Backside metal patterning die singulation systems and related methods

Abstract

Implementations of die singulation systems and related methods may include forming a plurality of die on a first side of a substrate, forming a seed layer on a second side of a substrate opposite the first side of the substrate, using a shadow mask, applying a mask layer over the seed layer, forming a backside metal layer over the seed layer, removing the mask layer, and singulating the plurality of die included in the substrate through removing substrate material in the die street and through removing seed layer material in the die street.

What is claimed is: 
     
       1. A method of singulating a plurality of die comprised in a substrate, the method comprising:
 forming a plurality of die on a first side of a substrate; 
 using a shadow mask, applying a mask layer over a second side of the substrate; 
 forming a backside metal layer over the second side of the substrate; 
 removing the mask layer; 
 flipping the substrate; and 
 singulating the plurality of die comprised in the substrate through removing substrate material in a die street from the first side of the substrate. 
 
     
     
       2. The method of  claim 1 , wherein the mask layer comprises a polymer material. 
     
     
       3. The method of  claim 1 , wherein the mask layer comprises a photoresist material. 
     
     
       4. The method of  claim 1 , wherein the backside metal layer comprises copper. 
     
     
       5. The method of  claim 1 , wherein removing substrate material in the die street further comprises plasma etching. 
     
     
       6. The method of  claim 1 , further comprising forming a seed layer over the second side of the substrate. 
     
     
       7. The method of  claim 1 , further comprising thinning the second side of the substrate to a thickness less than 30 micrometers. 
     
     
       8. The method of  claim 1 , further comprising aligning the substrate from a backside of the substrate. 
     
     
       9. A method of singulating a plurality of die comprised in a substrate, the method comprising:
 forming a plurality of die on a first side of a substrate; 
 forming a seed layer over a second side of the substrate; 
 using a shadow mask, applying a mask layer over the second side of the substrate; 
 forming a backside metal layer over the second side of the substrate; 
 removing the mask layer; 
 flipping the substrate; 
 removing substrate material in a die street; and 
 removing seed layer material in the die street after removing the substrate material. 
 
     
     
       10. The method of  claim 9 , wherein the mask layer comprises a photoresist material. 
     
     
       11. The method of  claim 9 , wherein removing substrate material in the die street comprises plasma etching the substrate. 
     
     
       12. The method of  claim 9 , further comprising thinning the second side of the substrate to a thickness less than 30 micrometers. 
     
     
       13. The method of  claim 9 , further comprising aligning the substrate from a backside of the substrate. 
     
     
       14. A method of singulating a plurality of die comprised in a substrate, the method comprising:
 forming a plurality of die on a first side of a substrate; 
 forming a seed layer over a second side of the substrate; 
 using a shadow mask, applying a mask layer over the second side of the substrate; 
 forming a backside metal layer over the second side of the substrate; 
 removing the mask layer; 
 flipping the substrate; 
 etching the substrate from the first side of the substrate in a die street; and 
 singulating the plurality of die through jet ablating the seed layer in the die street after etching the substrate. 
 
     
     
       15. The method of  claim 14 , wherein the mask layer comprises a photoresist material. 
     
     
       16. The method of  claim 14 , further comprising thinning the substrate. 
     
     
       17. The method of  claim 14 , wherein the backside metal layer is 10 micrometers thick. 
     
     
       18. The method of  claim 14 , wherein the mask layer comprises a resin.