Transparent conductive film, method of manufacturing same, thin film transistor, and device including same

Abstract

A transparent conductive film includes a metal chalcogenide compound doped with a halogen and having a sheet resistance at room temperature of less than or equal to about 60 ohm/sq.

What is claimed is: 
     
       1. A transparent conductive film, comprising
 a metal chalcogenide compound doped with a halogen, 
 wherein the transparent conductive film has a sheet resistance of less than or equal to about 60 ohm/sq. at a temperature of about 20° C. to about 25° C. 
 
     
     
       2. The transparent conductive film of  claim 1 , wherein
 the metal chalcogenide compound is represented by Chemical Formula 1:
   M x X y   [Chemical Formula 1]
 
 
 wherein, in Chemical Formula 1, M is a transition metal, an alkali metal, an alkaline earth metal, or any combination thereof, X is S, Se, Te, or any combination thereof, and x and y have respective values corresponding to a stoichiometric ratio of M and X. 
 
     
     
       3. The transparent conductive film of  claim 2 , wherein
 in Chemical Formula 1, M is Cu, Fe, Zn, Co, Mo, W, Li, or any combination thereof. 
 
     
     
       4. The transparent conductive film of  claim 1 , wherein
 the halogen is fluorine, chlorine, bromine, iodine, or any combination thereof. 
 
     
     
       5. The transparent conductive film of  claim 1 , wherein
 a content of the halogen in the transparent conductive film is in a range of about 0.30 atomic % to about 0.70 atomic % based on a total number of atoms of the transparent conductive film. 
 
     
     
       6. The transparent conductive film of  claim 1 , wherein
 the transparent conductive film is configured to exhibit a light transmittance of incident light of greater than or equal to about 80% in a wavelength region of about 550 nm or more. 
 
     
     
       7. The transparent conductive film of  claim 1 , wherein
 the transparent conductive film is configured to exhibit a sheet resistance increase rate of less than or equal to about 20% after 10000 repetitions of bending with a radius of curvature of 4 mm or less. 
 
     
     
       8. The transparent conductive film of  claim 1 , wherein
 A carrier density of the transparent conductive film is greater than or equal to about 1.0×10 21  cm −3 . 
 
     
     
       9. The transparent conductive film of  claim 1 , wherein
 a work function of the metal chalcogenide compound doped with the halogen of the transparent conductive film is greater than or equal to about 5.2 eV. 
 
     
     
       10. The transparent conductive film of  claim 1 , wherein
 the transparent conductive film does not include any organic material. 
 
     
     
       11. A method of manufacturing a transparent conductive film, the method comprising:
 exposing a metal film to a chalcogen element-containing material to prepare a film including a metal chalcogenide compound; and 
 exposing the film including the metal chalcogenide compound to a halogen element-containing material to produce a transparent conductive film including a metal chalcogenide compound doped with a halogen of  claim 1 . 
 
     
     
       12. The method of  claim 11 , wherein
 the exposing the metal film to the chalcogen element-containing material exposes the metal film to the chalcogen element-containing material for about 10 seconds to about 50 seconds. 
 
     
     
       13. The method of  claim 11 , wherein
 the exposing the film including the metal chalcogenide compound to the halogen element-containing material exposes the film including the metal chalcogenide compound to the halogen element-containing material for about 10 seconds to about 50 seconds. 
 
     
     
       14. The method of  claim 11 , further comprising:
 heat-treating the transparent conductive film including the metal chalcogenide compound doped with the halogen. 
 
     
     
       15. The method of  claim 14 , wherein
 the heat-treating is performed at about 250° C. or less. 
 
     
     
       16. A thin film transistor comprising the transparent conductive film of  claim 1 . 
     
     
       17. The thin film transistor of  claim 16 , wherein
 the thin film transistor includes a semiconductor thin film, a gate electrode at least partially overlapped with the semiconductor thin film, and a source electrode and a drain electrode electrically connected to the semiconductor thin film, and 
 the source electrode and the drain electrode include the transparent conductive film. 
 
     
     
       18. A device comprising the transparent conductive film of  claim 1 . 
     
     
       19. A transparent conductive film, comprising:
 a metal chalcogenide compound doped with a halogen, 
 wherein the metal chalcogenide compound is represented by Chemical Formula 1:
   M x X y   [Chemical Formula 1]
 
 
 wherein, in Chemical Formula 1,
 M is a transition metal, an alkali metal, an alkaline earth metal, or any combination thereof, 
 X is S, Se, Te, or any combination thereof, and 
 x and y have respective values corresponding to a stoichiometric ratio of M and X, 
 
 wherein a content of the halogen in the transparent conductive film is in a range of about 0.30 atomic % to about 0.70 atomic % based on a total number of atoms of the transparent conductive film. 
 
     
     
       20. A thin film transistor, comprising:
 a semiconductor thin film, a gate electrode at least partially overlapped with the semiconductor thin film, and a source electrode and a drain electrode electrically connected to the semiconductor thin film, 
 wherein the source electrode and the drain electrode include a first metal chalcogenide compound, 
 wherein the semiconductor thin film includes a second metal chalcogenide compound, and 
 wherein the first metal chalcogenide compound and the second metal chalcogenide compound are doped with a halogen.