Nitride semiconductor device

Abstract

A nitride semiconductor device 1 includes a first nitride semiconductor layer 4 that constitutes an electron transit layer, a second nitride semiconductor layer 5 that is formed on the first nitride semiconductor layer, is larger in bandgap than the first nitride semiconductor layer, and constitutes an electron supply layer, and a gate portion 20 that is formed on the second nitride semiconductor layer. The gate portion 20 includes a first semiconductor gate layer 21 of a ridge shape that is disposed on the second nitride semiconductor layer 5 and is constituted of a nitride semiconductor containing an acceptor type impurity, a second semiconductor gate layer 22 that is formed on the first semiconductor gate layer 21 and is constituted of a nitride semiconductor with a larger bandgap than the first semiconductor gate layer 21 , and a gate electrode 23 that is formed on the second semiconductor gate layer 22 and is in Schottky junction with the second semiconductor gate layer 22.

The invention claimed is: 
     
       1. A nitride semiconductor device comprising:
 a first nitride semiconductor layer that constitutes an electron transit layer; 
 a second nitride semiconductor layer that is formed on the first nitride semiconductor layer, is larger in bandgap than the first nitride semiconductor layer, and constitutes an electron supply layer; and 
 a gate portion that is formed on the second nitride semiconductor layer, 
 wherein the gate portion includes
 a first semiconductor gate layer of a ridge shape that is disposed on the second nitride semiconductor layer and is constituted of a nitride semiconductor containing an acceptor type impurity, 
 a second semiconductor gate layer that is formed on the first semiconductor gate layer and is constituted of a nitride semiconductor with a larger bandgap than the first semiconductor gate layer, and 
 a gate electrode that is formed on the second semiconductor gate layer and is in Schottky junction with the second semiconductor gate layer, 
 
 wherein the second nitride semiconductor layer is constituted of an AlGaN laver, the first semiconductor gate layer is constituted of a p type GaN layer, and the second semiconductor gate layer is constituted of an AlGaN layer, 
 wherein a third nitride semiconductor layer that is constituted of an AlGaN layer of higher Al composition than the second nitride semiconductor layer is formed on the second nitride semiconductor layer, 
 wherein the gate portion is formed on the third nitride semiconductor layer, and 
 wherein a removed portion in which a portion of the third nitride semiconductor layer is removed is formed in a region between the gate portion and a drain electrode. 
 
     
     
       2. The nitride semiconductor device according to  claim 1 , further comprising:
 a source electrode disposed on the second nitride semiconductor layer, 
 wherein the drain electrode is disposed on the second nitride semiconductor layer, 
 wherein the source electrode and the drain electrode are respectively in ohmic junction with the second nitride semiconductor layer. 
 
     
     
       3. The nitride semiconductor device according to  claim 2 , wherein a metal material of the gate electrode differs from a metal material of the source electrode and the drain electrode. 
     
     
       4. The nitride semiconductor device according to  claim 1 , wherein the second semiconductor gate layer is constituted of an Al x Ga 1-x N (0≤x<1) layer. 
     
     
       5. The nitride semiconductor device according to  claim 4 , wherein an Al composition of the second semiconductor gate layer is not less than 15%. 
     
     
       6. The nitride semiconductor device according to  claim 1 , wherein the second semiconductor gate layer contains a donor type impurity. 
     
     
       7. The nitride semiconductor device according to  claim 1 , wherein a film thickness of the first semiconductor gate layer is not less than 50 nm. 
     
     
       8. The nitride semiconductor device according to  claim 1 , wherein a film thickness of the first semiconductor gate layer is not less than 70 nm. 
     
     
       9. The nitride semiconductor device according to  claim 1 , wherein a film thickness of the second semiconductor gate layer is not less than 3 nm and not more than 15 nm. 
     
     
       10. The nitride semiconductor device according to  claim 1 , wherein a width of the second semiconductor gate layer is substantially equal to a width of the first semiconductor gate layer, the second semiconductor gate layer covers an entire front surface of the first semiconductor gate layer, the gate electrode is formed on a widthwise intermediate portion of a front surface of the second semiconductor gate layer, and the gate electrode does not contact a width direction end of the second semiconductor gate layer. 
     
