Solid-state imaging device and electronic apparatus

Abstract

A solid-state imaging device is provided that comprises a first substrate that includes a first multi-layered wiring layer stacked on a first semiconductor substrate, a second substrate that includes a second multi-layered wiring layer and an insulating layer stacked on a second semiconductor substrate, and a third substrate that includes a third multi-layered wiring layer stacked on a third semiconductor substrate. A first coupling structure electrically couples the first and second substrates to each other. A second coupling structure exists on bonding surfaces of the second and third substrates, and includes an electrode junction structure in which electrodes formed on respective bonding surfaces are in direct contact with each other. A first via penetrates the second semiconductor substrate and electrically couples a first electrode to a wiring in the second multi-layered wiring layer. A second via electrically couples the second electrode to another wiring in the third multi-layered wiring layer.

What is claimed is: 
     
       1. A light detecting device, comprising:
 a first substrate that includes a first semiconductor substrate and a first multi-layered wiring layer on the first semiconductor substrate, wherein the first semiconductor substrate has pixels; 
 a second substrate that includes a second semiconductor substrate, a second multi-layered wiring layer on a first side of the second semiconductor substrate, and an insulating layer on a second side of the second semiconductor substrate, wherein the second side of the second semiconductor substrate is opposite to the first side of the second semiconductor substrate; 
 a third substrate that includes a third semiconductor substrate and a third multi-layered wiring layer on the third semiconductor substrate, wherein
 each of the second semiconductor substrate and the third semiconductor substrate includes a circuit, 
 the second substrate is between the first substrate and the third substrate, 
 the first multi-layered wiring layer is opposite to the second multi-layered wiring layer, 
 the insulating layer is opposite to the third multi-layered wiring layer, 
 the first substrate is electrically connected to the second substrate, and wherein
 the insulating layer includes a first electrode, 
 the third multi-layered wiring layer includes a second electrode, 
 the second substrate includes a first bonding surface, 
 the third substrate includes a second bonding surface, 
 the first electrode is joined to the second electrode at the first bonding surface of the second substrate and the second bonding surface of the third substrate; 
 
 
 a first via that penetrates the second semiconductor substrate, wherein the first via electrically connects the first electrode to a first wiring in the second multi-layered wiring layer; and 
 a second via that electrically connects the second electrode to a second wiring in the third multi-layered wiring layer. 
 
     
     
       2. The light detecting device according to  claim 1 , further comprising:
 a third via; and 
 a fourth via, 
 wherein the second semiconductor substrate is opposite to the third multi-layered wiring layer, and 
 wherein one of:
 the third via penetrates at least the second substrate from a front surface side of the second substrate and electrically connects a second determined wiring line in the second multi-layered wiring layer to a third determined wiring line in the third multi-layered wiring layer, or 
 the fourth via penetrates at least the third substrate from a back surface side of the third substrate and electrically connects the second determined wiring line in the second multi-layered wiring layer to the third determined wiring line in the third multi-layered wiring layer. 
 
 
     
     
       3. The light detecting device according to  claim 2 , further comprising:
 a plurality of vias; 
 a first through hole; and 
 a second through hole, wherein one of:
 each via of the plurality of vias has a first structure, wherein
 the first structure includes first electrically-conductive materials, 
 the first electrically-conductive materials are embedded in the first through hole and the second through hole, 
 the first through hole exposes the second determined wiring line in the second multi-layered wiring layer, 
 the second through hole exposes the third determined wiring line in the third multi-layered wiring layer, and 
 the second through hole is different from the first through hole, or 
 
 each via of the plurality of vias has a second structure, wherein
 the second structure includes films, 
 the films include second electrically-conductive materials, and 
 the films are on inner walls of the first through hole and the second through hole, and wherein 
 
 the plurality of vias includes at least the first via, the second via, the third via, and the fourth via. 
 
 
     
     
       4. The light detecting device according to  claim 2 , further comprising:
 a plurality of vias; 
 a first through hole; and 
 a second through hole, wherein one of:
 each via of the plurality of vias has a first structure, wherein
 the first structure includes a first electrically-conductive material, and 
 the first electrically-conductive material is embedded in one of:
 the first through hole to expose the third determined wiring line in the third multi-layered wiring layer, wherein the first through hole exposes a first portion of the second determined wiring line in the second multi-layered wiring layer, or 
 the second through hole to expose the second determined wiring line in the second multi-layered wiring layer, wherein the second through hole exposes a second portion of the third determined wiring line in the third multi-layered wiring layer, or 
 
 
 each via of the plurality of vias has a second structure, wherein
 the second structure includes a film, 
 the film includes a second electrically-conductive material, and 
 the film is on an inner wall of the first through hole, and 
 
 
 wherein the plurality of vias includes at least the first via, the second via, the third via, and the fourth via. 
 
