Method of forming mark on semiconductor device

Abstract

The present disclosure provides a method for manufacturing a semiconductor device having a mark. The method includes: providing a substrate including a device region and a peripheral region adjacent to the device region; forming an interconnect layer over the substrate; depositing a first dielectric layer on the interconnect layer; forming a redistribution layer (RDL) over the first dielectric layer in the device region; depositing a second dielectric layer on the RDL in the device region and the first dielectric layer in the device region and the peripheral region; and removing portions of the second dielectric layer, the first dielectric layer and the interconnect structure in the peripheral region to form the mark in the peripheral region.

What is claimed is: 
     
         1 . A method for manufacturing a semiconductor device having a mark, the method comprising:
 providing a substrate including a device region and a peripheral region adjacent to the device region;   forming an interconnect layer over the substrate;   depositing a first dielectric layer on the interconnect layer;   forming a redistribution layer (RDL) over the first dielectric layer in the device region;   depositing a second dielectric layer on the RDL in the device region and the first dielectric layer in the device region and the peripheral region; and   removing portions of the second dielectric layer, the first dielectric layer and the interconnect structure in the peripheral region to form the mark in the peripheral region.   
     
     
         2 . The method of  claim 1 , wherein the removal of the portions of the first dielectric layer, the second dielectric layer and the interconnect structure includes a laser drilling operation. 
     
     
         3 . The method of  claim 1 , wherein a thickness of the first dielectric layer is between about 9000 angstroms (Å) and about 15000 Å, a thickness of the second dielectric layer is between about 7000 Å and about 20000 Å, and a thickness of the RDL is between about 20000 Å and about 60000 Å. 
     
     
         4 . The method of  claim 1 , wherein the device region is substantially greater than the peripheral region. 
     
     
         5 . The method of  claim 1 , wherein the peripheral region has a width between about 7 millimeters (mm) and about 10 mm and a length between about 60 mm and about 65 mm. 
     
     
         6 . The method of  claim 1 , wherein the substrate has a notch in the peripheral region, and the mark is adjacent to the notch. 
     
     
         7 . The method of  claim 1 , wherein the mark extends to a top portion of the interconnect structure in the peripheral region. 
     
     
         8 . The method of  claim 1 , further comprising:
 forming a photoresist pattern on the first dielectric layer, wherein the photoresist pattern completely covers the first dielectric layer in the peripheral region and partially covers the first dielectric layer in the device region; and   removing the photoresist pattern after the formation of the RDL.   
     
     
         9 . A method for manufacturing a semiconductor device having a mark, the method comprising:
 providing a substrate defined with a device region and a peripheral region adjacent to the device region;   forming an interconnect layer over the substrate;   depositing a first dielectric layer on the interconnect structure;   forming a photoresist pattern on the first dielectric layer, wherein the first dielectric layer in the peripheral region is at least partially exposed through the photoresist pattern;   disposing a conductive material on the first dielectric layer exposed through the photoresist pattern to form a conductive feature over the first dielectric layer;   removing the photoresist pattern;   conformally forming a second dielectric layer on the conductive feature and the first dielectric layer exposed through the conductive feature; and   engraving portions of the conductive feature and the second dielectric layer in the peripheral region to form the mark in the peripheral region.   
     
     
         10 . The method of  claim 9 , wherein the first and second dielectric layers include oxide or nitride. 
     
     
         11 . The method of  claim 9 , wherein the forming of the photoresist pattern includes transferring a pattern of a single photomask to the photoresist pattern in the device region and the peripheral region. 
     
     
         12 . The method of  claim 9 , wherein the mark is disposed above the first dielectric layer and the interconnect layer. 
     
     
         13 . The method of  claim 9 , wherein the engraving is implemented by laser. 
     
     
         14 . The method of  claim 9 , wherein the mark includes a plurality of numbers or letters in the peripheral region. 
     
     
         15 . A method for manufacturing a semiconductor device having a mark, the method comprising:
 providing a substrate defined with a device region and a peripheral region adjacent to the device region;   forming an interconnect layer over the substrate;   depositing a first dielectric layer on the interconnect layer;   forming a first photoresist pattern on the first dielectric layer in the device region and a second photoresist pattern on the first dielectric layer in the peripheral region;   filling a conductive material into openings of the first and second photoresist patterns to form a first conductive pattern in the device region and a second conductive pattern in the peripheral region;   removing the first photoresist pattern and the second photoresist pattern;   conformally forming a second dielectric layer on the first conductive pattern, the second conductive pattern and the first dielectric layer; and   engraving portions of the second dielectric layer and the second conductive pattern by laser.   
     
     
         16 . The method of  claim 15 , wherein the forming of the first photoresist pattern includes transferring a first pattern of a first photomask to the first photoresist pattern, and the forming of the second photoresist pattern includes transferring a second pattern of a second photomask to the second photoresist pattern. 
     
     
         17 . The method of  claim 16 , wherein a width of each line of the second pattern is less than 30 micrometers (μm). 
     
     
         18 . The method of  claim 16 , wherein the second pattern includes a grid, a cross, a polygon, a circle, a vertical line, a horizontal line or an oblique line. 
     
     
         19 . The method of  claim 16 , wherein a beam diameter of the laser is between about 70 μm and about 100 μm. 
     
     
         20 . The method of  claim 19 , wherein the beam diameter of the laser is greater than a pitch of the second conductive pattern.