VCSEL array with non-isolated emitters

Abstract

A VCSEL array comprises a plurality of non-isolated VCSEL emitters. Each non-isolated VCSEL emitter comprises a first reflector region, a current confining oxide layer, an oxide aperture, an active region, and a second reflector region. The current confining oxide layer and oxide aperture are made by oxidizing a relatively high Al-content layer via separate oxidation holes. The separate oxidation holes surround the oxide aperture. The first reflector regions of the plurality of non-isolated VCSEL structures are connected such that they are not isolated from each other completely by any isolation structure, and the second reflector regions of the plurality of non-isolated VCSEL structures are connected such that they are not isolated from each other completely by any isolation structure.

We claim: 
     
         1 . A Vertical Cavity Surface Emitting Laser (VCSEL) array, comprising:
 a substrate; and   a plurality of VCSEL structures formed in an area on the substrate, each VCSEL structure comprising:   a first reflector region;   a top contact metal layer over the first reflector region;   a current confining oxide layer below the first reflector region;   an active region; and   a second reflector region;   wherein the first reflector regions of the plurality of VCSEL structures are connected such that they are not completely isolated from each other by any isolation structure, all of the top contact metal layers of the plurality of VCSEL structures in each column and each row of the VCSEL array are physically connected, and the second reflector regions of the plurality of VCSEL structures are connected such that they are not completely isolated from each other by any isolation structure.   
     
     
         2 . The VCSEL array of  claim 1 , wherein the first reflector region and the second reflector region each comprise a Distributed Bragg Reflector (DBR) structure. 
     
     
         3 . The VCSEL array of  claim 1 , wherein the current confining oxide layer is disposed between the first reflector region and the active region. 
     
     
         4 . The VCSEL array of  claim 1 , wherein the current confining oxide layer is disposed between the second reflector region and the active region. 
     
     
         5 . The VCSEL array of  claim 1 , wherein the current confining oxide layer forms an oxide aperture. 
     
     
         6 . The VCSEL array of  claim 5 , wherein each oxide aperture is surrounded by a plurality of oxidation holes that extends vertically through at least the first reflector region. 
     
     
         7 . The VCSEL array of  claim 6 , wherein the plurality of oxidation holes is separate and concentric on a center of the oxide aperture. 
     
     
         8 . The VCSEL array of  claim 7 , wherein each oxidation hole is trapezoid-like shape. 
     
     
         9 . The VCSEL array of  claim 6 , wherein the plurality of oxidation holes was used for creating the current confining oxide layer through a wet oxidation process. 
     
     
         10 . The VCSEL array of  claim 1 , wherein the top contact metal layers serve as top contacts for the plurality of VCSEL structures.