Solid-state imaging apparatus and electronic apparatus

Abstract

A solid-state imaging apparatus includes a pixel array in which a plurality of pixels are two-dimensionally arranged, wherein each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter. One photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts light in a visible light region, the other photoelectric conversion region photoelectrically converts light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric conversion region formed below the first filter the same.

The invention claimed is: 
     
       1. A light detecting device, comprising:
 a photoelectric conversion layer disposed above a semiconductor layer and configured to photoelectrically covert light in a visible light region; 
 a photodiode disposed in the semiconductor layer and configured to photoelectrically convert light in an infrared region which transmits through the photoelectric conversion layer; and 
 a charge holding part disposed in the semiconductor layer and electrically coupled to the photoelectric conversion layer. 
 
     
     
       2. The light detecting device according to  claim 1 , wherein the charge holding part is disposed at a first surface of the semiconductor layer which is opposed to a second surface of the semiconductor layer, the second surface of the semiconductor layer being between the photoelectric conversion layer and the first surface of the semiconductor layer. 
     
     
       3. The light detecting device according to  claim 1 , wherein the semiconductor layer includes silicon. 
     
     
       4. The light detecting device according to  claim 2 , wherein the charge holding part is coupled to the photoelectric conversion layer via a transparent electrode. 
     
     
       5. The light detecting device according to  claim 4 , wherein the transparent electrode is provided at the second surface of the semiconductor layer. 
     
     
       6. The light detecting device according to  claim 4 , wherein an electrode is coupled between the transparent electrode and the charge holding part. 
     
     
       7. The light detecting device according to  claim 4 , wherein the photodiode is provided between the transparent electrode and the charge holding part. 
     
     
       8. The light detecting device according to  claim 1 , wherein the photoelectric conversion layer comprises an organic photoelectric conversion layer. 
     
     
       9. The light detecting device according to  claim 8 , wherein the organic photoelectric conversion layer employs a bulk-hetero structure using poly(3-hexylthiophene-2,5-diyl) (P3HT) or Phenyl-C61-Butyric-Acid-Methyl-Ester (PCBM). 
     
     
       10. The light detecting device according to  claim 2 , further comprising a wiring layer, wherein the wiring layer is provided at the first surface of semiconductor layer opposite the charge holding part. 
     
     
       11. An electronic apparatus, comprising:
 a light detecting device comprising:
 a photoelectric conversion layer disposed above a semiconductor layer and configured to photoelectrically covert light in a visible light region; 
 a photodiode disposed in the semiconductor layer and configured to photoelectrically convert light in an infrared region which transmits through the photoelectric conversion layer; and 
 a charge holding part disposed in the semiconductor layer and electrically coupled to the photoelectric conversion layer; and 
 
 a digital signal processor. 
 
     
     
       12. The electronic apparatus according to  claim 11 , wherein the charge holding part is disposed at a first surface of the semiconductor layer which is opposed to a second surface of the semiconductor layer, the second surface of the semiconductor layer being between the photoelectric conversion layer and the first surface of the semiconductor layer. 
     
     
       13. The electronic apparatus according to  claim 11 , wherein the semiconductor layer includes silicon. 
     
     
       14. The electronic apparatus according to  claim 12 , wherein the charge holding part is coupled to the photoelectric conversion layer via a transparent electrode. 
     
     
       15. The electronic apparatus according to  claim 14 , wherein the transparent electrode is provided at the second surface of the semiconductor layer. 
     
     
       16. The electronic apparatus according to  claim 14 , wherein an electrode is coupled between the transparent electrode and the charge holding part. 
     
     
       17. The electronic apparatus according to  claim 14 , wherein the photodiode is provided between the transparent electrode and the charge holding part. 
     
     
       18. The electronic apparatus according to  claim 11 , wherein the photoelectric conversion layer comprises an organic photoelectric conversion layer. 
     
     
       19. The electronic apparatus according to  claim 18 , wherein the organic photoelectric conversion layer employs a bulk-hetero structure using poly(3-hexylthiophene-2,5-diyl) (P3HT) or Phenyl-C61-Butyric-Acid-Methyl-Ester (PCBM). 
     
     
       20. The electronic apparatus according to  claim 12 , further comprising a wiring layer, wherein the wiring layer is provided at the first surface of semiconductor layer opposite the charge holding part.