     
       11. The nitride semiconductor device according to  claim 1 , wherein the gate electrode is constituted of TiN, TiW, or Ti or a combination of these. 
     
     
       12. The nitride semiconductor device according to  claim 1 , wherein the gate electrode contains two or more combinations of TiN that differ in composition ratio. 
     
     
       13. The nitride semiconductor device according to  claim 1 , further comprising:
 a dielectric film that covers an exposed surface of the second nitride semiconductor layer and the gate portion; and 
 a source electrode that is disposed on the dielectric film to cover the gate portion, 
 wherein, in a region between the gate portion and the drain electrode, the source electrode includes:
 a first portion that extends perpendicularly to a surface of the second nitride semiconductor layer along a side of the gate electrode through the dielectric film, 
 a second portion that extends downward from a lower portion of the first portion along a side of the first semiconductor gate layer through the dielectric film, and 
 a third portion that is continuous with the second portion and extends in a direction parallel to the surface of the second nitride semiconductor layer. 
 
 
     
     
       14. A nitride semiconductor device comprising:
 a first nitride semiconductor layer that constitutes an electron transit layer; 
 a second nitride semiconductor layer that is formed on the first nitride semiconductor layer, is larger in bandgap than the first nitride semiconductor layer, and constitutes an electron supply layer; and 
 a gate portion that is formed on the second nitride semiconductor layer, 
 wherein the gate portion includes
 a first semiconductor gate layer of a ridge shape that is disposed on the second nitride semiconductor layer and is constituted of a nitride semiconductor containing an acceptor type impurity, 
 a second semiconductor gate layer that is formed on the first semiconductor gate layer and is constituted of a nitride semiconductor with a larger bandgap than the first semiconductor gate layer, and 
 a gate electrode that is formed on the second semiconductor gate layer and is in Schottky junction with the second semiconductor gate layer, and 
 
 wherein the second nitride semiconductor layer is constituted of an AlGaN layer, the first semiconductor gate layer is constituted of a p type GaN layer, the second semiconductor gate layer is constituted of an AlGaN layer, 
 wherein a third nitride semiconductor layer is formed on the second nitride semiconductor layer, 
 wherein the gate portion is formed on the third nitride semiconductor layer, and 
 wherein a removed portion in which a portion of the third nitride semiconductor layer is removed is formed in a region between the gate portion and a drain electrode. 
 
     
     
       15. The nitride semiconductor device according to  claim 14 , further comprising:
 a dielectric film that covers an exposed surface of the second nitride semiconductor layer and the gate portion; and 
 a source electrode that is disposed on the dielectric film to cover the gate portion, 
 wherein, in a region between the gate portion and the drain electrode, the source electrode includes:
 a first portion that extends perpendicularly to a surface of the second nitride semiconductor layer along a side of the gate electrode through the dielectric film, 
 a second portion that extends downward from a lower end of the first portion along a side of the first semiconductor gate layer through the dielectric film, and 
 a third portion that is continuous with the second portion and extends in a direction parallel to the surface of the second nitride semiconductor layer. 
 
 
     
     
       16. A nitride semiconductor device comprising:
 a first nitride semiconductor layer that constitutes an electron transit layer; 
 a second nitride semiconductor layer that is formed on the first nitride semiconductor layer, is larger in bandgap than the first nitride semiconductor layer, and constitutes an electron supply layer; and 
 a gate portion that is formed on the second nitride semiconductor layer, 
 wherein the gate portion includes
 a first semiconductor gate layer of a ridge shape that is disposed on the second nitride semiconductor layer and is constituted of a nitride semiconductor containing an acceptor type impurity, 
 a second semiconductor gate layer that is formed on the first semiconductor gate layer and is constituted of a nitride semiconductor with a larger bandgap than the first semiconductor gate layer, and 
 a gate electrode that is formed on the second semiconductor gate layer and is in Schottky junction with the second semiconductor gate layer, and 
 
 wherein the gate electrode contains two or more combinations of TiN that differ in composition ratio.