Embeddable coupled inductors for packaged semiconductor devices

Abstract

A package substrate for a semiconductor device includes a substrate core and a coupled inductor embedded in the substrate core. The coupled inductor may include a double clad laminate having a dielectric layer and first and second metal layers sandwiching the dielectric layer. The first and second metal layers may be patterned to define spiral windings. The coupled inductor may further include first and second magnetic core layers sandwiching the double clad laminate. Alternatively, the coupled inductor may include a magnetic core embedded in a dielectric substrate and first and second conductive windings surrounding the magnetic core. Each of the first and second conductive windings may include one or more first segments defined by metal patterning in a plane parallel to the magnetic core and one or more second segments defined by one or more conductive vias extending through the magnetic core or through dielectric surrounding the magnetic core.

What is claimed is: 
     
         1 . A method of manufacturing a coupled inductor embeddable in a package substrate of a semiconductor device, the method comprising:
 providing a double clad laminate including a dielectric layer and first and second metal layers sandwiching the dielectric layer;   patterning the first and second metal layers to define spiral windings;   applying a dielectric material on a first side of the double clad laminate and on a second side of the double clad laminate opposite the first side;   providing a first magnetic core layer on the dielectric material on the first side of the double clad laminate;   providing a second magnetic core layer on the dielectric material on the second side of the double clad laminate;   covering the first magnetic core layer with a dielectric material to define a first outer surface of the coupled inductor; and   forming at least one via to provide electrical connection from the first outer surface of the coupled inductor to the first metal layer.   
     
     
         2 . The method of  claim 1 , wherein each of the first and second magnetic core layers comprises a multilayered core including at least two magnetic films with adhesive therebetween. 
     
     
         3 . The method of  claim 2 , wherein, in each of the first and second magnetic core layers, the at least two magnetic films include at least one material selected from the group consisting of CoNiFe, NiFe, and SiFe. 
     
     
         4 . The method of  claim 1 , wherein the dielectric layer of the double clad laminate comprises pre-preg. 
     
     
         5 . The method of  claim 1  wherein a thickness of the dielectric layer of the double clad laminate is 25 μm-900 μm. 
     
     
         6 . The method of  claim 1 , wherein the first and second metal layers comprise copper. 
     
     
         7 . The method of  claim 1 , further comprising:
 covering the second magnetic core layer with a dielectric material to define a second outer surface of the coupled inductor; and   forming at least one via to provide electrical connection from the second outer surface of the coupled inductor to the second metal layer.   
     
     
         8 . A method of manufacturing a semiconductor device, the method comprising:
 providing a first magnetic core layer;   providing a second magnetic core layer;   providing a double clad laminate between the first and second magnetic core layers, the double clad laminate including a dielectric layer and first and second metal layers sandwiching the dielectric layer;   patterning the first and second metal layers to define spiral windings, thereby producing a coupled inductor comprising the first magnetic core layer, the second magnetic core layer, and the double clad laminate that is between the first and second magnetic core layers and includes the dielectric layer and the patterned first and second metal layers;   covering the first magnetic core layer with a dielectric material to define a first outer surface of the coupled inductor;   forming at least one via to provide electrical connection from the first outer surface of the coupled inductor to the first metal layer; and   embedding the coupled inductor in a package substrate of the semiconductor device.   
     
     
         9 . The method of  claim 8 , wherein each of the first and second magnetic core layers comprises a multilayered core including at least two magnetic films with adhesive therebetween. 
     
     
         10 . The method of  claim 9 , wherein, in each of the first and second magnetic core layers, the at least two magnetic films include at least one material selected from the group consisting of CoNiFe, NiFe, and SiFe. 
     
     
         11 . The method of  claim 8 , wherein the dielectric layer of the double clad laminate comprises pre-preg. 
     
     
         12 . The method of  claim 8  wherein a thickness of the dielectric layer of the double clad laminate is 25 μm-900 μm. 
     
     
         13 . The method of  claim 8 , wherein the first and second metal layers comprise copper. 
     
     
         14 . The method of  claim 8 , further comprising:
 applying a dielectric material between the first magnetic core layer and a first side of the double clad laminate; and   applying a dielectric material between the second magnetic core layer and a second side of the double clad laminate opposite the first side.   
     
     
         15 . A method of manufacturing a coupled inductor embeddable in a package substrate of a semiconductor device, the method comprising:
 providing a first magnetic core layer;   providing a second magnetic core layer;   providing a double clad laminate between the first and second magnetic core layers, the double clad laminate including a dielectric layer and first and second metal layers sandwiching the dielectric layer;   patterning the first and second metal layers to define spiral windings;   covering the first magnetic core layer with a dielectric material to define a first outer surface of the coupled inductor; and   forming at least one via to provide electrical connection from the first outer surface of the coupled inductor to the first metal layer.   
     
     
         16 . The method of  claim 15 , wherein each of the first and second magnetic core layers comprises a multilayered core including at least two magnetic films with adhesive therebetween. 
     
     
         17 . The method of  claim 16 , wherein, in each of the first and second magnetic core layers, the at least two magnetic films include at least one material selected from the group consisting of CoNiFe, NiFe, and SiFe. 
     
     
         18 . The method of  claim 15 , wherein the dielectric layer of the double clad laminate comprises pre-preg. 
     
     
         19 . The method of  claim 15  wherein a thickness of the dielectric layer of the double clad laminate is 25 μm-900 μm. 
     
     
         20 . The method of  claim 15 , wherein the first and second metal layers comprise copper. 
     
     
         21 . The method of  claim 15 , further comprising:
 applying a dielectric material between the first magnetic core layer and a first side of the double clad laminate; and   applying a dielectric material between the second magnetic core layer and a second side of the double clad laminate opposite the first side.