Non-volatile resistive random access memory and a manufacturing method

Abstract

The invention relates to a non-volatile resistive random access memory (ReRAM), a non-volatile ReRAM composition and to a method for manufacturing a non-volatile non-volatile ReRAM. The ReRAM includes a first electrode, a second electrode and a resistive switching/active layer which is located between the first and second electrodes. The switching layer contains chitosan and aluminium doped/incorporated zinc oxide. The switching/active layer may be configured to perform a switching operation according to an applied voltage. The switching/active layer may be in the form of a film. The switching/active layer may be coated/applied onto the first electrode and the second electrode may be placed/applied/provided over the switching/active layer such that the switching/active layer is located/wedged in-between the two electrodes.

The invention claimed is: 
     
       1. A non-volatile resistive random access memory (ReRAM) which includes:
 a first electrode; 
 a second electrode; and 
 a resistive switching/active layer which is located between the first and second electrodes, wherein the switching layer contains 
 chitosan, and 
 aluminium doped/incorporated zinc oxide. 
 
     
     
       2. The ReRAM of  claim 1 , wherein the switching/active layer is configured to perform a switching operation according to an applied voltage. 
     
     
       3. The ReRAM of  claim 1 , wherein the switching/active layer is in the form of a film. 
     
     
       4. The ReRAM of  claim 1 , wherein the switching/active layer is coated/applied onto the first electrode and the second electrode is placed/applied/provided over the switching/active layer such that the switching/active layer is located/wedged in-between the two electrodes. 
     
     
       5. The ReRAM of  claim 4 , wherein the first electrode is made, at least partially, from indium tin oxide. 
     
     
       6. The ReRAM of  claim 5 , wherein the ReRAM includes a glass substrate, and wherein the first electrode is coated/provided on the glass substrate. 
     
     
       7. The ReRAM of  claim 6 , wherein the first electrode is made from indium tin oxide which is coated/provided on the glass substrate. 
     
     
       8. The ReRAM of  claim 7 , wherein the second electrode is made, at least partially, from a metal. 
     
     
       9. A non-volatile resistive random access memory (ReRAM) switching layer composition which includes:
 chitosan, and 
 aluminium doped/incorporated Zinc Oxide. 
 
     
     
       10. A method for manufacturing a non-volatile resistive random access memory (ReRAM), wherein the method includes:
 providing a switching layer between a first electrode and a second electrode, wherein the switching layer contains chitosan and aluminium doped/incorporated zinc oxide. 
 
     
     
       11. The method of  claim 10  which includes coating the switching layer onto the first electrode. 
     
     
       12. The method of  claim 10  which includes coating the switching layer onto a substrate on which the first electrode is formed/provided. 
     
     
       13. The method of  claim 12 , wherein the coating step includes spin coating the switching layer onto the substrate. 
     
     
       14. The method of  claim 13 , wherein the first electrode is made, at least partially, from indium tin oxide. 
     
     
       15. The method of  claim 14 , wherein the second electrode is made, at least partially, from a metal. 
     
     
       16. The method of  claim 13 , wherein the substrate is a glass substrate. 
     
     
       17. The method of  claim 16  which includes preparing/making the switching layer by preparing a chitosan solution. 
     
     
       18. The method of  claim 17 , wherein the step of preparing/making the switching layer includes adding aluminium doped zinc oxide nanoparticles to the chitosan solution. 
     
     
       19. The method of  claim 18 , wherein the step of preparing/making the switching layer further includes spin coating a layer of the solution onto the substrate in order to form the switching layer over the first electrode which is provided on the substrate.