μ-LED, μ-LED device, display and method for the same

Abstract

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

The invention claimed is: 
     
       1. A method of producing an optoelectronic component including a μ-LED, comprising:
 providing a semiconductor structure based on a phosphide material system comprising a first n-doped layer, a second p-doped layer, and an active layer with at least one quantum well disposed therebetween, wherein the p-doped layer comprises a first dopant; 
 applying a patterned mask on the semiconductor structure; 
 providing a second dopant; 
 diffusing, using first process parameters and during a first time period and at a first temperature, the second dopant into the p-doped layer in areas of the active layer over which no area of the patterned mask is located, such that quantum well intermixing is generated in the areas; and 
 annealing with second process parameters different from the first process parameters, at a second temperature higher than the first temperature during a subsequent second time period, without further addition of the second dopant, wherein the step of annealing comprises:
 providing a phosphide precursor during the second time period and at the second temperature. 
 
 
     
     
       2. The method according to  claim 1 , wherein the second dopant comprises Zn and comprises the same doping type as the first dopant. 
     
     
       3. The method according to  claim 1 , wherein the second process parameters comprise a temperature greater than the first temperature of the first process parameters. 
     
     
       4. The method according to  claim 1 , wherein the first and/or second process parameters are selected from at least one element of the group consisting of:
 temperature; 
 temperature change over a defined period; 
 pressure; 
 pressure change over a defined period of time; 
 composition of a gas; 
 duration; and 
 a combination of the above, 
 wherein the first process parameters differ from the second process parameters in at least one parameter other than the duration. 
 
     
     
       5. The method according to  claim 1 , wherein the mask is formed locally from a suitable layer of the semiconductor structure by a patterning step. 
     
     
       6. The method according to  claim 1 , wherein the annealing further comprises adding a precursor comprising an element including P or As. 
     
     
       7. The method according to  claim 1 , wherein the second dopant comprises Zn or Mg. 
     
     
       8. The method according to  claim 1 , wherein the semiconductor structure comprises a III-V semiconductor material having at least one of the following material systems:
 InP; 
 GaP; 
 InGaP; 
 InAlP; 
 GaAlP; and 
 InGaAlP.