Semiconductor device and method for manufacturing semiconductor device

Abstract

A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

The invention claimed is: 
     
       1. A semiconductor device comprising:
 a glass substrate; 
 a first insulating film over the glass substrate; 
 an oxide semiconductor film over the first insulating film; 
 a source electrode and a drain electrode over and electrically connected to the oxide semiconductor film; 
 a second insulating film over the source electrode and the drain electrode; 
 a third insulating film over the second insulating film; and 
 a gate electrode over the oxide semiconductor film, 
 wherein the source electrode has a stacked structure comprising a first conductive film, a second conductive film over the first conductive film, and a third conductive film over the second conductive film, 
 wherein the drain electrode has a stacked structure comprising a fourth conductive film, a fifth conductive film over the fourth conductive film, and a sixth conductive film over the fifth conductive film, and 
 wherein the second insulating film comprises a plurality of void regions. 
 
     
     
       2. A semiconductor device comprising:
 a substrate; 
 a first insulating film over the substrate; 
 an oxide semiconductor film over the first insulating film; 
 a source electrode and a drain electrode over and electrically connected to the oxide semiconductor film; 
 a second insulating film over the source electrode and the drain electrode; 
 a third insulating film over the second insulating film; and 
 a gate electrode over the oxide semiconductor film, 
 wherein the source electrode has a stacked structure comprising a first conductive film, a second conductive film over the first conductive film, and a third conductive film over the second conductive film, 
 wherein the drain electrode has a stacked structure comprising a fourth conductive film, a fifth conductive film over the fourth conductive film, and a sixth conductive film over the fifth conductive film, and 
 wherein the second insulating film comprises a plurality of void regions. 
 
     
     
       3. A semiconductor device comprising:
 a substrate; 
 a first insulating film over the substrate; 
 an oxide semiconductor film over the first insulating film; 
 a source electrode and a drain electrode over and electrically connected to the oxide semiconductor film; 
 a second insulating film over the source electrode and the drain electrode; 
 a third insulating film over the second insulating film; and 
 a gate electrode over the oxide semiconductor film, 
 wherein the second insulating film comprises a void region. 
 
     
     
       4. The semiconductor device according to  claim 1 ,
 wherein the oxide semiconductor film comprises indium, gallium, and zinc, and 
 wherein the oxide semiconductor film comprises a nanocrystal having a size greater than or equal to 1 nm and less than 10 nm. 
 
     
     
       5. The semiconductor device according to  claim 2 ,
 wherein the oxide semiconductor film comprises indium, gallium, and zinc, and 
 wherein the oxide semiconductor film comprises a nanocrystal having a size greater than or equal to 1 nm and less than 10 nm. 
 
     
     
       6. The semiconductor device according to  claim 3 ,
 wherein the oxide semiconductor film comprises indium, gallium, and zinc, and 
 wherein the oxide semiconductor film comprises a nanocrystal having a size greater than or equal to 1 nm and less than 10 nm. 
 
     
     
       7. The semiconductor device according to  claim 1 ,
 wherein the second insulating film comprises silicon and nitrogen, and 
 wherein the third insulating film does not comprise a void region. 
 
     
     
       8. The semiconductor device according to  claim 2 ,
 wherein the second insulating film comprises silicon and nitrogen, and 
 wherein the third insulating film does not comprise a void region. 
 
     
     
       9. The semiconductor device according to  claim 3 ,
 wherein the second insulating film comprises silicon and nitrogen, and 
 wherein the third insulating film does not comprise a void region. 
 
     
     
       10. The semiconductor device according to  claim 1 ,
 wherein one of the plurality of void regions overlaps with one of the source electrode and the drain electrode and the oxide semiconductor film. 
 
     
     
       11. The semiconductor device according to  claim 2 ,
 wherein one of the plurality of void regions overlaps with one of the source electrode and the drain electrode and the oxide semiconductor film. 
 
     
     
       12. The semiconductor device according to  claim 3 ,
 wherein the void region overlaps with one of the source electrode and the drain electrode and the oxide semiconductor film. 
 
     
     
       13. The semiconductor device according to  claim 1 ,
 wherein one of the plurality of void regions overlaps with one of the source electrode and the drain electrode and the oxide semiconductor film in a region where the one of the source electrode and the drain electrode is in contact with the oxide semiconductor film. 
 
     
     
       14. The semiconductor device according to  claim 2 ,
 wherein one of the plurality of void regions overlaps with one of the source electrode and the drain electrode and the oxide semiconductor film in a region where the one of the source electrode and the drain electrode is in contact with the oxide semiconductor film. 
 
     
     
       15. The semiconductor device according to  claim 3 ,
 wherein the void region overlaps with one of the source electrode and the drain electrode and the oxide semiconductor film in a region where the one of the source electrode and the drain electrode is in contact with the oxide semiconductor film. 
 
     
     
       16. The semiconductor device according to  claim 1 ,
 wherein one of the plurality of void regions is present in a step region formed by one of the source electrode and the drain electrode. 
 
     
     
       17. The semiconductor device according to  claim 2 ,
 wherein one of the plurality of void regions is present in a step region formed by one of the source electrode and the drain electrode. 
 
     
     
       18. The semiconductor device according to  claim 3 ,
 wherein the void region is present in a step region formed by one of the source electrode and the drain electrode.