Light-emitting element and display device including the same

Abstract

A light-emitting element includes a core comprising a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and an emissive layer disposed between the first semiconductor layer and the second semiconductor layer, an interlayer dielectric film surrounding a side surface of the core, a first element insulating film surrounding an outer surface of the interlayer dielectric film, and a second element insulating film surrounding an outer surface of the first element insulating film. The interlayer dielectric film includes an oxide insulating material having a dielectric constant of about 10 or more, and the interlayer dielectric film has a thickness of less than or equal to about 5 nm.

What is claimed is: 
     
       1. A light-emitting element comprising:
 a core comprising:
 a first semiconductor layer; 
 a second semiconductor layer disposed on the first semiconductor layer; and 
 an emissive layer disposed between the first semiconductor layer and the second semiconductor layer; 
 
 an interlayer dielectric film surrounding a side surface of the core; 
 a first element insulating film surrounding an outer surface of the interlayer dielectric film; and 
 a second element insulating film surrounding an outer surface of the first element insulating film, wherein 
 the interlayer dielectric film comprises an oxide insulating material having a dielectric constant of about 10 or more, and 
 the interlayer dielectric film has a thickness of less than 5 nm. 
 
     
     
       2. The light-emitting element of  claim 1 , wherein
 the thickness of the interlayer dielectric film is smaller than a thickness of the first element insulating film, and 
 the thickness of the interlayer dielectric film is smaller than a thickness of the second element insulating film. 
 
     
     
       3. The light-emitting element of  claim 1 , wherein the interlayer dielectric film has a thickness of about 2 nm or less. 
     
     
       4. The light-emitting element of  claim 1 , wherein a thickness of the first element insulating film is smaller than a thickness of the second element insulating film. 
     
     
       5. The light-emitting element of  claim 4 , wherein a ratio of the thickness of the first element insulating film to the thickness of the second element insulating film is about 1:4. 
     
     
       6. The light-emitting element of  claim 1 , wherein the side surface of the core comprises at least one of a side surface of the first semiconductor layer, a side surface of the second semiconductor layer, and a side surface of the emissive layer. 
     
     
       7. The light-emitting element of  claim 1 , wherein a dielectric constant of the interlayer dielectric film is greater than a dielectric constant of the first element insulating film. 
     
     
       8. The light-emitting element of  claim 1 , wherein an etch rate of the first element insulating film with respect to an etchant is lower than an etch rate of the second element insulating film. 
     
     
       9. The light-emitting element of  claim 1 , wherein the interlayer dielectric film comprises at least one of hafnium silicon oxide (HfSiO x ), scandium oxide (Sc x O y ), hafnium oxide (HfO x ), zirconium oxide (ZrO x ), strontium oxide (SrO), yttrium oxide (Y x O y ), tantalum oxide (Ta x O y ), barium oxide (BaO), tungsten oxide WO x ), titanium oxide (TiO x ), and lanthanum oxide (La x O y ). 
     
     
       10. The light-emitting element of  claim 1 , wherein the first element insulating film comprises silicon oxide (SiO x ). 
     
     
       11. The light-emitting element of  claim 1 , wherein the second element insulating film comprises aluminum oxide (Al x O y ). 
     
     
       12. The light-emitting element of  claim 1 , wherein the core, the interlayer dielectric film, the first element insulating film, and the second element insulating film have a circular shape in a plan view. 
     
     
       13. The light-emitting element of  claim 1 , wherein a length of the core in a longitudinal direction is greater than a length of the interlayer dielectric film in the longitudinal direction. 
     
     
       14. The light-emitting element of  claim 1 , wherein a thin-film density of the first element insulating film is higher than a thin-film density of the second element insulating film. 
     
     
       15. A display device comprising:
 a first electrode and a second electrode disposed on a substrate and spaced apart from each other; 
 a light-emitting element disposed between the first electrode and the second electrode; and 
 an insulating layer disposed on the light-emitting element, wherein 
 the light-emitting element comprises:
 a core comprising:
 a first semiconductor layer; 
 a second semiconductor layer disposed on the first semiconductor layer; and 
 an emissive layer disposed between the first semiconductor layer and the second semiconductor layer; 
 
 an interlayer dielectric film surrounding a side surface of the core; 
 a first element insulating film surrounding an outer surface of the interlayer dielectric film; and 
 a second element insulating film surrounding an outer surface of the first element insulating film, 
 
 the insulating layer at least partially overlaps the interlayer dielectric film, the first element insulating film, and the second element insulating film in a thickness direction of the substrate, 
 the first semiconductor layer, the emissive layer, and the second semiconductor layer are sequentially arranged in a direction intersecting the thickness direction of the substrate, 
 the interlayer dielectric film comprises an oxide insulating material having a dielectric constant of about 10 or more, and 
 the interlayer dielectric film has a thickness of less than 5 nm. 
 
     
     
       16. The display device of  claim 15 , wherein
 a thickness of the interlayer dielectric film is smaller than a thickness of the first element insulating film, 
 the thickness of the interlayer dielectric film is smaller than a thickness of the second element insulating film, and 
 the thickness of the first element insulating film is smaller than the thickness of the second element insulating film. 
 
     
     
       17. The display device of  claim 15 , wherein the interlayer dielectric film comprises an oxide insulating material having a dielectric constant of about 10 or more. 
     
     
       18. The display device of  claim 15 , wherein the interlayer dielectric film has a thickness of less than or equal to about 5 nm. 
     
     
       19. The display device of  claim 15 , wherein
 the first electrode and the second electrode are spaced apart from each other in the direction intersecting the thickness direction of the substrate, and 
 a length of the light-emitting element in the direction intersecting the thickness direction of the substrate is greater than a shortest distance between the first electrode and the second electrode. 
 
     
     
       20. The display device of  claim 15 , wherein
 the second element insulating film comprises:
 a first portion overlapping the insulating layer in the thickness direction of the substrate and having a first thickness, and 
 a second portion offset from the insulating layer in the thickness direction of the substrate and having a second thickness, and 
 
 the first thickness is greater than the second thickness.