Semiconductor device and wiring method thereof

Abstract

Provides a semiconductor device that can separate components easily. Gate electrode 42 is formed only within component forming region 32, and gate electrode 42 and aluminum wiring 48 are connected in component forming region 32. Therefore, there is almost no inversion of the surface of the semiconductor substrate 36 that is under field oxide film 38 due to the voltage of the concerned connection area and gate electrode 42. Also, there is interlayer film 44 between aluminum wiring 48 and field oxide film 38, so there is almost no inversion of the surface of the semiconductor substrate 36 that is under field oxide film 38 due to the voltage of aluminum wiring 48. Therefore, it is possible to separate components without increasing overall length L 1 of field oxide film 38, increasing the film thickness of field oxide film 38, or increasing the concentration of channel stop ions implanted into the surface of the semiconductor substrate 36 that is under field oxide film 38.

1 . A semiconductor device, comprising: 
 a base semiconductor layer;    an insulation film for separating components formed on the base semiconductor layer; and    a semiconductor component which is formed on the base semiconductor layer in a component forming region separated by the insulation film for separating components, the semiconductor component having a first conductive layer;    wherein the semiconductor device comprises: 
 an interlayer insulation film placed on the insulation film for separating components and the first conductive layer; and  
 a second conductive layer placed on the interlayer insulation film;  
 wherein the first conductive layer is substantially formed only within the component forming region; and  
 wherein the first conductive layer and the second conductive layer are substantially connected only within the component forming region.  
   
     
     
         2 . The semiconductor device according to    claim 1   , wherein the semiconductor component is a high withstand voltage semiconductor component; the semiconductor device comprising a low withstand voltage semiconductor component in addition to the high withstand voltage semiconductor component.  
     
     
         3 . The semiconductor device according to    claim 1   , wherein the semiconductor component comprises: 
 a first semiconductor region of a first conductive type;    a second semiconductor region of a first conductive type, wherein the second semiconductor region is formed separate from the first semiconductor region by a specified distance;    a second conductive type channel forming region formed between the first semiconductor region and the second semiconductor region;    a gate insulation film formed on the channel forming region; and    the first conductive layer formed on the gate insulation film.    
     
     
         4 . The semiconductor device according to    claim 3   , wherein a film thickness of an insulation film under a connecting area of the first conductive layer and the second conductive layer, the insulation film being continuous with the gate insulation film, is thicker than a film thickness of the gate insulation film.  
     
     
         5 . The semiconductor device according to    claim 3   , wherein a width of an area that corresponds to the portion connecting with the second conductive layer, the width being in the channel length direction of the first conductive layer, is wider than the width of areas other than the area corresponding to the connecting area.  
     
     
         6 . The semiconductor device according to    claim 3   , wherein the semiconductor component is a high withstand voltage semiconductor component; the semiconductor device comprising a low withstand voltage semiconductor component in addition to the high withstand voltage semiconductor component.  
     
     
         7 . The semiconductor device according to    claim 3   , wherein substantially flat shape of the channel forming region, the gate insulation film, and the first conductive layer is in a shape of a ring that surrounds the first semiconductor region; substantially flat shape of the second semiconductor region is in a shape of a ring that surrounds the channel forming region.  
     
     
         8 . The semiconductor device according to    claim 7   , wherein a film thickness of an insulation film under a connecting area of the first conductive layer and the second conductive layer, the insulation film being continuous with the gate insulation film, is thicker than a film thickness of the gate insulation film.  
     
     
         9 . The semiconductor device according to    claim 7   , wherein a width of an area that corresponds to the portion connecting with the second conductive layer, the width being in the channel length direction of the first conductive layer, is wider than the width of areas other than the area corresponding to the connecting area.  
     
     
         10 . The semiconductor device according to    claim 7   , wherein the semiconductor component is a high withstand voltage semiconductor component; the semiconductor device comprising a low withstand voltage semiconductor component in addition to the high withstand voltage semiconductor component.  
     
     
         11 . The semiconductor device according to    claim 7   , wherein the substantially flat shape of the channel forming region, the gate insulation film, and the first conductive layer is in a rectangular ring shape that surrounds the first semiconductor region; the first conductive layer and the second conductive layer is connected at a corner of the rectangular ring shaped first conductive layer.  
     
     
         12 . The semiconductor device according to    claim 11   , wherein a film thickness of an insulation film under a connecting area of the first conductive layer and the second conductive layer, the insulation film being continuous with the gate insulation film, is thicker than a film thickness of the gate insulation film.  
     
     
         13 . The semiconductor device according to    claim 11   , wherein a width of an area that corresponds to the portion connecting with the second conductive layer, the width being in the channel length direction of the first conductive layer, is wider than the width of areas other than area corresponding to the connecting area.  
     
     
         14 . The semiconductor device according to    claim 11   , wherein the semiconductor component is a high withstand voltage semiconductor component; the semiconductor device comprising a low withstand voltage semiconductor component in addition to the high withstand voltage semiconductor component.  
     
     
         15 . A wiring method for a semiconductor device comprising insulation film for separating components formed on a base semiconductor layer, wherein wiring is substantially performed using a first wiring layer only within a component forming region separated by the insulation film for separating components; 
 wiring is performed using a second wiring layer on an interlayer insulation film formed on the insulation film for separating components and the first wiring layer;    the first wiring layer and the second wiring layer are substantially connected only within the component forming region.