Temperature monitoring for memory devices
Abstract
Methods, systems, and devices for temperature monitoring for memory devices are described for monitoring one or more temperature ranges experienced by a memory device. The memory device may include monitoring circuitry or logic that may identify one or more durations of operating the memory device within the one or more temperature ranges. The memory device may store an indication of the one or more durations, or an indication of information associated with the one or more durations. The indication may be accessed a host device associated with the memory device or may be transmitted by the memory device to the host device. The host device may use information included in the indication to perform an operation associated with the memory device.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. A method, comprising:
receiving, at circuitry of a memory device, an output from a temperature sensor of the memory device;
determining, at the circuitry, whether the output corresponds to a first temperature range or a second temperature range;
signaling a first sensor or a second sensor of the memory device based at least in part on determining whether the output corresponds to the first temperature range or the second temperature range, respectively, the first sensor associated with the first temperature range and the second sensor associated with the second temperature range;
determining, based at least in part on signaling the first sensor or the second sensor, a first duration of operating the memory device within the first temperature range based at least in part on a first degradation level of the first sensor or a second duration of operating the memory device within the second temperature range based at least in part on a second degradation level of the second sensor;
storing, at a non-volatile storage component associated with the memory device, an indication of the first duration or an indication of the second duration, wherein storing the indication of the first duration or the indication of the second duration is based at least in part on determining whether the output corresponds to the first temperature range or the second temperature range; and
communicating, to a host device coupled with the memory device, an indication of operating the memory device within the first temperature range or the second temperature range based at least in part on storing the indication of the first duration or the indication of the second duration, wherein the indication of operating the memory device within the first temperature range or the second temperature range comprises the indication of the first duration or the indication of the second duration.
2. The method of claim 1 , further comprising:
writing the indication of the first duration or the indication of the second duration at a volatile storage component of the memory device before storing the indication of the first duration or the indication of the second duration at the non-volatile storage component.
3. The method of claim 2 , wherein the volatile storage component comprises a register of the memory device.
4. The method of claim 1 , wherein communicating the indication of operating the memory device within the first temperature range or the second temperature range comprises:
writing the indication of operating the memory device within the first temperature range or the second temperature range at a register of the memory device, the register configured to be accessed by the host device.
5. The method of claim 1 , wherein communicating the indication of operating the memory device within the first temperature range or the second temperature range comprises:
storing the indication of operating the memory device within the first temperature range or the second temperature range at the non-volatile storage component, the non-volatile storage component configured to be accessed by the host device.
6. The method of claim 1 , further comprising:
receiving a command indicating the first temperature range or the second temperature range, wherein the first duration or the second duration is determined based at least in part on the command.
7. The method of claim 1 , wherein the memory device comprises the non-volatile storage component.
8. The method of claim 1 , wherein the non-volatile storage component is coupled with the memory device.
9. The method of claim 1 , wherein communicating the indication of operating the memory device within the first temperature range or the second temperature range comprises:
communicating a status of the memory device, the status determined based at least in part on storing the indication of the first duration or the indication of the second duration.
10. An apparatus, comprising:
an array of memory cells configured to be coupled with a host device and configured to operate in response to a command from the host device;
a temperature sensor configured to output a temperature of the array to circuitry attached to a same substrate as the array;
the circuitry attached to the same substrate as the array and configured to determine a first duration of operating the array within a first temperature range or a second duration of operating the array within a second temperature range, wherein the circuitry is configured to determine whether the output temperature corresponds to the first temperature range or the second temperature range based at least in part on the output, and wherein the apparatus is configured to communicate, to the host device, an indication of operating the array within the first temperature range or the second temperature range, wherein the indication of operating the array within the first temperature range or the second temperature range comprises an indication of the first duration or an indication of the second duration;
a first sensor associated with the first temperature range;
a second sensor associated with the second temperature range, the first and second sensors each configured to receive signaling from the circuitry based at least in part on determining whether the output temperature corresponds to the first temperature range or the second temperature range;
second circuitry configured to determine the first duration based at least in part on a first degradation level of the first sensor or the second duration based at least in part on a second degradation level of the second sensor, the first degradation level or the second degradation level based at least in part on the signaling; and
a non-volatile storage component attached to the same substrate as the array and coupled with the circuitry, the non-volatile storage component configured to store the indication of the first duration or the indication of the second duration.
11. The apparatus of claim 10 , further comprising:
a volatile storage component attached to the same substrate as the array and coupled with the circuitry, the volatile storage component configured to store the indication of the first duration or the indication of the second duration.
12. The apparatus of claim 11 , wherein the volatile storage component comprises a register configured to be accessed by the host device to communicate the indication of operating the array within the first temperature range or the second temperature range.
13. The apparatus of claim 10 , wherein the non-volatile storage component is configured to be accessed by the host device to communicate the indication of operating the array within the first temperature range or the second temperature range, wherein the indication of operating the array within the first temperature range or the second temperature range comprises the indication of the first duration or the indication of the second duration.
14. A method, comprising:
initializing, by a host device, operation of a memory device;
receiving, from the memory device and based at least in part on the initializing, an indication of operating the memory device within a first temperature range for a first duration or a second temperature range for a second duration, wherein the indication comprises an indication of the first duration or an indication of the second duration, and wherein the first duration is based at least in part on a first degradation level of a first sensor of the memory device or the second duration is based at least in part on a second degradation level of a second sensor of the memory device; and
performing an operation based at least in part on receiving the indication.
15. The method of claim 14 , wherein performing the operation comprises:
determining a health status of the memory device based at least in part on the indication;
determining an amount of usage left for the memory device based at least in part on the indication;
communicating, with one or more other devices, information associated with the indication; or
any combination thereof.
16. The method of claim 14 , wherein receiving the indication comprises:
receiving an indication of a status of the memory device, the status based at least in part on operating the memory device within the first temperature range for the first duration or the second temperature range for the second duration.
17. The method of claim 14 , wherein receiving the indication comprises:
accessing the indication at a non-volatile storage component associated with the memory device.
18. The method of claim 14 , wherein receiving the indication comprises:
accessing the indication at a register of the memory device.
19. The apparatus of claim 10 , wherein, to communicate the indication of operating the array within the first temperature range or the second temperature range, the apparatus is configured to communicate a status of the array, the status based at least in part on the non-volatile storage component being operable to store the indication of the first duration or the indication of the second duration.
20. The method of claim 14 , wherein the indication of operating the memory device within the first temperature range or the second temperature range comprises a status of the memory device, the status based at least in part on the indication of the first duration or the indication of the second duration being stored at a non-volatile storage component associated with the memory device.Cited by (0)
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