Light emitting element, method of manufacturing the same, and display device including the light emitting element

Abstract

A light emitting element includes: a light emitting stack pattern including a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked along one direction; and an insulating film surrounding an outer surface of at least one of the first semiconductor layer, the active layer, and the second semiconductor layer. The insulating film including a zinc oxide (ZnO) thin film layer.

What is claimed is: 
     
       1. A method of manufacturing a light emitting element, the method comprising:
 forming a light emitting stack structure by sequentially stacking a first semiconductor layer, an active layer, a second semiconductor layer, and an additional electrode on a substrate; 
 forming at least one light emitting stack pattern by etching the light emitting stack structure in a vertical direction, and exposing one region of the first semiconductor layer to the outside; 
 coating an insulating material layer made of a zinc acetate solution on the light emitting stack pattern by using a wet chemical process and drying the coated insulating material layer; 
 forming an insulating film surrounding an outer surface of the light emitting stack pattern by etching the dried insulating material layer in the vertical direction; and 
 forming the light emitting element by separating the light emitting stack pattern surrounded by the insulating film from the substrate. 
 
     
     
       2. The method of  claim 1 , wherein the insulating film is doped with at least one of Group III transition metals including yttrium (Y), scandium (Sc), lanthanum (La), actinium (Ac), lutetium (Lu), and lawrencium (Lr). 
     
     
       3. The method of  claim 1 , further comprising forming a protective film surrounding an outer surface of the insulating film, after the insulating film is formed,
 wherein the protective film comprises an inorganic material.