Short-circuit switching device including at least one pyrotechnic ignition device

Abstract

A short-circuit switching device, in particular a bypass switch, includes a semiconductor element with at least one p-n junction and at least one pyrotechnic ignition device. The semiconductor element is or at least can be in a blocking state prior to the ignition of the pyrotechnic ignition device on the basis of the involvement of the p-n junction. After the ignition of the pyrotechnic ignition device, the semiconductor element is at least partially destroyed, namely at least with respect to the at least one p-n junction, and made at least partially conductive independently of the current flow direction by using explosion gas released by the ignition device after an explosion.

The invention claimed is: 
     
       1. A short-circuit switching device or bypass switch, comprising:
 a semiconductor element having at least one p-n junction; and 
 at least one pyrotechnic ignition device; 
 said semiconductor element being in a blocking state or at least being configured to be in a blocking state, prior to an ignition of said pyrotechnic ignition device based on an involvement of said p-n junction; and 
 said semiconductor element being at least partially destroyed, at least with respect to said at least one p-n junction, after the ignition of said pyrotechnic ignition device, and said semiconductor element being made at least partially conductive regardless of a current flow direction, due to explosion gas released by said ignition device after an explosion. 
 
     
     
       2. The short-circuit switching device according to  claim 1 , which further comprises:
 an anode and a cathode; 
 said semiconductor element having first and second n-doped semiconductor regions, said second n-doped semiconductor region being connected to said cathode or forming said cathode; 
 said semiconductor element having first and second p-doped semiconductor regions, said first p-doped semiconductor region being connected to said anode or forming said anode; 
 said first and second n-doped semiconductor regions and said first and second p-doped semiconductor regions forming at least three p-n junctions electrically in series between said anode and said cathode; 
 said p-n junctions including a first p-n junction between said first p-doped semiconductor region and said first n-doped semiconductor region, a second p-n junction between said first n-doped semiconductor region and said second p-doped semiconductor region, and a third p-n junction between said second p-doped semiconductor region and said second n-doped semiconductor region; and 
 said pyrotechnic ignition device being disposed to destroy at least said third p-n junction resulting in making at least said third p-n junction conductive regardless of the current flow direction, due to the explosion gas released by said pyrotechnic ignition device after an explosion. 
 
     
     
       3. The short-circuit switching device according to  claim 2 , wherein said pyrotechnic ignition device is disposed to destroy at least said second and third p-n junctions resulting in making at least said second and third p-n junctions conductive regardless of the current flow direction, due to the explosion gas released by said pyrotechnic ignition device after an explosion. 
     
     
       4. The short-circuit switching device according to  claim 1 , wherein said semiconductor element is a semiconductor wafer having a first wafer side and a second wafer side opposite to said first wafer side. 
     
     
       5. The short-circuit switching device according to  claim 4 , wherein:
 said pyrotechnic ignition device has an explosive charge and a gas conduction duct disposed in parallel with a plane of said semiconductor wafer, said gas conduction duct conducting the explosion gas produced by said explosive charge in parallel in a direction of a center of said wafer; and 
 the explosion gas released after an explosion destroys at least said third p-n junction in a region of said center of said wafer and makes at least said third p-n junction conductive regardless of the current flow direction. 
 
     
     
       6. The short-circuit switching device according to  claim 5 , wherein the explosion gas released after an explosion also destroys said second p-n junction in said region of said center of said wafer and makes said second p-n junction conductive regardless of the current flow direction. 
     
     
       7. The short-circuit switching device according to  claim 1 , wherein said semiconductor element is a semiconductor wafer having:
 a first wafer side on which said first p-doped semiconductor region and said anode are disposed, and 
 a second wafer side on which said second n-doped semiconductor region and said cathode are disposed. 
 
     
     
       8. The short-circuit switching device according to  claim 7 , which further comprise:
 an electrode supported on one of said wafer sides and making electrical contact with said anode or said cathode; 
 said gas conduction duct of said pyrotechnic ignition device being formed by a duct-shaped cavity within said electrode or by a tube disposed within said duct-shaped cavity. 
 
     
     
       9. The short-circuit switching device according to  claim 1 , wherein said pyrotechnic ignition device directs the explosion gas released after an explosion toward a metallization applied to said semiconductor element or at least toward said metallization. 
     
     
       10. The short-circuit switching device according to  claim 1 , wherein said first and second n-doped semiconductor regions and said first and second p-doped semiconductor regions form a thyristor in which said second p-doped semiconductor region forms a gate region of said thyristor. 
     
     
       11. The short-circuit switching device according to  claim 4 , wherein said second p-doped semiconductor region extends in a direction of one of said two wafer sides and is contacted by a gate electrode applied to said wafer side. 
     
     
       12. The short-circuit switching device according to  claim 10 , wherein said pyrotechnic ignition device directs the explosion gas released after an explosion toward a gate electrode making contact with said gate region or at least toward said gate electrode. 
     
     
       13. An arrangement being at least one of a converter, a multilevel converter, a voltage stabilization device, a reactive power controller or a reactive power compensation system, the arrangement comprising:
 at least one module series circuit having at least two submodules connected electrically in series; 
 a control device for actuating said submodules; and 
 at least one short-circuit switching device according to  claim 1 . 
 
     
     
       14. The arrangement according to  claim 13 , wherein said submodules have outer connections, said at least one short-circuit switching device is a component part of one of said submodules, is connected in parallel with said outer connections and can short-circuit said outer connections. 
     
     
       15. A method for operating a short-circuit switching device or bypass switch, the method comprising:
 providing the short-circuit switching device with a semiconductor element having at least one p-n junction, and providing the short-circuit switching device with at least one pyrotechnic ignition device; 
 switching the semiconductor element to a blocking state prior to an ignition of the pyrotechnic ignition device based of an involvement of the at least one p-n junction; and 
 at least partially destroying the semiconductor element, at least with respect to the at least one p-n junction, by ignition of the pyrotechnic ignition device, and making the semiconductor element at least partially conductive regardless of a current flow direction by using explosion gas released by the ignition device after an explosion.