Methods of forming nanostructures utilizing self-assembled nucleic acids

Abstract

A method of forming a structure comprises forming a pattern of self-assembled nucleic acids over a material. The pattern of self-assembled nucleic acids is exposed to at least one repair enzyme to repair defects in the pattern. The repaired pattern of self-assembled nucleic acids is transferred to the material to form features therein. A method of decreasing defect density in self-assembled nucleic acids is also disclosed. Self-assembled nucleic acids exhibiting an initial defect density are formed over at least a portion of a material and the self-assembled nucleic acids are exposed to at least one repair enzyme to repair defects in the self-assembled nucleic acids. Additional methods are also disclosed.

What is claimed is: 
     
       1. A method of decreasing defect density in self-assembled nucleic acids, the method comprising:
 forming an initial pattern of self-assembled nucleic acids on a material, the initial pattern of self-assembled nucleic acid comprising one or more defects; 
 exposing the initial pattern of self-assembled nucleic acids to at least one enzyme to repair at least one of the one or more defects in the initial pattern of self-assembled nucleic acids; and 
 removing a portion of the material exposed through the repaired pattern of self-assembled nucleic acids. 
 
     
     
       2. The method of  claim 1 , wherein forming an initial pattern of self-assembled nucleic acids on a material comprises exposing the material to a solution of nucleic acids and repeating the exposing until a thickness of the initial pattern of self-assembled nucleic acids is achieved. 
     
     
       3. The method of  claim 1 , wherein exposing the initial pattern of self-assembled nucleic acids to at least one enzyme comprises selecting the at least one enzyme based on the one or more defects in the initial pattern of self-assembled nucleic acids. 
     
     
       4. The method of  claim 1 , wherein exposing the initial pattern of self-assembled nucleic acids to at least one enzyme comprises cleaving one or more of carbon-chlorine bonds, carbon-phosphorus bonds, and phosphorus-oxygen bonds in the initial pattern of self-assembled nucleic acids. 
     
     
       5. The method of  claim 1 , wherein exposing the initial pattern of self-assembled nucleic acids to at least one enzyme comprises exposing the initial pattern of self-assembled nucleic acids to one or more of a metallo-β-lactamase, a haloacid dehalogenase, and an Fe (II)/α-ketoglutarate-dependent dioxygenase. 
     
     
       6. The method of  claim 1 , wherein removing a portion of the material exposed through the repaired pattern of self-assembled nucleic acids comprises forming nanoscale features in the material. 
     
     
       7. A method of decreasing defect density in self-assembled nucleic acids, the method comprising:
 forming a pattern of self-assembled nucleic acids on a base material; 
 determining a defect density in the pattern of self-assembled nucleic acids; 
 exposing the pattern of self-assembled nucleic acids to at least one enzyme to repair at least one defect in the pattern of self-assembled nucleic acids; and 
 removing one or more materials exposed through the repaired pattern of self-assembled nucleic acids. 
 
     
     
       8. The method of  claim 7 , wherein exposing the pattern of self-assembled nucleic acids to at least one enzyme comprises exposing the pattern of self-assembled nucleic acids to one or more of β-lactamase, oxidoreductase (rubredoxin/oxygen, ROO), glyoxalase II, artemis/DNA nuclease, haloacid dehalogenase, phosphonatase, Ca 2+ -ATpase, DNA 3′-phosphatase, clavimate synthase, isopenicillin synthase, taurine dioxygenase, or AlkB. 
     
     
       9. The method of  claim 7 , wherein exposing the pattern of self-assembled nucleic acids to at least one enzyme comprises selecting the at least one enzyme based on the defect density in the pattern of self-assembled nucleic acids. 
     
     
       10. The method of  claim 7 , wherein exposing the pattern of self-assembled nucleic acids to at least one enzyme comprises selecting the at least one enzyme to selectively repair defects in the pattern of self-assembled nucleic acids. 
     
     
       11. The method of  claim 7 , wherein removing one or more materials exposed through the repaired pattern of self-assembled nucleic acids comprises forming a pattern of features in the one or more materials. 
     
     
       12. A method of forming a nanostructure, comprising:
 forming a self-assembled structure of nucleic acids on a base material; 
 determining the self-assembled structure of nucleic acids comprises at least one defect; 
 exposing the self-assembled structure of nucleic acids to at least one enzyme to repair the at least one defect in the self-assembled structure; and 
 transferring a pattern of the repaired self-assembled structure to one or more materials adjacent to the base material. 
 
     
     
       13. The method of  claim 12 , wherein exposing the self-assembled structure of nucleic acids to at least one enzyme comprises simultaneously exposing the self-assembled structure of nucleic acids to two or more enzymes. 
     
     
       14. The method of  claim 12 , wherein exposing the self-assembled structure of nucleic acids to at least one enzyme comprises consecutively exposing the self-assembled structure of nucleic acids to two or more enzymes. 
     
     
       15. The method of  claim 12 , wherein exposing the self-assembled structure of nucleic acids to at least one enzyme comprises repeatedly exposing the self-assembled structure of nucleic acids to the at least one enzyme to achieve a reduced level of the at least one defect in the self-assembled structure. 
     
     
       16. The method of  claim 12 , wherein transferring a pattern of the repaired self-assembled structure to one or more materials adjacent to the base material comprises forming one or more nanostructures in the one or more materials. 
     
     
       17. The method of  claim 16 , wherein transferring a pattern of the repaired self-assembled structure to one or more materials adjacent to the base material comprises forming the one or more nanostructures exhibiting a dimension of less than about 50 nm. 
     
     
       18. The method of  claim 12 , wherein transferring a pattern of the repaired self-assembled structure to one or more materials adjacent to the base material comprises forming silicon nanowires, gold nanoparticles, semiconductive quantum dots, or fluorescent quantum dots. 
     
     
       19. The method of  claim 12 , further comprising removing the self-assembled structure of nucleic acids from the one or more materials adjacent to the base material. 
     
     
       20. The method of  claim 19 , wherein removing the self-assembled structure of nucleic acids from the one or more materials adjacent to the base material comprises exposing the self-assembled structure of nucleic acids to heat or an acidic solution.