5G dual-band up-mixer with switching between amplification function and frequency mixing function, and terminal

Abstract

The present invention belongs to the technical field of 5G millimeter wave communication and discloses a 5G dual-band up-mixer with switching between amplification function and frequency mixing function, and terminal. The first double-balanced active mixer and the second double-balanced active mixer are connected in series, and both ends of the first double-balanced active mixer are connected with a first transformer and a second transformer respectively; both ends of the second double-balanced active mixer are respectively connected with the second transformer and the third transformer; the first double-balanced active mixer is provided with a first MOSFET and a fourth transformer connected with the first MOSFET; the second double-balanced active mixer is provided with a second MOSFET and a fifth transformer connected with the second MOSFET.

The invention claimed is: 
     
       1. A 5G dual-band up-mixer with switching of amplification and mixing functions, comprises:
 a first double-balanced active mixer and a second double-balanced active mixer, wherein
 the first double-balanced active mixer and the second double-balanced active mixer are connected in series; 
 the ends of the first double-balanced active mixer are respectively connected with a first transformer and a second transformer; 
 the ends of the second double-balanced active mixer are respectively connected with the second transformer and a third transformer; 
 the first double-balanced active mixer is provided with a first MOSFET set (M 1 , M 2 , M 3 , and M 4 ) and a fourth transformer connected to the first MOSFET set, and 
 the second double-balanced active mixer is provided with a second MOSFET set (M 5 , M 6 , M 7 , and M 8 ) and a fifth transformer connected to the second MOSFET set. 
 
 
     
     
       2. The 5G dual-band up-mixer with switching of amplification and mixing functions according to  claim 1 , wherein
 one end of the primary coil of the first transformer is connected to an IF signal port, and the other end of the primary coil of the first transformer is connected to ground; and 
 one end of the secondary coil of the first transformer is connected to the sources of MOSFET (M 1 ) and MOSFET (M 2 ), the other end of the secondary coil of the first transformer is connected to the sources of MOSFET (M 3 ) and MOSFET (M 4 ), and the center tap of the secondary coil of the first transformer is connected to ground. 
 
     
     
       3. The 5G dual-band up-mixer with switching of amplification and mixing functions according to  claim 1 , wherein the gates of MOSFET (M 1 ) and MOSFET (M 4 ) are connected to a LO 1 + signal terminal, and the gates of MOSFET (M 2 ) and MOSFET (M 3 ) are connected to a LO 1 − signal terminal; wherein
 one end of the primary coil of the fourth transformer is connected to the LO 1 + signal terminal, and the other end of the primary coil of the fourth transformer is connected to the LO 1 − signal terminal; and 
 one end of the secondary coil of the fourth transformer is connected to a LO signal port, and the other end of the secondary coil of the fourth transformer is connected to ground. 
 
     
     
       4. A 5G dual-band up-mixer with switching of amplification and mixing functions according to  claim 1 , wherein a first resistor (R 1 ) is connected between the LO 1 − signal terminal and a first bias voltage (Vb 1 ), and a second resistor (R 2 ) is connected between the LO 1 + signal terminal and the first bias voltage. 
     
     
       5. The 5G dual-band up-mixer with switching of amplification and mixing functions according to  claim 1 , wherein
 one end of the primary coil of the second transformer is connected to the drains of MOSFET (M 1 ) and MOSFET (M 3 ), the other end of the primary coil of the second transformer is connected to the drains of MOSFET (M 2 ) and MOSFET (M 4 ), and the center tap of the primary coil of the second transformer is connected to a power supply (Vdd); and 
 one end of the secondary coil of the second transformer is connected to the sources of MOSFET (M 5 ) and MOSFET (M 6 ), the other end of the secondary coil of the second transformer is connected to the sources of MOSFET (M 7 ) and MOSFET (M 8 ), and the center tap of the secondary coil of the second transformer is connected to ground. 
 
     
     
       6. The 5G dual-band up-mixer with switching of amplification and mixing functions according to  claim 1 , wherein the gates of MOSFET (M 5 ) and MOSFET (M 8 ) are connected to LO 2 + signal terminal, and the gates of MOSFET (M 6 ) and MOSFET (M 7 ) are connected to a LO 2 − signal terminal. 
     
     
       7. The 5G dual-band up-mixer with switching of amplification and mixing functions according to  claim 6 , wherein
 one end of the primary coil of the fifth transformer is connected in series with a first switch (S 1 ) and a first capacitor (C 1 ) to the LO 2 − signal terminal, and the other end of the primary coil of the fifth transformer is connected in series with a second switch (S 2 ) and a second capacitor (C 2 ) to the LO 2 + signal terminal; and 
 one end of the secondary coil of the fifth transformer is connected to the LO signal port, and the other end of the secondary coil of the fifth transformer is connected to ground. 
 
     
     
       8. The 5G dual-band up-mixer with switching of amplification and mixing functions according to  claim 6 , wherein
 a third resistor (R 3 ) is connected between the LO 2 − signal terminal and a second bias voltage (Vb 2 ), and 
 a fourth resistor (R 4 ) is connected between the LO 2 + signal terminal and a third bias voltage (Vb 3 ).