material directly on a supporting substrate, the supporting substrate comprising:
 a homogenized binder comprising C, W, the one first element, and the two second elements; and 
 WC particles dispersed within the homogenized binder. 
 
     
     
       16. The method of  claim 15 , further comprising selecting the homogenized binder of the supporting substrate to have a melting temperature within a range of from about 1000° C. to about 1500° C. 
     
     
       17. The method of  claim 16 , wherein sintering the diamond-containing material in the presence of the liquid phase of the homogenized alloy comprises subjecting the supporting substrate and the diamond-containing material to elevated temperatures and elevated pressures to melt and diffuse a portion of the homogenized binder of the supporting substrate into the diamond-containing material and catalyze the formation of the inter-bonded diamond particles. 
     
     
       18. The method of  claim 14 , further comprising forming the diamond-containing material to comprise the discrete diamond particles and discrete alloy particles individually comprising the one first element and the two second elements, and wherein sintering the diamond-containing material comprises subjecting the diamond-containing material to elevated temperatures and elevated pressures to melt the discrete alloy particles to form the liquid phase of the homogenized alloy and catalyze the formation of the inter-bonded diamond particles.