US11897077B2ActiveUtilityA1
Semiconductor manufacturing apparatus
Est. expiryMar 10, 2040(~13.7 yrs left)· nominal 20-yr term from priority
Inventors:Tsutomu Miki
H10P 95/064H10P 74/238H10P 70/277B24B 37/005H01L 21/02074H01L 21/31055H01L 22/26
48
PatentIndex Score
0
Cited by
14
References
18
Claims
Abstract
A semiconductor manufacturing apparatus includes a first top ring that is rotatable and configured to hold a wafer, a first turntable that is rotatable and has a polishing pad for performing polishing of a film formed on the wafer, a sound measuring unit (sensor) that measures a first sound generated during the polishing, and a first calculation unit (controller) that calculates a polishing amount of the film based on a first sound pressure of the first sound, a polishing amount per unit time of the polishing, and a time of the polishing.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. A semiconductor manufacturing apparatus comprising:
a rotatable first top ring configured to hold a wafer having a film;
a rotatable first turntable having a polishing pad arranged to perform polishing of the film;
a sound sensor configured to measure a first sound generated during the polishing; and
a controller configured to calculate a polishing amount of the film based on (i) a first sound pressure of the first sound, (ii) a polishing amount per unit time of the polishing, and (iii) an elapsed time of the polishing, wherein a prediction value of the polishing amount is determined based on the first sound pressure during polishing, a second sound pressure before polishing, and the polishing amount per unit time according to Equation (2),
Prediction
value
of
polishing
amount
=
∑
t
=
1
n
(
∫
f
1
f
2
(
Sound
pressure
during
polishing
-
Sound
pressure
before
polishing
)
×
Polishing
amount
per
unit
time
)
(
2
)
2. The semiconductor manufacturing apparatus according to claim 1 ,
wherein the polishing amount per unit time is predetermined for a plurality of materials to be polished.
3. The semiconductor manufacturing apparatus according to claim 1 , further comprising:
a first memory that stores the polishing amount per unit time.
4. The semiconductor manufacturing apparatus according to claim 1 , wherein the controller is configured to control the polishing based on the polishing amount of the film and a target polishing amount.
5. The semiconductor manufacturing apparatus according to claim 4 ,
wherein the target polishing amount is predetermined for a plurality of materials to be polished.
6. The semiconductor manufacturing apparatus according to claim 4 , further comprising:
a second memory that stores the target polishing amount.
7. The semiconductor manufacturing apparatus according to claim 1 , wherein the controller is configured to calculate the first sound pressure of the first sound.
8. The semiconductor manufacturing apparatus according to claim 1 ,
wherein the controller is configured to
provide a regression model for predicting the first sound pressure,
calculate a first sound prediction value using the regression model, and
calculate the polishing amount of the film based on the first sound pressure prediction value.
9. The semiconductor manufacturing apparatus according to claim 8 ,
wherein the controller is further configured to:
calculate a correction coefficient based on the regression model, and
calculate the first sound pressure prediction value based on the first sound pressure and the correction coefficient.
10. The semiconductor manufacturing apparatus according to claim 1 ,
wherein the second sound pressure includes a third sound pressure of a third sound generated from the first top ring and a fourth sound pressure of a fourth sound generated from the first turntable.
11. The semiconductor manufacturing apparatus according to claim 1 ,
wherein the controller is configured to calculate the polishing amount of the film by using a fifth sound pressure which is a difference between the first sound pressure and the second sound pressure.
12. The semiconductor manufacturing apparatus according to claim 1 ,
wherein the sound sensor is configured to measure a sixth sound falling within a frequency bandwidth of 20 kHz or higher and 100 kHz or lower.
13. The semiconductor manufacturing apparatus according to claim 12 ,
wherein the sound sensor is configured to measure a seventh sound falling within a frequency bandwidth of 20 kHz or higher and 70 kHz or lower.
14. The semiconductor manufacturing apparatus according to claim 13 ,
wherein the sound sensor is configured to measure an eighth sound falling within a frequency bandwidth of 20 kHz or higher and 50 kHz or lower.
15. The semiconductor manufacturing apparatus according to claim 12 ,
wherein the sound sensor is configured to measure a ninth sound falling within a frequency bandwidth of 20 kHz or higher and 100 kHz or lower and a tenth sound falling within a frequency bandwidth of 10 Hz or higher and less than 20 kHz, and
the controller is configured to control the polishing based on a second polishing amount of the film calculated based on a ninth sound pressure of the ninth sound, and a third polishing amount of the film calculated based on a tenth sound pressure of the tenth sound.
16. The semiconductor manufacturing apparatus according to claim 1 , further comprising:
a second rotatable top ring; and
a second rotatable turntable,
wherein the second sound pressure further includes an eleventh sound pressure of an eleventh sound generated from the second top ring and a twelfth sound pressure of a twelfth sound generated from the second turntable.
17. The semiconductor manufacturing apparatus according to claim 1 , further comprising:
a robotic hand configured to move the wafer to the first top ring; and
a cleaner configured to clean the wafer,
wherein the second sound pressure further includes a thirteenth sound pressure of a thirteenth sound generated from the robotic hand and a fourteenth sound pressure of a fourteenth sound generated from the cleaner.
18. The semiconductor manufacturing apparatus according to claim 1 , further comprising:
a robotic hand configured to move the wafer to the first top ring; and
a cleaner configured to clean the wafer.Cited by (0)
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