     
     
       5. The light detecting device according to  claim 2 , further comprising:
 a first opening that penetrates at least the first substrate from a back surface side of the first substrate and exposes the second determined wiring line in the second multi-layered wiring layer; and 
 a second opening that penetrates at least the first substrate and the second substrate from the back surface side of the first substrate and exposes the third determined wiring line in the third multi-layered wiring layer. 
 
     
     
       6. The light detecting device according to  claim 5 , further comprising: pads that function as input/output (1/0) units and exist on a surface on a back side of the first substrate, wherein the second determined wiring line in the second multi-layered wiring layer that is exposed by the first opening and the third determined wiring line in the third multi-layered wiring layer that is exposed by the second opening comprise the pads that function as the 1/0 units. 
     
     
       7. The light detecting device according to  claim 2 , wherein
 each of the first multi-layered wiring layer, the second multi-layered wiring layer, and the third multi-layered wiring layer includes a plurality of first metal wiring layers, 
 the plurality of first metal wiring layers includes that include a first metal and a plurality of pads, 
 each pad of the plurality of pads includes a second metal, and 
 the second metal has a material that is different from a material of the first metal. 
 
     
     
       8. The light detecting device according to  claim 6 , further comprising:
 a film that includes an electrically-conductive material and is formed on an inner wall of the first opening that penetrates at least the first substrate from the back surface side of the first substrate and exposes the second determined wiring line in the second multi-layered wiring layer, and the second opening that penetrates at least the first substrate and the second substrate from the back surface side of the first substrate and exposes the third determined wiring line in the third multi-layered wiring layer,
 wherein the second determined wiring line in the second multi-layered wiring layer that is exposed by the first opening and the third determined wiring line in the third multi-layered wiring layer that is exposed by the second opening are electrically coupled to the pads by the electrically-conductive material. 
 
 
     
     
       9. The light detecting device according to  claim 7 , wherein
 the second determined wiring line in the second multi-layered wiring layer and the third determined wiring line in the third multi-layered wiring layer are electrically connected to a pad of the plurality of pads by an electrically-conductive material. 
 
     
     
       10. The light detecting device according to  claim 7 , wherein
 the second determined wiring line in the second multi-layered wiring layer is electrically connected to a first pad of the plurality of pads by an electrically-conductive material, 
 the third determined wiring line in the third multi-layered wiring layer is electrically connected to a second pad of the plurality of pads by the electrically-conductive material, and 
 the second pad is different from the first pad. 
 
     
     
       11. The light detecting device according to  claim 7 , further comprising:
 an insulating film on a back surface of the first substrate, wherein
 each pad of the plurality of pads is on the back surface, 
 the back surface is on a back side of the first substrate, and 
 the plurality of pads is on the insulating film. 
 
 
     
     
       12. The light detecting device according to  claim 7 , further comprising:
 an insulating film on a back surface of the first substrate, wherein
 each pad of the plurality of pads exists on the back surface, 
 the back surface is on a back side of the first substrate, and 
 each pad of the plurality of pads is embedded in the insulating film. 
 
 
     
     
       13. The light detecting device according to  claim 1 , further comprising a coupling structure, wherein
 the coupling structure electrically connects the first substrate to the third substrate, 
 the second semiconductor substrate is opposite to the third multi-layered wiring layer, and 
 the coupling structure includes one of:
 a fifth via that penetrates at least the first substrate and the second substrate from a back surface side of the first substrate, wherein the fifth via electrically couples connects a first determined wiring line in the first multi-layered wiring layer to a third determined wiring line in the third multi-layered wiring layer, or 
 a sixth via that penetrates at least the third substrate and the second substrate from a back surface side of the third substrate, wherein the sixth via electrically connects the first determined wiring line in the first multi-layered wiring layer to the third determined wiring line in the third multi-layered wiring layer. 
 
 
     
     
       14. The light detecting device according to  claim 13 , further comprising:
 a plurality of vias, 
 a first through hole; and 
 a second through hole, wherein one of:
 each via of the plurality of vias has a first structure, wherein
 the first structure includes first electrically-conductive materials, 
 the first electrically-conductive materials are embedded in the first through hole and the second through hole, 
 the first through hole exposes the first determined wiring line in the first multi-layered wiring layer, 
 the second through hole exposes the third determined wiring line in the third multi-layered wiring layer, and 
 the second through hole is different from the first through hole, or 
 
 each via of the plurality of vias has a second structure, wherein
 the second structure includes films, 
 the films include second electrically-conductive materials, 
 the films are on inner walls of the first through hole and the second through hole, and 
 
 
 wherein the plurality of vias includes at least the first via, the second via, the fifth via, and the sixth via. 
 
