Etched trenches in bond materials for die singulation, and associated systems and methods

Abstract

Etched trenches in a bond material for die singulation, and associated systems and methods are disclosed. A method for solid state transducer device singulation in accordance with one embodiment includes forming a plurality of trenches by etching through a metallic bond material forming a bond between a carrier substrate and a plurality of the dies and singulating the carrier substrate along the trenches to separate the dies. In particular embodiments, the trenches extend into the carrier substrate. In further particular embodiments, the dies are at least partially encapsulated in a dielectric material.

We claim: 
     
       1. A solid state transducer (SST) device, comprising:
 a SST die including a layer of first semiconductor material a layer of second semiconductor material, and a layer of active material disposed between the layers of first and second semiconductor materials; 
 a carrier substrate; 
 a bond material directly bonding the layer of second semiconductor material and the carrier substrate, the bond material having concave sidewalls extending between the layer of second semiconductor material and the carrier substrate; and 
 a protective material encapsulating at least the concave sidewalls of the bond material, the protective material having vertical sidewalls, the vertical sidewalls extending below an upper surface of the carrier substrate, 
 wherein the SST die has a first width along a lateral axis, the carrier substrate has a second width along the lateral axis greater than the first width, and the bond material has a third width along the lateral axis, measured between recessed regions of opposite ones of the concave sidewalls, less than the first width. 
 
     
     
       2. The SST device of  claim 1 , wherein the third width corresponds to a narrowest portion of the bond material along the lateral axis. 
     
     
       3. The SST device of  claim 1 , wherein outer surfaces of the bond material intersecting the lateral axis have curved profiles. 
     
     
       4. The SST device of  claim 1 , wherein the second width corresponds to a widest portion of the carrier substrate along the lateral axis. 
     
     
       5. The SST device of  claim 1 , wherein outer surfaces of the carrier substrate spaced apart by the second width have generally planar profiles. 
     
     
       6. The SST device of  claim 1 , wherein outer surfaces of the carrier substrate along the lateral axis that are spaced apart by less than the second width have curved profiles. 
     
     
       7. The SST device of  claim 1 , wherein the protective material encapsulates outer surfaces of the SST die and the carrier substrate, wherein the outer surfaces intersect the lateral axis. 
     
     
       8. The SST device of  claim 7 , wherein the protective material at least partially encapsulates a top surface of the SST die. 
     
     
       9. The SST device of  claim 7 , wherein the protective material does not encapsulate outermost surfaces of the carrier substrate that intersect the lateral axis. 
     
     
       10. The SST device of  claim 7 , wherein the protective material comprises a dielectric polymer, a dielectric epoxy, or a combination thereof. 
     
     
       11. The SST device of  claim 7 , wherein the protective material comprises a silicone-based material that is generally transparent to a wavelength of radiation configured to be emitted by the SST die. 
     
     
       12. The SST device of  claim 1 , wherein the carrier substrate comprises crystalline silicon. 
     
     
       13. The SST device of  claim 1 , wherein the bond material includes at least one of NiSn, CuSn and TiSi. 
     
     
       14. A solid state transducer (SST) device, comprising:
 a SST die having a first width along a lateral axis, the SST die including a layer of first semiconductor material a layer of second semiconductor material, and a layer of active material disposed between the layers of first and second semiconductor materials; 
 a carrier substrate having a second width along the lateral axis greater than the first width; 
 a bond material directly bonding the layer of second semiconductor material and the carrier substrate, wherein the bond material has outer surfaces intersecting the lateral axis with opposing concave profiles; and 
 a protective material encapsulating at least the outer surfaces of the bond material with opposing concave profiles, the protective material having sidewalls with a vertical portion alongside the SST die and a curvilinear portion generally following a curvature of an indentation in the carrier substrate. 
 
     
     
       15. The SST device of  claim 14 , wherein the bond material has a third width along the lateral axis less than the first width. 
     
     
       16. The SST device of  claim 15 , wherein the third width corresponds to a narrowest portion of the bond material along the lateral axis. 
     
     
       17. The SST device of  claim 14 , wherein the second width corresponds to a widest portion of the carrier substrate along the lateral axis. 
     
     
       18. The SST device of  claim 14 , wherein outer surfaces of the carrier substrate spaced apart by the second width have generally planar profiles. 
     
     
       19. The SST device of  claim 14 , wherein outer surfaces of the carrier substrate along the lateral axis that are spaced apart by less than the second width have curved profiles. 
     
     
       20. The SST device of  claim 14 , further comprising a protective material encapsulating outer surfaces of the SST die, the carrier substrate, and the bond material, wherein the outer surfaces intersect the lateral axis.