Insulation unit based on array substrate and manufacturing method thereof, array substrate and manufacturing method thereof, and electronic device

Abstract

The present disclosure relates to an insulation unit based on an array substrate and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display mechanism. The method for manufacturing the insulation unit based on the array substrate includes: providing an aluminum layer on a substrate; and anodizing the aluminum layer to oxidize the aluminum layer to form the insulation unit. The method for manufacturing the insulation unit based on the array substrate can manufacture an insulation unit with a better corrosion resistance.

What is claimed is: 
     
       1. A method for manufacturing an insulation unit based on an array substrate, comprising:
 providing an aluminum layer on a substrate; 
 anodizing the aluminum layer in a first electrolyte to oxidize the aluminum layer to form a barrier layer; and 
 placing the aluminum layer with the barrier layer in a second electrolyte for anodization, to partially oxidize the barrier layer to form a porous layer; 
 wherein the porous layer and an unoxidized portion of the barrier layer form the insulation unit. 
 
     
     
       2. The method for manufacturing the insulation unit based on the array substrate according to  claim 1 , wherein the first electrolyte includes at least one of borate with a mass percentage of 1% to 8%, phosphate with a mass percentage of 3% to 20%, and tartaric acid with a mass percentage of 5% to 25%. 
     
     
       3. The method for manufacturing the insulation unit based on the array substrate according to  claim 1 , wherein the second electrolyte comprises at least one of H 2 SO 4  with a concentration of 0.2 mol/L to 0.6 mol/L, H 3 PO 4  with a concentration of 0.1 mol/L to 0.5 mol/L, and HOOCCOOH with a concentration of 0.2 mol/L to 0.8 mol/L. 
     
     
       4. The method for manufacturing the insulation unit based on the array substrate according to  claim 1 , wherein the anodizing the aluminum layer in the first electrolyte to oxidize the aluminum layer to form the barrier layer comprises: anodizing the aluminum layer in the first electrolyte under a first oxidation current to oxidize the aluminum layer to form the barrier layer, and a density of the first oxidation current is in a range of 0.01 mA/cm 2  to 0.1 mA/cm 2 . 
     
     
       5. The method for manufacturing the insulation unit based on the array substrate according to  claim 1 , further comprising: after anodizing the aluminum layer in the first electrolyte under a first oxidation current to oxidize the aluminum layer to form the barrier layer, anodizing the aluminum layer with the barrier layer under a second oxidation current to partially oxidize the barrier layer to form the porous layer, wherein a density of the second oxidation current is in a range of 0.4 mA/cm 2  to 2 mA/cm 2 . 
     
     
       6. The method for manufacturing the insulation unit based on the array substrate according to  claim 1 , wherein the insulation unit is a gate insulating layer, and the anodizing the aluminum layer in the first electrolyte to oxidize the aluminum layer to form the barrier layer comprises:
 forming a photoresist layer on a side of the aluminum layer away from the substrate; 
 exposing and then developing the photoresist layer; 
 etching the aluminum layer on which the developed photoresist layer is formed, to remove the photoresist layer to obtain the aluminum layer with a gate pattern; and 
 anodizing the aluminum layer with the gate pattern to oxidize a surface of the aluminum layer to form the insulation unit, wherein an unoxidized portion of the aluminum layer is a gate, and the insulation unit covers the gate. 
 
     
     
       7. The method for manufacturing the insulation unit based on the array substrate according to  claim 1 , wherein the providing the aluminum layer on the substrate comprises:
 forming a gate on the substrate, forming a gate insulating layer on a side of the substrate adjacent to the gate, the gate insulating layer covering the gate; 
 forming an active layer on a side of the gate insulating layer away from the substrate; 
 forming source and drain electrodes on a side of the active layer away from the gate insulating layer; and 
 forming the aluminum layer on a side of the substrate adjacent to the active layer, the aluminum layer covering the gate insulating layer, the active layer, and the source and drain electrodes. 
 
     
     
       8. An insulation unit based on an array substrate, manufactured by the method for manufacturing the insulation unit based on the array substrate according to  claim 1 . 
     
     
       9. A method for manufacturing an array substrate, comprising:
 providing an aluminum layer on a substrate; 
 anodizing the aluminum layer to oxidize a surface of the aluminum layer to form a gate insulating layer; 
 forming an active layer on a side of the gate insulating layer away from the substrate; 
 forming source and drain electrodes on a side of the active layer away from the gate insulating layer; 
 forming a metal layer on a side of the substrate adjacent to the active layer, the metal layer covering the gate insulating layer, the active layer, and the source and drain electrodes, a material of the metal layer being aluminum; and 
 anodizing the metal layer to oxidize the metal layer to form an insulating protective layer to obtain the array substrate; 
 wherein the anodizing the metal layer to oxidize the metal layer to form the insulating protective layer comprises: 
 anodizing the metal layer in a first electrolyte to oxidize the metal layer to form a barrier layer; and 
 anodizing the metal layer with the barrier layer in a second electrolyte to partially oxidize the barrier layer to form a porous layer; and 
 wherein an unoxidized portion of the aluminum layer is a gate, and the gate insulating layer covers the gate. 
 
