Solid-state imaging element and imaging device

Abstract

A solid-state imaging element according to the present disclosure includes a plurality of first photoelectric conversion elements, a plurality of second photoelectric conversion elements, a plurality of current-voltage conversion circuits, and a plurality of address event detection circuits. The first photoelectric conversion elements are arranged side by side in a first region. The second photoelectric conversion elements are arranged side by side in a second region adjacent to the first region. The current-voltage conversion circuits each convert currents output from the first photoelectric conversion elements or the second photoelectric conversion elements into voltages. The address event detection circuits each detect a change in the voltages output from the current-voltage conversion circuits. At least either the current-voltage conversion circuits or the address event detection circuits connected to the second photoelectric conversion elements prevent output of signals based on the currents output from the second photoelectric conversion elements.

What is claimed is: 
     
       1. A solid-state imaging element, comprising:
 a plurality of first photoelectric conversion elements arranged side by side in a first region; 
 a plurality of second photoelectric conversion elements arranged side by side in a second region adjacent to the first region; 
 a plurality of current-voltage conversion circuits that each converts currents output from the plurality of first photoelectric conversion elements or the plurality of second photoelectric conversion elements into voltages; and 
 a plurality of address event detection circuits that each detects a change in the voltages output from the plurality of current-voltage conversion circuits, 
 wherein at least either the current-voltage conversion circuits or the address event detection circuits connected to the second photoelectric conversion elements prevent output of signals based on the currents output from the second photoelectric conversion elements, 
 wherein internal potentials of at least either the current-voltage conversion circuits or the address event detection circuits connected to the second photoelectric conversion elements are fixed, 
 wherein the current-voltage conversion circuits connected to the second photoelectric conversion elements include a plurality of transistors, and 
 wherein the internal potentials of the current-voltage conversion circuits connected to the second photoelectric conversion elements are fixed by short-circuiting the plurality of transistors. 
 
     
     
       2. The solid-state imaging element according to  claim 1 , wherein the second region is provided to surround the first region. 
     
     
       3. The solid-state imaging element according to  claim 1 , wherein the internal potentials of at least either the current-voltage conversion circuits or the address event detection circuits connected to the second photoelectric conversion elements are fixed by an external voltage. 
     
     
       4. The solid-state imaging element according to  claim 1 , further comprising a power supply region provided outside the second region and having power supply wiring and ground wiring. 
     
     
       5. The solid-state imaging element according to  claim 4 , wherein an internal potential of the power supply region is fixed. 
     
     
       6. The solid-state imaging element according to  claim 4 , wherein the power supply region is electrically integrated. 
     
     
       7. The solid-state imaging element according to  claim 4 , wherein the power supply region surrounds four sides of the second region. 
     
     
       8. The solid-state imaging element according to  claim 4 , wherein the power supply region surrounds two sides of the second region. 
     
     
       9. The solid-state imaging element according to  claim 4 , wherein the power supply region surrounds one side of the second region. 
     
     
       10. The solid-state imaging element according to  claim 4 , further comprising a pad region provided around the power supply region, wherein the pad region includes a contact hole and a bonding pad. 
     
     
       11. An imaging device, comprising:
 a solid-state imaging element; 
 an optical system that captures incident light from a subject and forms an image on an imaging surface of the solid-state imaging element; and 
 a control unit that controls the solid-state imaging element, 
 wherein the solid-state imaging element includes;
 a plurality of first photoelectric conversion elements arranged side by side in a first region; 
 a plurality of second photoelectric conversion elements arranged side by side in a second region adjacent to the first region; 
 a plurality of current-voltage conversion circuits that each converts currents output from the plurality of first photoelectric conversion elements or the plurality of second photoelectric conversion elements into voltages; and 
 a plurality of address event detection circuits that each detects a change in the voltages output from the plurality of current-voltage conversion circuits; 
 wherein at least either the current-voltage conversion circuits or the address event detection circuits prevent output of signals based on the currents output from the plurality of second photoelectric conversion elements, 
 wherein internal potentials of at least either the current-voltage conversion circuits or the address event detection circuits connected to the second photoelectric conversion elements are fixed, 
 wherein the current-voltage conversion circuits connected to the second photoelectric conversion elements include a plurality of transistors, and 
 wherein the internal potentials of the current-voltage conversion circuits connected to the second photoelectric conversion elements are fixed by short-circuiting the plurality of transistors. 
 
 
     
     
       12. The imaging device according to  claim 11 , wherein the second region is provided to surround the first region. 
     
     
       13. The imaging device according to  claim 11 , wherein the internal potentials of at least either the current-voltage conversion circuits or the address event detection circuits connected to the second photoelectric conversion elements are fixed by an external voltage. 
     
     
       14. The imaging device according to  claim 11 , further comprising a power supply region provided outside the second region and having power supply wiring and ground wiring. 
     
     
       15. The imaging device according to  claim 14 , wherein an internal potential of the power supply region is fixed. 
     
     
       16. The imaging device according to  claim 14 , wherein the power supply region is electrically integrated. 
     
     
       17. The imaging device according to  claim 14 , wherein the power supply region surrounds four sides of the second region. 
     
     
       18. The imaging device according to  claim 14 , wherein the power supply region surrounds two sides of the second region. 
     
     
       19. The imaging device according to  claim 14 , wherein the power supply region surrounds one side of the second region. 
     
     
       20. The imaging device according to  claim 14 , further comprising a pad region provided around the power supply region, wherein the pad region includes a contact hole and a bonding pad.