     
     
       15. The light detecting device according to  claim 13 , further comprising:
 a plurality of vias; 
 a first through hole; and 
 a second through hole, wherein
 each via of the plurality of vias has a first structure, wherein
 the first structure includes a first electrically-conductive material, 
 the first electrically-conductive material is embedded in one of:
 the first through hole provided to expose the third determined wiring line in the third multi-layered wiring layer, wherein the first through hole exposes a first portion of the first determined wiring line in the first multi-layered wiring layer, or 
 the second through hole to expose the first determined wiring line in the first multi-layered wiring layer, wherein the second through hole exposes a second portion of the third determined wiring line in the third multi-layered wiring layer, or 
 
 each via of the plurality of vias has a second structure, wherein
 the second structure includes a film, 
 the film includes a second electrically-conductive material, and 
 the film is on an inner wall of the first through hole, and wherein the plurality of vias include at least the first via, the second via, the fifth via, and the sixth via. 
 
 
 
 
     
     
       16. The light detecting device according to  claim 1 , wherein
 the circuit corresponds to at least one of a logic circuit or a memory circuit, 
 the logic circuit is configured to execute signal processing related to an operation of the light detecting device, and 
 the memory circuit is configured to temporarily hold a pixel signal acquired by each of the pixels. 
 
     
     
       17. The light detecting device according to  claim 1 , wherein
 the first semiconductor substrate includes a first semiconductor region, 
 the second semiconductor substrate includes a second semiconductor region, 
 the first semiconductor region is larger than the second semiconductor region, and 
 the first semiconductor region and the second semiconductor region have same impurity type. 
 
     
     
       18. The light detecting device according to  claim 1 , wherein
 the first semiconductor substrate includes a first semiconductor region, 
 the third semiconductor substrate includes a third semiconductor region, 
 the first semiconductor region is larger than the third semiconductor region, and 
 the first semiconductor region and the third semiconductor region have same impurity type. 
 
     
     
       19. The light detecting device according to  claim 18 , wherein the first semiconductor region and the third semiconductor region are a PWELL. 
     
     
       20. An electronic apparatus, comprising:
 a light detecting device configured to electronically shoot an image of a target, the light detecting device comprising:
 a first substrate that includes a first semiconductor substrate and a first multi-layered wiring layer on the first semiconductor substrate, wherein the first semiconductor substrate has pixels; 
 a second substrate that includes a second semiconductor substrate, a second multi-layered wiring layer on a first side of the second semiconductor substrate, and an insulating layer on a second side of the second semiconductor substrate, wherein the second side of the second semiconductor substrate is opposite to the first side of the second semiconductor substrate; 
 a third substrate that includes a third semiconductor substrate and a third multi-layered wiring layer on the third semiconductor substrate, wherein 
 each of the second semiconductor substrate and the third semiconductor substrate includes a circuit, 
 the second substrate is between the first substrate and the third substrate, 
 the first multi-layered wiring layer is opposite to the second multi-layered wiring layer, 
 the insulating layer is opposite to the third multi-layered wiring layer, 
 the first substrate is electrically connected to the second substrate, wherein
 the insulating layer includes a first electrode, 
 the third multi-layered wiring layer includes a second electrode, 
 the second substrate includes a first bonding surface, 
 the third substrate includes a second bonding surface, and 
 the first electrode is joined to the second electrode at the first bonding surface of the second substrate and the second bonding surface of the third substrate; 
 
 
 a first via that penetrates the second semiconductor substrate, wherein the first via electrically connects the first electrode to a first wiring in the second multi-layered wiring layer; and 
 a second via that electrically connects the second electrode to a second wiring in the third multi-layered wiring layer. 
 
     
     
       21. The light detecting device according to  claim 1 , wherein the second via is within the third multi-layered wiring layer. 
     
     
       22. The light detecting device according to  claim 1 , wherein the first via has a greater depth than the second via. 
     
     
       23. The light detecting device according to  claim 1 , wherein
 the insulating layer further includes a third electrode, 
 the third multi-layered wiring layer further includes a fourth electrode, and 
 the third electrode is joined to the fourth electrode at the first bonding surface of the second substrate and the second bonding surface of the third substrate.