US12579020B2ActiveUtilityA1
Circuits, machines and systems that heal
Est. expiryDec 23, 2042(~16.5 yrs left)· nominal 20-yr term from priority
Inventors:FISKE MICHAEL STEPHEN
G06F 8/443G06F 11/0721G06F 11/0793G06N 20/00
66
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Claims
Abstract
This invention pertains to machines, circuits, and programs that can heal, using a principle of self-modifiability. In some embodiments, a machine can self-modify its machine instructions when one or more instructions are missing or corrupted or malfunctioning. In some embodiments, a machine uses a meta instruction to heal its instructions. In some embodiments, the invention describes a flip-flop circuit that can heal its computation when the circuit is sabotaged by a noise attack. In some embodiments, a self-modifiable circuit uses meta variables and meta operators as a part of the circuit design to heal the circuit when it is attacked.
Claims
exact text as granted — not AI-modifiedThe invention claimed is:
1 . A circuit-implemented method comprising:
wherein a circuit contains a first subcircuit and a second subcircuit and a third subcircuit; wherein the first subcircuit computes the digital logic of a D flip-flop; wherein the second subcircuit computes the digital logic of a D flip-flop; wherein the first subcircuit has a first output line, and the second subcircuit has a second output line; wherein the third subcircuit receives input from the first output line and the second output line; wherein the third subcircuit measures a voltage difference between the input of the first output line and the input of the second output line; wherein if the voltage difference exceeds a threshold voltage, the third subcircuit adjusts the voltage of the first output line to the same voltage as the second output line; wherein the first subcircuit contains at least one NAND gate; wherein the second subcircuit contains at least one NAND gate; wherein the third subcircuit contains an operational amplifier.
2 . The circuit-implemented method of claim 1 comprising:
wherein the at least one NAND gate in the first subcircuit is constructed from transistors;
and wherein the at least one NAND gate in the second subcircuit is constructed from transistors.Cited by (0)
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