Passivation layer and preparation method thereof, flexible thin film transistor and preparation method thereof, and array substrate

Abstract

The present disclosure discloses a passivation layer and a preparation method thereof, a flexible thin film transistor and a preparation method thereof, and an array substrate. The passivation layer of the present disclosure is a self-assembled monolayer formed by hydrophobic substances with a melting point of less than 100° C. The flexible thin film transistor of the present disclosure comprises a flexible substrate, a gate electrode, a gate dielectric layer, an active layer, a source-drain electrode layer and the passivation layer of the present disclosure.

What is claimed is: 
     
       1. A flexible thin film transistor, comprising a flexible substrate, a gate electrode, a gate dielectric layer, an active layer and a source-drain electrode layer, wherein the surface of the source-drain electrode layer is further provided with a passivation layer; the passivation layer is one of an n-octadecyl mercaptan self-assembled monolayer and an octadecylamine self-assembled monolayer; the thickness of the passivation layer is 1 nm˜5 nm; the preparation method of the passivation layer comprises the following steps: a substrate where the source-drain electrode layer is prepared is placed in a closed container, n-octadecyl mercaptan or octadecyl amine is then added into the closed container and heated to a melting point, vapor deposition is carried out so as to form the passivation layer on the source-drain electrode layer. 
     
     
       2. The flexible thin film transistor according to  claim 1 , wherein the material of the flexible substrate is polyimide. 
     
     
       3. The flexible thin film transistor according to  claim 1 , wherein the source electrode in the source-drain electrode layer is one of an indium tin oxide (ITO) electrode, a Al electrode, a Cu electrode and a Au electrode; the drain electrode in the source-drain electrode layer is one of the ITO electrode, the Al electrode, the Cu electrode and the Au electrode. 
     
     
       4. A preparation method of a flexible thin film transistor according to  claim 1 , comprising the following steps:
 Step 1: depositing a gate electrode, a gate dielectric layer, an active layer and a source-drain electrode layer on a flexible substrate in turn; and 
 Step 2: placing a substrate where a source-drain electrode layer is prepared in a closed container, then adding n-octadecyl mercaptan or octadecyl amine into the closed container and heating to a melting point, and performing vapor deposition so as to form a passivation layer on the source-drain electrode layer, that is, the flexible thin film transistor. 
 
     
     
       5. An array substrate, comprising a substrate and a thin film transistor arranged on the substrate, wherein the thin film transistor is the flexible thin film transistor according to  claim 1 .