US12251786B2ActiveUtilityA1
Filter apparatus for semiconductor device fabrication process
Assignee: TAIWAN SEMICONDUCTOR MFG CO LTDPriority: May 22, 2020Filed: Nov 19, 2020Granted: Mar 18, 2025
Est. expiryMay 22, 2040(~13.9 yrs left)· nominal 20-yr term from priority
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50
PatentIndex Score
0
Cited by
30
References
20
Claims
Abstract
A filter device includes one or more filter membranes, and a filter housing enclosing the one or more filter membranes. Each of the filter membranes includes a base membrane made of a ceramic material, and a plurality of through holes. The base membrane is coated with a coating material.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. A filter device used in an apparatus for manufacturing a semiconductor device, comprising:
one or more filter membranes; and
a filter housing enclosing the one or more filter membranes,
wherein each of the one or more filter membranes includes a base membrane made of a ceramic material, and a plurality of through holes,
the base membrane is coated with a coating material,
an average diameter of the plurality of through holes is in a range from 10 nm to 500 nm, and
a variation of diameters of the plurality of through holes is in a range from 5% to 25% of the average diameter.
2. The filter device of claim 1 , wherein the average diameter of the plurality of through holes is in a range from 50 nm to 200 nm.
3. The filter device of claim 2 , wherein the variation of diameters of the plurality of through holes is in a range from 10% to 20% of the average diameter.
4. The filter device of claim 1 , wherein a thickness of the base membrane is in a range from 50 nm to 500 nm.
5. The filter device of claim 1 , wherein an aspect ratio of the plurality of through holes is in a range from 2 to 10.
6. The filter device of claim 1 , wherein the coating material includes one or more of a PE (polyethylene), a PTFE (polytetrafluoroethylene), a PVDF (polyvinylidene fluoride), a PFA (polyfluoroalkoxy), a HDPE (high density polyethylene), a PAS (polyarylsulfone), a PES (polyether sulfone), a PS (polysulfone), a PP (polyproplyene) and a PEEK (polyetheretherketone), or derivatives thereof.
7. The filter device of claim 1 , wherein the ceramic material is anodic aluminum oxide.
8. The filter device of claim 1 , wherein a total number of the plurality of through holes per square micron is in a range from 100 to 600.
9. The filter device of claim 1 , wherein the one or more filter membranes comprises two or more filter membranes having different average hole sizes from each other.
10. The filter device of claim 9 , wherein:
the filter housing includes an inlet and an outlet, and
a filter membrane of the two or more filter membranes having a larger average hole size is located closer to the inlet than a filter membrane of the two or more filter membranes having a smaller average hole size.
11. A liquid supplying system comprising:
a semiconductor wafer processing apparatus;
a liquid tank configured to store a liquid for manufacturing a semiconductor device;
a liquid supply system for supplying the liquid from the liquid tank to the semiconductor wafer processing apparatus; and
a point-of-use (POU) filter device disposed on the liquid supply system,
wherein the POU filter device includes:
one or more filter membranes; and
a filter housing enclosing the one or more filter membranes,
each of the filter membranes includes a base membrane made of anodic aluminum oxide, and a plurality of through holes,
the base membrane is coated with a coating material,
an average diameter of the plurality of through holes is in a range from 10 nm to 500 nm, and
a variation of diameters of the plurality of through holes is in a range from 5% to 25% of the average diameter.
12. The liquid supplying system of claim 11 , wherein the average diameter of the plurality of through holes is in a range from 50 nm to 200 nm.
13. The liquid supplying system of claim 12 , wherein the variation of diameters of the plurality of through holes is in a range from 10% to 20% of the average diameter.
14. The liquid supplying system of claim 11 , wherein a thickness of the base membrane is in a range from 50 nm to 500 nm.
15. The liquid supplying system of claim 11 , wherein the coating material includes one or more of a PE (polyethylene), a PTFE (polytetrafluoroethylene), a PVDF (polyvinylidene fluoride), a PFA (polyfluoroalkoxy), a HDPE (high density polyethylene), a PAS (polyarylsulfone), a PES (polyether sulfone), a PS (polysulfone), a PP (polyproplyene) and a PEEK (polyetheretherketone), or derivatives thereof.
16. The liquid supplying system of claim 11 , wherein the semiconductor wafer processing apparatus is a chemical mechanical polishing (CMP) apparatus, and the liquid is a CMP slurry.
17. The liquid supplying system of claim 11 , further comprising a circulation path for circulating the liquid from the liquid tank to the liquid tank,
wherein the circulation path includes another filter device.
18. A method of cleaning a filter device, comprising:
determining whether the filter device is to be cleaned or not; and
after determining that the filter device is to be cleaned, flowing a cleaning solution through the filter device in a reverse direction,
wherein the filter device includes:
a filter membrane; and
a filter housing enclosing the filter membrane,
the filter membrane includes a base membrane made of anodic aluminum oxide, and a plurality of through holes,
the base membrane is coated with a coating material,
an average diameter of the plurality of through holes is in a range from 10 nm to 500 nm, and
a variation of diameters of the plurality of through holes is in a range from 5% to 25% of the average diameter.
19. The method of claim 18 , wherein the determining comprises:
monitoring a flow rate of a liquid passing through the filter device; and
determining whether the flow rate is below a threshold rate.
20. The method of claim 18 , wherein the cleaning solution is water or an organic solvent.Cited by (0)
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