Electronic devices including capacitors and related methods

Abstract

An electronic device includes one or more capacitors adjacent to a base material. The one or more capacitors comprise at least one electrode extending horizontally within the base material, and additional electrodes extending vertically within the base material and contacting the at least one electrode. The at least one electrode is located below and isolated from an upper surface of the base material. Additional electronic devices are disclosed, as are methods of forming an electronic device and related systems.

What is claimed is: 
     
       1. An electronic device comprising:
 one or more capacitors adjacent to a base material, the one or more capacitors comprising:
 at least one electrode extending horizontally within the base material, the at least one electrode located below and isolated from an upper surface of the base material; 
 additional electrodes extending vertically within the base material and directly physically contacting the at least one electrode; and 
 an upper electrode overlying the upper surface of the base material, the upper electrode directly physically contacting the additional electrodes with a major surface of the upper electrode substantially transverse to a longitudinal axis of the additional electrodes, portions of the base material vertically intervening between the at least one electrode and the upper electrode. 
 
 
     
     
       2. The electronic device of  claim 1 , wherein the major surface of the upper electrode is substantially parallel with a major surface of the at least one electrode. 
     
     
       3. The electronic device of  claim 1 , wherein the one or more capacitors are configured as buried, two-sided capacitors. 
     
     
       4. The electronic device of  claim 1 , wherein the one or more capacitors comprise first opposing surfaces of the base material horizontally adjacent to the additional electrodes and second opposing surfaces of the base material vertically adjacent to the at least one electrode, the second opposing surfaces of the base material being substantially orthogonal to the first opposing surfaces of the base material. 
     
     
       5. The electronic device of  claim 1 , further comprising a dielectric material adjacent to the at least one electrode, the additional electrodes, and the upper electrode, portions of the dielectric material extending directly between the upper electrode and the base material. 
     
     
       6. The electronic device of  claim 5 , wherein the at least one electrode is distal from the portions of the dielectric material extending directly between the upper electrode and the base material. 
     
     
       7. The electronic device of  claim 5 , wherein multiple portions of the dielectric material vertically intervene between the upper electrode and the at least one electrode. 
     
     
       8. The electronic device of  claim 1 , wherein the at least one electrode comprises a single electrode. 
     
     
       9. The electronic device of  claim 1 , wherein the at least one electrode comprises two or more electrodes, individual heights of the two or more electrodes substantially equal to one another. 
     
     
       10. The electronic device of  claim 1 , wherein an outermost horizontal boundary of the at least one electrode extends beyond an outermost horizontal boundary of a region including the additional electrodes. 
     
     
       11. The electronic device of  claim 10 , wherein an outermost horizontal boundary of the upper electrode extends beyond the outermost horizontal boundary of the region including the additional electrodes. 
     
     
       12. The electronic device of  claim 1 , wherein a surface area of an individual electrode of the at least one electrode is relatively greater than a surface area of the upper electrode. 
     
     
       13. The electronic device of  claim 1 , further comprising a substantially continuous portion of a conductive material extending within the at least one electrode, the additional electrodes, and the upper electrode. 
     
     
       14. The electronic device of  claim 1 , wherein the base material substantially surrounds individual electrodes of the at least one electrode on at least two consecutive sides. 
     
     
       15. The electronic device of  claim 1 , wherein portions of the additional electrodes extend beyond a lower surface of a lowermost electrode of the at least one electrode. 
     
     
       16. The electronic device of  claim 1 , wherein at least some of the additional electrodes comprise insulative support structures within central portions of the additional electrodes. 
     
     
       17. The electronic device of  claim 1 , wherein portions of the base material laterally intervene between neighboring additional electrodes. 
     
     
       18. An electronic device comprising:
 one or more capacitors adjacent to a base material, the one or more capacitors comprising:
 at least one electrode extending horizontally within the base material, the at least one electrode located below and isolated from an upper surface of the base material, wherein the at least one electrode comprises a first lower electrode and a second lower electrode, and a portion of the base material is located between the first lower electrode and the second lower electrode; and 
 additional electrodes extending vertically within the base material and contacting the at least one electrode. 
 
 
     
     
       19. The electronic device of  claim 18 , wherein a distance between the upper surface of the base material and the first lower electrode is about 300 nm and a distance between the upper surface of the base material and the second lower electrode is about 600 nm. 
     
     
       20. A method of forming an electronic device, comprising:
 forming a sacrificial material extending horizontally within a base material, the sacrificial material below and isolated from an upper surface of the base material; 
 forming openings extending to the sacrificial material; 
 removing the sacrificial material within the openings; and 
 forming a conductive material adjacent to the upper surface of the base material and within the openings, the conductive material configured as gate electrodes of one or more capacitors, the one or more capacitors comprising:
 at least one electrode extending horizontally within the base material, the at least one electrode located below and isolated from an upper surface of the base material; 
 additional electrodes extending vertically within the base material and directly physically contacting the at least one electrode; and 
 an upper electrode overlying the upper surface of the base material, the upper electrode directly physically contacting the additional electrodes with a major surface of the upper electrode substantially transverse to a longitudinal axis of the additional electrodes, portions of the base material vertically intervening between the at least one electrode and the upper electrode. 
 
 
     
     
       21. The method of  claim 20 , wherein forming the sacrificial material comprises forming a doped region within the base material, the doped region below and isolated from the upper surface of the base material. 
     
     
       22. The method of  claim 20 , wherein forming the openings extending to the sacrificial material comprises forming the openings extending vertically between the upper surface of the base material and the sacrificial material, and wherein removing the sacrificial material comprises forming additional openings extending horizontally within the base material. 
     
     
       23. The method of  claim 22 , further comprising forming a substantially continuous portion of a dielectric material along exposed surfaces of the base material within the openings and the additional openings and adjacent to the upper surface of the base material. 
     
     
       24. The method of  claim 23 , wherein forming the conductive material comprises forming a single conductive material adjacent to the dielectric material within the openings and the additional openings and adjacent to the upper surface of the base material in a single deposition act. 
     
     
       25. The method of  claim 22 , further comprising removing portions of the conductive material adjacent to the upper surface of the base material to form the upper electrode, the upper electrode having a width that is relatively less than a width of the conductive material within each of the additional openings.