Mask having a plating layer and method of manufacturing the same

Abstract

A mask and a method of manufacturing the same are disclosed. The method of manufacturing a mask includes forming a conductive layer on a pattern region and an auxiliary region around the pattern region of a substrate, placing the substrate including the conductive layer in a plating bath, forming a plating layer on the conductive layer, and separating the substrate and the conductive layer from the plating layer.

The invention claimed is: 
     
       1. A method of manufacturing a mask, comprising:
 forming a conductive layer on a pattern region and an auxiliary region adjacent to the pattern region of a substrate; 
 placing the substrate including the conductive layer in a plating bath; 
 forming a plating layer on the conductive layer; and 
 separating the substrate and the conductive layer from the plating layer, 
 wherein the pattern region includes a plurality of cell regions and the conductive layer has a first plurality of openings in each of the plurality of cell regions. 
 
     
     
       2. The method of manufacturing the mask of  claim 1 , wherein the conductive layer on the pattern region and the auxiliary region of the substrate is formed of a metal material. 
     
     
       3. The method of manufacturing the mask of  claim 1 , wherein forming the conductive layer on the pattern region and the auxiliary region of the substrate includes forming the conductive layer having different widths on the auxiliary region. 
     
     
       4. The method of manufacturing the mask of  claim 1 , wherein separating the substrate and the conductive layer from the plating layer includes:
 preparing an open mask by loading an open mask sheet onto a frame; 
 welding the open mask to the substrate; and 
 removing the substrate. 
 
     
     
       5. The method of manufacturing the mask of  claim 1 , wherein separating the substrate and the conductive layer from the plating layer includes:
 welding a frame to the substrate; and 
 removing the substrate. 
 
     
     
       6. The method of manufacturing the mask of  claim 1 , further comprising:
 welding the plating layer to a frame after separating the substrate and the conductive layer from the plating layer. 
 
     
     
       7. The method of manufacturing the mask of  claim 1 , further comprising:
 welding the plating layer to a frame before the separating the substrate and the conductive layer from the plating layer. 
 
     
     
       8. The method of manufacturing the mask of  claim 1 , wherein forming the plating layer on the conductive layer includes electroplating in which a current is applied to an anode and a cathode or a chemical plating in which a surface of the substrate is plated. 
     
     
       9. The method of manufacturing the mask of  claim 7 , wherein forming the plating layer on the conductive layer includes forming the plating layer having different widths in the auxiliary region in a direction extending from the plating layer to the cathode. 
     
     
       10. The method of manufacturing the mask of  claim 1 , wherein the conductive layer in the auxiliary region has a second plurality of openings, and a width between the openings in the auxiliary region adjacent to a cathode on the substrate is greater than a width between the openings in the auxiliary region distant from the cathode on the substrate. 
     
     
       11. The method of manufacturing the mask of  claim 10 , wherein a width between the openings in the pattern region is greater than the width between the openings in the auxiliary region distant from the cathode on the substrate and less than the width between the openings in the auxiliary region adjacent to the cathode on the substrate. 
     
     
       12. The method of manufacturing the mask of  claim 1 , wherein the conductive layer is formed by sputtering or rolling. 
     
     
       13. The method of manufacturing the mask of  claim 1 , wherein the conductive layer is formed of indium-tin-oxide (ITO) on molybdenum (ITO/Mo), copper (Cu) on a molybdenum-titanium alloy (MoTi), or ITO on copper (ITO/Cu). 
     
     
       14. A method of manufacturing a mask, comprising:
 forming a first conductive layer on a pattern region of a substrate; 
 forming a second conductive layer on an auxiliary region, the auxiliary region being around the pattern region of the substrate; 
 placing the substrate including the first and second conductive layers in a plating bath; 
 forming a first plating layer on the conductive layer in the pattern region; 
 forming a second plating layer on the auxiliary region in which the second plating layer has a different width than the first plating layer positioned on the pattern region; and 
 separating the substrate, the first conductive layer and the second conductive layer from the first plating layer and the second plating layer, 
 wherein the pattern region includes a plurality of cell regions, and the first conductive layer in the plurality of cell regions has a plurality of openings. 
 
     
     
       15. The method of manufacturing the mask of  claim 14  further including:
 forming a third conductive layer between the plurality of cell regions; and 
 forming a third plating layer between the plurality of cell regions, the third plating layer having a third width that is different from the first plating layer and the second plating layer. 
 
     
     
       16. The method of manufacturing the mask of  claim 14  wherein:
 the first and second conductive layers are formed at the same time, in the same steps. 
 
     
     
       17. The method of manufacturing the mask of  claim 14  wherein:
 the first and second plating layers are formed at the same time, in the same steps. 
 
     
     
       18. The method of manufacturing the mask of  claim 15  wherein:
 the first, second and third plating layers are formed at the same time, in the same steps.