     
     
       10. The method for manufacturing the array substrate according to  claim 9 , wherein the anodizing the aluminum layer comprises: anodizing the aluminum layer in an electrolyte; the electrolyte comprises at least one of borate with a mass percentage of 1% to 8%, phosphate with a mass percentage of 3% to 20%, and tartaric acid with a mass percentage of 5% to 25%. 
     
     
       11. The method for manufacturing the array substrate according to  claim 9 , wherein the anodizing the aluminum layer comprises:
 anodizing the aluminum layer under an oxidation current; a density of the oxidation current is in a range of 0.01 mA/cm 2  to 0.1 mA/cm 2 . 
 
     
     
       12. The method for manufacturing the array substrate according to  claim 9 , wherein the first electrolyte comprises at least one of borate with a mass percentage of 1% to 8%, phosphate with a mass percentage of 3% to 20% and tartaric acid with a mass percentage of 5% to 25%; and
 wherein the porous layer and an unoxidized portion of the barrier layer form the insulating protective layer, the second electrolyte comprises at least one of H 2 SO 4  with a concentration of 0.2 mol/L to 0.6 mol/L, H 3 PO 4  with a concentration of 0.1 mol/L to  0 . 5  mol/L, and HOOCCOOH with a concentration of 0.2 mol/L to 0.8 mol/L. 
 
     
     
       13. The method for manufacturing the array substrate according to  claim 9 , wherein the anodizing the metal layer to oxidize the metal layer to form the insulating protective layer comprises:
 anodizing the metal layer in the first electrolyte under a first oxidation current to oxidize the metal layer to form the barrier layer, a density of the first oxidation current being in a range of 0.01 mA/cm 2  to 0.1 mA/cm 2 ; and 
 anodizing the metal layer with the barrier layer in the second electrolyte under a second oxidation current to partially oxidize the barrier layer to form the porous layer, wherein the porous layer and an unoxidized portion of the barrier layer form the insulating protective layer, a density of the second oxidation current is in a range of 0.4 mA/cm 2  to 2 mA/cm 2 . 
 
     
     
       14. A method for manufacturing an array substrate, comprising:
 forming a gate on a substrate, forming a gate insulating layer on a side of the substrate adjacent to the gate, the gate insulating layer covering the gate; 
 forming an active layer on a side of the gate insulating layer away from the substrate; 
 forming source and drain electrodes on a side of the active layer away from the gate insulating layer; 
 forming a metal layer on a side of the substrate adjacent to the active layer, wherein the metal layer covers the gate insulating layer, the active layer, and the source and drain electrodes, a material of the metal layer is aluminum; and 
 anodizing the metal layer to oxidize the metal layer to form an insulating protective layer to obtain the array substrate; 
 wherein the anodizing the metal layer to oxidize the metal layer to form the insulating protective layer comprises: 
 anodizing the metal layer in a first electrolyte to oxidize the metal layer to form a barrier layer, and 
 anodizing the metal layer with the barrier layer in a second electrolyte, to partially oxidize the barrier layer to form a porous layer. 
 
     
     
       15. The method for manufacturing the array substrate according to  claim 14 , wherein the first electrolyte comprises at least one of borate with a mass percentage of 1% to 8%, phosphate with a mass percentage of 3% to 20% and tartaric acid with a mass percentage of 5% to 25%; and
 wherein the porous layer and an unoxidized portion of the barrier layer form the insulating protective layer, the second electrolyte comprises at least one of H 2 SO 4  with a concentration of 0.2 mol/L to 0.6 mol/L, H 3 PO 4  with a concentration of 0.1 mol/L to 0.5 mol/L, and HOOCCOOH with a concentration of 0.2 mol/L to 0.8 mol/L. 
 
     
     
       16. The method for manufacturing the array substrate according to  claim 14 , wherein the anodizing the metal layer to oxidize the metal layer to form the insulating protective layer comprises:
 anodizing the metal layer under a first oxidation current to oxidize the metal layer to form the barrier layer, wherein a density of the first oxidation current is less than a preset value, and the preset value is in a range of 0.1 mA/cm 2  to 0.4 mA/cm 2 ; and 
 anodizing the metal layer with the barrier layer under a second oxidation current to partially oxidize the barrier layer to form the porous layer, wherein the porous layer and an unoxidized portion of the barrier layer form the insulating protective layer, a density of the second oxidation current is greater than the preset value. 
 
     
     
       17. An array substrate, manufactured by the method for manufacturing the array substrate according to  claim 9 . 
     
     
       18. An electronic device, comprising the array substrate of  claim 17 .