Substrate with conductive film, reflective mask blank, reflective mask, and method for manufacturing semiconductor device

Abstract

A substrate with a conductive film for manufacturing a reflective mask, the substrate comprising a conductive film having excellent chemical resistance and a small surface roughness (Rms), is obtained. A substrate with a conductive film comprises a conductive film on one of two main surfaces of the substrate. The conductive film comprises chromium. The conductive film comprises a structure in which a lower layer and an upper layer are layered in this order from the substrate side. The lower layer is amorphous. The upper layer has a crystallinity.

The invention claimed is: 
     
         1 . A substrate with a conductive film comprising a conductive film on one of two main surfaces of the substrate, wherein
 the conductive film comprises a structure in which a lower layer and an upper layer are layered in this order from the substrate side,   the lower layer is amorphous,   the upper layer has a crystallinity,   when a diffracted X-ray spectrum of a diffracted X-ray intensity with respect to a diffraction angle 2θ is measured by an X-ray diffraction method for the upper layer, the diffracted X-ray spectrum has peaks in a range where the diffraction angle 2θ is 41 degrees or more and 47 degrees or less and in a range where the diffraction angle 2θ is 56 degrees or more and 60 degrees or less,   the upper layer comprises chromium and nitrogen, and   the nitrogen content of the upper layer is 1 atomic % or more and 15 atomic % or less.   
     
     
         2 . The substrate with a conductive film according to  claim 1 , wherein the lower layer comprises chromium and oxygen. 
     
     
         3 . The substrate with a conductive film according to  claim 1 , wherein a chromium content of the upper layer is larger than a chromium content of the lower layer. 
     
     
         4 . The substrate with a conductive film according to  claim 1 , wherein the upper layer has no peak detected in a range where the diffraction angle 2θ is 35 degrees or more and 38 degrees or less. 
     
     
         5 . The substrate with a conductive film according to  claim 1 , wherein the lower layer comprises chromium and oxygen, and the oxygen content of the lower layer is 1 atomic % or more and 20 atomic % or less. 
     
     
         6 . The substrate with a conductive film according to  claim 1 , wherein the lower layer comprises chromium, oxygen and nitrogen. 
     
     
         7 . A substrate with a conductive film, wherein a multilayer reflective film in which a high refractive index layer and a low refractive index layer are alternately layered is formed on the main surface opposite to the main surface on which the conductive film of the substrate with a conductive film according to  claim 1  is formed. 
     
     
         8 . The substrate with a conductive film according to  claim 7 , wherein a protective film is formed on the multilayer reflective film. 
     
     
         9 . A reflective mask blank comprising a structure in which a multilayer reflective film and a pattern forming thin film are layered in this order on one main surface of a substrate,
 the reflective mask blank comprising a conductive film on the other main surface of the substrate, wherein   the conductive film comprises a structure in which a lower layer and an upper layer are layered in this order from the substrate side,   the lower layer is amorphous,   the upper layer has a crystallinity,   when a diffracted X-ray spectrum of a diffracted X-ray intensity with respect to a diffraction angle 2θ is measured by an X-ray diffraction method for the upper layer, the diffracted X-ray spectrum has peaks in a range where the diffraction angle 2θ is 41 degrees or more and 47 degrees or less and in a range where the diffraction angle 2θ is 56 degrees or more and 60 degrees or less,   the upper layer comprises chromium and nitrogen, and   the nitrogen content of the upper layer is 1 atomic % or more and 15 atomic % or less.   
     
     
         10 . The reflective mask blank according to  claim 9 , wherein the lower layer comprises chromium and oxygen. 
     
     
         11 . The reflective mask blank according to  claim 9 , wherein a chromium content of the upper layer is larger than a chromium content of the lower layer. 
     
     
         12 . The reflective mask blank according to  claim 9 , wherein the upper layer has no peak detected in a range where the diffraction angle 2θ is 35 degrees or more and 38 degrees or less. 
     
     
         13 . The reflective mask blank according to  claim 9 , wherein a protective film is formed between the multilayer reflective film and the pattern forming thin film. 
     
     
         14 . The reflective mask blank according to  claim 9 , wherein the lower layer comprises chromium and oxygen, and the oxygen content of the lower layer is 1 atomic % or more and 20 atomic % or less. 
     
     
         15 . The reflective mask blank according to  claim 9 , wherein the lower layer comprises chromium, oxygen and nitrogen. 
     
     
         16 . A reflective mask comprising a transfer pattern formed on the pattern forming thin film of the reflective mask blank according to  claim 10 . 
     
     
         17 . A method for manufacturing a semiconductor device, the method comprising exposing and transferring a transfer pattern onto a resist film on a semiconductor substrate using the reflective mask according to  claim 16 .