US12259603B2ActiveUtilityA1

Thermally tuned optical devices containing chalcogenide thin films

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Assignee: US GOV SEC NAVYPriority: Sep 29, 2020Filed: Sep 29, 2021Granted: Mar 25, 2025
Est. expirySep 29, 2040(~14.2 yrs left)· nominal 20-yr term from priority
H10P 14/3436G02F 2202/30G02B 1/10G02F 1/0147H01L 21/02568
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Cited by
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References
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Claims

Abstract

Tunable devices and methods for fine tuning the optical responses of thin film devices post fabrication are described. This approach modifies the refractive indices of the chalcogenide glass thin films incorporated into the devices, and using this change in the refractive indices to fine tune the optical responses of the devices. Thermal annealing may be used to modify the refractive index. Thermal annealing provides good uniformity in large-area devices and may be applied to multi-layer structures.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. An optical reflector device comprising:
 a substrate; 
 a first reflector layer on the substrate; 
 a chalcogenide glass layer on the first reflector layer so that the first reflector layer is between the chalcogenide glass layer and the substrate; and 
 a second reflector layer on the chalcogenide glass layer so that the chalcogenide glass layer is between the first reflector layer and the second reflector layer; 
 wherein at least one of the first reflector layer and the second reflector layer comprises a dielectric stack, and wherein the chalcogenide glass layer has an optical index of refraction that is configured to be thermally tuned while physically between the first and second reflector layers post deposition to adjust a wavelength response of the optical reflector device. 
 
     
     
       2. The optical reflector device of  claim 1 , wherein the chalcogenide glass layer comprises at least one chalcogen element that includes sulfur, selenium, or tellurium. 
     
     
       3. The optical reflector device of  claim 1 , wherein the chalcogenide glass layer comprises at least one network former that includes gallium, germanium, arsenic, indium, antimony, or lead. 
     
     
       4. The optical reflector device of  claim 1 , wherein the chalcogenide glass layer comprises a halide. 
     
     
       5. The optical reflector device of  claim 1 , the optical reflector device being configured to operate in a range that includes visible through long range infrared wavelengths. 
     
     
       6. The optical reflector device of  claim 1 , wherein the optical device is configured to be a filter, and
 wherein the chalcogenide glass comprises arsenic selenide and the substrate comprises sapphire. 
 
     
     
       7. The optical reflector device of  claim 1 , wherein the chalcogenide glass layer is in a non-equilibrium state.

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