Electronic device

Abstract

An electronic device includes a substrate, a first silicon transistor, a second silicon transistor and a first oxide semiconductor transistor. The first silicon transistor, the second silicon transistor and the first oxide semiconductor transistor are disposed on the substrate. The first silicon transistor has a first terminal electrically connected to a first voltage level, a second terminal and a control terminal. The second silicon transistor has a first terminal electrically connected to the second terminal of the first silicon transistor, a second terminal electrically connected to a second voltage level, and a control terminal electrically connected to the control terminal of the first silicon transistor. The first oxide semiconductor transistor has a first terminal electrically connected to the first terminal of the second silicon transistor. Wherein, a voltage value of the first voltage level is greater than a voltage value of the second voltage level.

What is claimed is: 
     
       1. An electronic device, comprising:
 a substrate; 
 a first silicon transistor disposed on the substrate and having a first terminal electrically connected to a first voltage level, a second terminal and a control terminal; 
 a second silicon transistor disposed on the substrate and having a first terminal electrically connected to the second terminal of the first silicon transistor, a second terminal electrically connected to a second voltage level, and a control terminal electrically connected to the control terminal of the first silicon transistor; and 
 a first oxide semiconductor transistor disposed on the substrate and having a first terminal electrically connected to the first terminal of the second silicon transistor, 
 wherein a voltage value of the first voltage level is greater than a voltage value of the second voltage level. 
 
     
     
       2. The electronic device as claimed in  claim 1 , wherein a first current flows from the second terminal of the first silicon transistor to the first terminal of the first oxide semiconductor transistor. 
     
     
       3. The electronic device as claimed in  claim 1 , further comprising a third silicon transistor having a first terminal electrically connected to the second terminal of the first silicon transistor. 
     
     
       4. The electronic device as claimed in  claim 3 , wherein the third silicon transistor has a second terminal electrically connected to the first terminal of the second silicon transistor. 
     
     
       5. The electronic device as claimed in  claim 3 , wherein the third silicon transistor has a control terminal electrically connected to a second terminal of the first oxide semiconductor transistor. 
     
     
       6. The electronic device as claimed in  claim 3 , further comprising a second oxide semiconductor transistor having a first terminal electrically connected to a control terminal of the third silicon transistor. 
     
     
       7. The electronic device as claimed in  claim 1 , further comprising a second oxide semiconductor transistor having a first terminal electrically connected to a second terminal of the first oxide semiconductor transistor. 
     
     
       8. The electronic device as claimed in  claim 7 , further comprising a third silicon transistor having a control terminal electrically connected to the second terminal of the first oxide semiconductor transistor and the first terminal of the second oxide semiconductor transistor. 
     
     
       9. The electronic device as claimed in  claim 1 , further comprising a fourth silicon transistor having a first terminal electrically connected to the second terminal of the first silicon transistor. 
     
     
       10. The electronic device as claimed in  claim 9 , wherein the fourth silicon transistor has a second terminal electrically connected to a data line.