Electronic device

Abstract

An electronic device includes a substrate, a data line disposed on the substrate, a drain disposed on the substrate and a semiconductor layer disposed on the substrate. The semiconductor layer includes a first portion connected to the data line, a second portion connected to the drain, and a third portion connected between the first portion and the second portion. At least one portion of the third portion includes at least one of IIIA group element and VA group element, and the doping concentration of the at least one of IIIA group element and VA group element is greater than 0 and less than or equal to 10{circumflex over ( )}16 atoms/cm 3 .

What is claimed is: 
     
         1 . An electronic device, comprising:
 a substrate;   a data line disposed on the substrate and extending along a first direction;   a scan line disposed on the substrate and extending along a second direction, wherein the second direction is not parallel with the first direction;   a drain disposed on the substrate; and   a semiconductor layer disposed on the substrate, wherein the semiconductor layer comprises a first portion connected to the data line, a second portion connected to the drain, and a third portion connected between the first portion and the second portion, the first portion and the second portion extend along the first direction, the third portion extends along the second direction and has a first end connected to a lower side of the first portion in a top view and a second end connected to a lower side of the second portion in the top view, the third portion has an inner edge close to the scan line, the inner edge is parallel to a side edge of the scan line, and a distance between the inner edge and the side edge of the scan line is 0 μm such that the inner edge of the third portion is aligned with the side edge of the scan line,   wherein the scan line at least partially overlaps the semiconductor layer, at least one portion of the third portion comprises at least one of IIIA group element and VA group element, and a doping concentration of the at least one of IIIA group element and VA group element is greater than 0 and less than or equal to 10{circumflex over ( )}16 atoms/cm 3 .   
     
     
         2 . The electronic device of  claim 1 , wherein the at least one portion of the third portion is a lightly doped region, and a rest portion of the third portion is a heavily doped portion that comprises at least one of IIIA group element and VA group element with a doping concentration greater than 10{circumflex over ( )}16 atoms/cm 3 . 
     
     
         3 . The electronic device of  claim 1 , wherein the third portion is entirely a lightly doped region with the doping concentration of the at least one of IIIA group element and VA group element greater than 0 and less than or equal to 10{circumflex over ( )}16 atoms/cm 3 . 
     
     
         4 . The electronic device of  claim 1 , further comprising:
 a light shielding layer disposed between the substrate and the semiconductor layer, wherein the light shielding layer at least partially overlaps the semiconductor layer,   wherein the light shielding layer has a first edge and a second edge, the scan line has a third edge and a fourth edge, the first edge is adjacent to the third edge and a first distance is between the first edge and the third edge, the second edge is adjacent to the fourth edge and a second distance is between the second edge and the fourth edge, and the first distance is different from the second distance.   
     
     
         5 . The electronic device of  claim 4 , wherein the fourth edge is adjacent to the inner edge, and the first distance is less than the second distance. 
     
     
         6 . The electronic device of  claim 4 , further comprising:
 an insulating layer disposed on the semiconductor layer, wherein the insulating layer comprises a contact hole; and   a transparent electrode electrically connected to the semiconductor layer through the contact hole, wherein the contact hole does not overlap the light shielding layer.   
     
     
         7 . The electronic device of  claim 6 , wherein the drain is electrically connected to the semiconductor layer through the contact hole. 
     
     
         8 . The electronic device of  claim 6 , further comprising another insulating layer disposed on the drain, wherein the another insulating layer comprises another contact hole exposing a portion of the drain, and the transparent electrode is electrically connected to the drain through the another contact hole. 
     
     
         9 . The electronic device of  claim 8 , further comprising a common electrode disposed on the transparent electrode, and a portion of the common electrode is disposed in the another contact hole. 
     
     
         10 . The electronic device of  claim 8 , wherein the contact hole in the insulating layer is partially overlapped with the another contact hole of the another insulating layer. 
     
     
         11 . The electronic device of  claim 4 , wherein the light shielding layer includes a light shielding element, a width of the light shielding element in the first direction is greater than a width of the scan line in the first direction. 
     
     
         12 . The electronic device of  claim 1 , wherein the doping concentration of the at least one of IIIA group element and VA group element in the at least one portion of the third portion ranges from 10{circumflex over ( )}10 to 10{circumflex over ( )}16 atoms/cm 3 . 
     
     
         13 . The electronic device of  claim 1 , wherein the semiconductor layer includes three lightly doped regions separated from each other. 
     
     
         14 . The electronic device of  claim 13 , wherein the scan line extends across the semiconductor layer, and one of the three lightly doped regions and other two of the three lightly doped regions are disposed at two opposite sides of the scan line. 
     
     
         15 . An electronic device, comprising:
 a substrate;   a data line disposed on the substrate and extending along a first direction;   a drain disposed on the substrate;   a scan line disposed on the substrate and extending along a second direction, wherein the second direction is different from the first direction; and   a semiconductor layer disposed on the substrate, wherein the semiconductor layer comprises a first portion connected to the data line, a second portion connected to the drain, and a third portion connected between the first portion and the second portion, the first portion and the second portion extend along the first direction, and the third portion extends along the second direction,   wherein one portion of the third portion comprises at least one of IIIA group element and VA group element, and a doping concentration of the at least one of IIIA group element and VA group element is greater than 0 and less than or equal to 10{circumflex over ( )}16 atoms/cm 3 ,   wherein a rest portion of the third portion is an undoped region and overlaps the scan line, the one portion of the third portion does not overlap the scan line, and a width of the rest portion of the third portion is equal to a width of the one portion of the third portion in the second direction.   
     
     
         16 . The electronic device of  claim 15 , wherein the doping concentration of the at least one of IIIA group element and VA group element in the one portion of the third portion ranges from 10{circumflex over ( )}10 to 10{circumflex over ( )}16 atoms/cm 3 .