Organic light emitting diode display substrate, preparation method and repair method therefor and organic light emitting diode display apparatus

Abstract

A display substrate, a preparation method and a repair method thereof, and a display apparatus. The display substrate includes a driver circuit layer and an emissive structure layer overlappingly disposed on a base, the driver circuit layer including a drive transistor, an auxiliary cathode wire and a repair electrode, an anode of the emissive structure layer being connected to a drain electrode of the drive transistor, a cathode of the emissive structure layer being connected to the auxiliary cathode wire, and the repair electrode being configured so as to connect the drain electrode of the drive transistor and the auxiliary cathode wire when repairing a bright spot defect.

What is claimed is: 
     
       1. A display substrate, comprising:
 a driving circuit layer and a light-emitting structure layer which are stacked on a substrate, wherein the driving circuit layer comprises a driving transistor, an auxiliary cathode line and a repair electrode, an anode of the light-emitting structure layer is connected with a drain electrode of the driving transistor, a cathode of the light-emitting structure layer is connected with the auxiliary cathode line, the repair electrode is arranged to connect the drain electrode of the driving transistor with the auxiliary cathode line when repairing a defective bright spot, 
 wherein the repair electrode is arranged in a first structural layer, the drain electrode of the driving transistor and the auxiliary cathode line are arranged in a second structural layer, an insulating layer is arranged between the first structural layer and the second structural layer, the repair electrode and the drain electrode of the driving transistor have a first overlapping region, and the repair electrode and the auxiliary cathode line have a second overlapping region, 
 wherein the drain electrode and the auxiliary cathode line are arranged on a same layer as data lines, and formed of a same material and by a same patterning process, 
 wherein the insulating layer comprises a first insulating layer and a second insulating layer, 
 wherein the first insulating layer covers gate lines, a first gate electrode, a second gate electrode, a first capacitor electrode and the repair electrode, 
 wherein a first active layer, a second active layer and a second capacitor electrode are arranged on the first insulating layer, and 
 wherein the second insulating layer covers the first active layer, the second active layer and the second capacitor electrode. 
 
     
     
       2. The display substrate according to  claim 1 , wherein the repair electrode is arranged in a same layer as the gate lines. 
     
     
       3. The display substrate according to  claim 1 , wherein the first overlapping region is provided with a via hole, and the drain electrode of the driving transistor is connected with the repair electrode through the via hole. 
     
     
       4. The display substrate according to  claim 1 , wherein the second overlapping region is provided with a via hole, and the auxiliary cathode line is connected with the repair electrode through the via hole. 
     
     
       5. The display substrate according to  claim 4 , wherein the repair electrode is a repair electrode line, which is parallel to a gate lines, a plurality of repair electrode lines and a plurality of auxiliary cathode lines of the driving circuit layer form a grid structure. 
     
     
       6. The display substrate according to  claim 1 , wherein the driving circuit layer further comprises a switching transistor and a storage capacitor, the driving transistor and the switching transistor have a bottom gate structure respectively and the light-emitting structure layer has a top emission structure. 
     
     
       7. A display device, comprising the display substrate according to  claim 1 . 
     
     
       8. A preparation method for a display substrate, comprising:
 forming a driving circuit layer comprising a driving transistor, an auxiliary cathode line and a repair electrode on a substrate, wherein the repair electrode is arranged to connect a drain electrode of the driving transistor with the auxiliary cathode line when repairing a defective bright spot; and 
 forming a light-emitting structure layer on the driving circuit layer, wherein an anode of the light-emitting structure layer is connected with a drain electrode of the driving transistor, and a cathode of the light-emitting structure layer is connected with the auxiliary cathode line, 
 wherein forming the driving circuit layer comprising the driving transistor, the auxiliary cathode line and the repair electrode on the substrate comprises: 
 forming the repair electrode in a first structural layer; 
 forming the drain electrode of the driving transistor and the auxiliary cathode line in a second structural layer; and 
 forming an insulating layer between the first structural layer and the second structural layer, 
 wherein the repair electrode and the drain electrode of the driving transistor have a first overlapping region, and the repair electrode and the auxiliary cathode line have a second overlapping region, 
 wherein the drain electrode and the auxiliary cathode line are arranged on a same layer as data lines, and formed of a same material and by a same patterning process, 
 wherein the insulating layer comprises a first insulating layer and a second insulating layer, 
 wherein the first insulating layer covers gate lines, a first gate electrode, a second gate electrode, a first capacitor electrode and the repair electrode, 
 wherein a first active layer, a second active layer and a second capacitor electrode are arranged on the first insulating layer, and 
 wherein the second insulating layer covers the first active layer, the second active layer and the second capacitor electrode. 
 
