US12154836B2ActiveUtilityA1

Semiconductor device with spaced apart containers

59
Assignee: TOSHIBA KKPriority: Sep 22, 2021Filed: Mar 2, 2022Granted: Nov 26, 2024
Est. expirySep 22, 2041(~15.2 yrs left)· nominal 20-yr term from priority
Inventors:Hisashi Tomita
H10W 72/00H10W 40/255H10W 40/47H10W 76/161H10W 76/136H01L 23/50H01L 23/473H01L 23/3735H01L 23/049
59
PatentIndex Score
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Cited by
17
References
20
Claims

Abstract

According to one embodiment, a semiconductor device includes a first container and a second container. The second container is inside the first container. A semiconductor element is inside the second container. The second container is formed of a lower portion, a side portion fixed to the lower portion, and an upper portion fixed to the side portion and the first container. The side portion is a first metal material covered with a first insulator. The lower portion and the side portion of the second container are spaced from the first container. The semiconductor device may be used as a power module or the like in some instances, and the semiconductor element may be one or more transistors of the like.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A semiconductor device, comprising:
 a first container; 
 a second container inside the first container; 
 a semiconductor element inside the second container; and 
 a chiller outside the first container and configured to inject a refrigerant into a space between the first container and the second container and to discharge the refrigerant from the space, wherein 
 the second container comprises:
 a lower portion; 
 a side portion fixed to the lower portion, the side portion being a first metal material covered with a first insulator; and 
 an upper portion fixed to the side portion and the first container, and 
 
 the lower portion and the side portion of the second container being spaced from the first container. 
 
     
     
       2. The semiconductor device according to  claim 1 , wherein the upper portion of the second container comprises:
 a second metal material; and 
 a second insulator on the second metal member. 
 
     
     
       3. The semiconductor device according to  claim 2 , wherein
 the first metal material comprises one of aluminum or copper, and 
 the second metal material comprises one of aluminum or copper. 
 
     
     
       4. The semiconductor device according to  claim 2 , wherein the first insulator comprises alumina. 
     
     
       5. The semiconductor device according to  claim 2 , further comprising:
 a conductor having a first end on the outside of the first container and a second end electrically connected to the semiconductor element, wherein 
 the conductor extends along an inner sidewall of the first container, and 
 the conductor extends along the side portion of the second container inside the second container. 
 
     
     
       6. The semiconductor device according to  claim 5 , further comprising:
 a third insulator covering a part of the conductor that is on the upper portion of the second container. 
 
     
     
       7. The semiconductor device according to  claim 5 , wherein
 the lower portion of the second container comprises a substrate that is copper or ceramic, and 
 the second end of the conductor is connected to the substrate. 
 
     
     
       8. The semiconductor device according to  claim 1 , wherein the first container has a sidewall extending between a lower base portion and an upper lid portion. 
     
     
       9. The semiconductor device according to  claim 8 , wherein the sidewall has a first hole and a second hole therein. 
     
     
       10. The semiconductor device according to  claim 1 , further comprising:
 a heat dissipation member attached to an outer surface of the lower portion of the second container. 
 
     
     
       11. The semiconductor device according to  claim 1 , wherein the semiconductor element is a transistor. 
     
     
       12. A power module, comprising:
 a first container having:
 an outer base substrate, 
 an outer case sidewall on the outer base substrate, and 
 an outer lid fixed to the outer case sidewall; 
 
 a second container inside the first container, the second container having:
 a lower base substrate substantially parallel to the outer base substrate and spaced from the outer base substrate, 
 an inner case sidewall on the lower base substrate and spaced from the outer case sidewall, and 
 an inner lid fixed to the inner case sidewall and the outer case sidewall, the inner lid spaced from the outer lid; 
 
 a semiconductor element mounted inside the second container; and 
 a first bus bar connecting a first terminal portion on the outside of the first container to the semiconductor element inside the second container, wherein 
 the inner case sidewall is a first metal coated with a first insulator material, 
 the inner lid is a second metal coated with a second insulator material, and 
 the first bus bar includes a portion extending along an interior sidewall of the outer case sidewall, a portion extending along an upper surface of the inner lid, a portion extending along on an interior sidewall of the inner case sidewall, and a portion on an element terminal inside the second container. 
 
     
     
       13. The power module according to  claim 12 , wherein
 the first metal is one of aluminum or copper, and 
 the second metal is one of aluminum or copper. 
 
     
     
       14. The power module according to  claim 12 , further comprising:
 a second bus bar connecting a second terminal portion on the outside of the first container to the semiconductor element inside the second container, wherein 
 the second bus bar includes a portion extending along an upper surface of the outer lid, a portion extending from the outer lid through the upper surface of the inner lid, and a portion extending along the inner interior sidewall of the inner case sidewall. 
 
     
     
       15. The power module according to  claim 14 , wherein the first and second bus bars are copper. 
     
     
       16. The power module according to  claim 12 , wherein
 the first metal is aluminum, and 
 the first insulator material is alumina. 
 
     
     
       17. The power module according to  claim 12 , further comprising:
 a refrigerant in a space between the first container and the second container. 
 
     
     
       18. The power module according to  claim 17 , further comprising:
 a chiller outside the first container and configured to inject the refrigerant into the space between the first container and the second container and to discharge the refrigerant from the space. 
 
     
     
       19. A semiconductor device, comprising:
 a first container; 
 a second container inside the first container; 
 a semiconductor element inside the second container; and 
 a chiller, wherein 
 the second container comprises:
 a lower portion; 
 a side portion fixed to the lower portion, the side portion being a first metal material covered with a first insulator; and 
 an upper portion fixed to the side portion and the first container, 
 
 the lower portion and the side portion of the second container being spaced from the first container, 
 the first container has a sidewall extending between a lower base portion and an upper lid portion, 
 the sidewall has a first hole and a second hole therein, and 
 the chiller is configured to inject a refrigerant through the first hole into a space between the first container and the second container, and discharge the refrigerant from the space through the second hole. 
 
     
     
       20. The semiconductor device according to  claim 19 , further comprising:
 a heat dissipation member attached to an outer surface of the lower portion of the second container.

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