Semiconductor device forming method and substrate processing apparatus

Abstract

A semiconductor device forming method that includes a step for forming a coating layer and a step for performing etching. In the step for forming a coating layer, the coating layer is formed. The coating layer selectively covers a portion of a recess provided in a stacked structure supported by a base member. The portion of the recess is located on a front surface side of the recess. In the step for performing etching, a deep portion, which is deeper than the coating layer, of the recess is etched with a chemical liquid so as to widen a diameter of the deep portion.

The invention claimed is: 
     
       1. A semiconductor device forming method, comprising:
 forming a coating layer that selectively covers a portion of a recess provided in a stacked structure supported by a base member, the portion of the recess being located on a front surface side of the recess; and 
 etching a deep portion, which is deeper than the coating layer, of the recess with a chemical liquid so as to widen a diameter of the deep portion of the recess, wherein the forming the coating layer includes: 
 forming a partially packed bed that fills the deep portion of the recess; 
 supplying a water-repellent agent after forming the partially packed bed; and 
 removing the partially packed bed and the water-repellent agent after supplying the water-repellent agent to form the coating layer on the front surface side of the recess. 
 
     
     
       2. The semiconductor device forming method according to  claim 1 , wherein the removing the partially packed bed includes supplying a removal liquid to dissolve the partially packed bed. 
     
     
       3. The semiconductor device forming method according to  claim 1 , wherein:
 the partially packed bed contains a substance that sublimes; and 
 the removing the partially packed bed includes heating the partially packed bed. 
 
     
     
       4. The semiconductor device forming method according to  claim 1 , wherein the forming the partially packed bed includes:
 forming the packed bed that fills the recess; and 
 partially removing the packed bed after the packed bed is formed. 
 
     
     
       5. The semiconductor device forming method according to  claim 4 , wherein the partially removing the packed bed includes supplying a removal liquid for removing the packed bed. 
     
     
       6. The semiconductor device forming method according to  claim 1 , wherein the chemical liquid in the etching contains any of hydrofluoric acid, water, and phosphoric acid. 
     
     
       7. The semiconductor device forming method according to  claim 1 , wherein a plurality of memory cells are formed in the recess. 
     
     
       8. The semiconductor device forming method according to  claim 1 , wherein:
 in the forming the coating layer, the coating layer selectively covers the portion of the recess, which is each of a plurality of recesses, provided in the stacked structure; and 
 differences between top diameters of the recesses are 5% or less. 
 
     
     
       9. The semiconductor device forming method according to  claim 8 , wherein the recesses are regularly arranged in the stacked structure. 
     
     
       10. The semiconductor device forming method according to  claim 1 , wherein an etch stop layer is arranged between the base member and the stacked structure.