     
     
       9. The preparation method according to  claim 8 , wherein the repair electrode is arranged in a same layer as the gate lines and formed by a same patterning process as the gate lines. 
     
     
       10. The preparation method according to  claim 8 , wherein the forming the driving circuit layer comprising the driving transistor, the auxiliary cathode line and the repair electrode on the substrate comprises:
 forming a via hole in the first overlapping region, and the drain electrode of the driving transistor is connected with the repair electrode through the via hole. 
 
     
     
       11. The preparation method according to  claim 8 , wherein the forming the driving circuit layer comprising the driving transistor, the auxiliary cathode line and the repair electrode on the substrate comprise:
 forming a via hole in the second overlapping region, and the auxiliary cathode line is connected with the repair electrode through the via hole. 
 
     
     
       12. The preparation method according to  claim 11 , wherein the repair electrode is a repair electrode line, the repair electrode line is parallel to the gate lines, a plurality of repair electrode lines and a plurality of auxiliary cathode lines of the driving circuit layer form a grid structure. 
     
     
       13. The preparation method according to  claim 8 , wherein the forming the driving circuit layer comprising the driving transistor, the auxiliary cathode line and the repair electrode on the substrate comprises:
 forming a switching transistor and a storage capacitor, 
 wherein the driving transistor and the switching transistor have a bottom gate structure respectively; and the light-emitting structure layer formed on the driving circuit layer is a top emission structure. 
 
     
     
       14. A repair method for a display substrate, wherein
 the display substrate comprises a driving circuit layer and a light-emitting structure layer which are stacked on a substrate, the driving circuit layer comprising a driving transistor, an auxiliary cathode line and a repair electrode, an anode of the light-emitting structure layer being connected with a drain electrode of the driving transistor, and a cathode of the light-emitting structure layer being connected with the auxiliary cathode line; when repairing a defective bright spot, the repair method comprising: 
 connecting the drain electrode of the driving transistor with the auxiliary cathode line by using the repair electrode, 
 wherein the repair electrode is arranged in a first structural layer, the drain electrode of the driving transistor and the auxiliary cathode line are arranged in a second structural layer, an insulating layer is arranged between the first structural layer and the second structural layer, the repair electrode and the drain electrode of the driving transistor have a first overlapping region, and the repair electrode and the auxiliary cathode line have a second overlapping region; 
 wherein the drain electrode and the auxiliary cathode line are arranged on a same layer as data lines, and formed of a same material and by a same patterning process; 
 wherein the insulating layer comprises a first insulating layer and a second insulating layer; 
 wherein the first insulating layer covers gate lines, a first gate electrode, a second gate electrode, a first capacitor electrode and the repair electrode; 
 wherein a first active layer, a second active layer and a second capacitor electrode are arranged on the first insulating layer; and 
 wherein the second insulating layer covers the first active layer, the second active layer and the second capacitor electrode. 
 
     
     
       15. The repair method according to  claim 14 , wherein connecting the drain electrode of the driving transistor with the auxiliary cathode line by using the repair electrode comprises:
 irradiating the first overlapping region and the second overlapping region with laser from a side of the substrate away from the driving circuit layer, welding the repair electrode with the drain electrode of the driving transistor, and welding the repair electrode with the auxiliary cathode line. 
 
     
     
       16. The repair method according to  claim 15 , wherein a power of the laser irradiation is 50 mW to 100 mW. 
     
     
       17. The repair method according to  claim 14 , wherein the repair electrode is connected with the drain electrode of the driving transistor through a via hole, and connecting the drain electrode of the driving transistor with the auxiliary cathode line by using the repair electrode comprises:
 irradiating the second overlapping region with laser from a side of the substrate away from the driving circuit layer, and welding the repair electrode with the auxiliary cathode line. 
 
     
     
       18. The repair method according to  claim 14 , wherein the repair electrode is connected with the auxiliary cathode line through a via hole; and connecting the drain electrode of the driving transistor with the auxiliary cathode line by using the repair electrode comprises:
 irradiating the first overlapping region with laser from a side of the substrate away from the driving circuit layer, and welding the repair electrode with the drain electrode of the driving transistor.