US2001007808A1PendingUtilityA1

Suface procesing method by blowing submicron particles

29
Priority: Feb 6, 1990Filed: Mar 25, 1999Published: Jul 12, 2001
Est. expiryFeb 6, 2010(expired)· nominal 20-yr term from priority
H10P 95/00C03C 19/00B24C 1/00C23C 4/12B05B 7/1445Y10T83/263C03C 17/001C23C 24/04B24C 9/006B05B 7/166B24C 11/00Y10T29/49989B05D 1/12Y02P70/10B05B 15/25B05B 7/1404
29
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A surface processing method by blowing submicron particles is disclosed, in which submicron particles are blown against a surface of a work to deposit a layer of the material of the particles on a surface of the work, or etching the surface of the work. The processing method uses blowing air stream containing submicron particles having average particles size ranging between 0.01 and 3.0 μm. The deposition or etching is effected depending on an incident angle of the particles to the surface of work. According to the method deposition of the material can be effected with very high deposition rate and in case of etching very smooth etched surface is obtained.

Claims

exact text as granted — not AI-modified
We claim as our invention:  
     
         1 . A surface processing method comprising: forming a carrier gas stream containing submicron particles having average particle size in the range between 0.01 and 3.0 μm, blowing said carrier gas stream against a surface of a work.  
     
     
         2 . A surface processing method according to    claim 1   , said carrier gas stream is blown against the surface of the work with an incident angle less than 40° to cause deposition of a layer which comprises a material forming said particles.  
     
     
         3 . A surface processing method according to    claim 2   , said incident angle is not more than 10°.  
     
     
         4 . A processing method according to    claim 2    or    3   , said particle has a hardness larger than a hardness of the surface of the work.  
     
     
         5 . A processing method according to    claim 1   , said carrier gas stream is blown against the surface of the work with an incident angle between 40 and 90°to cause etching of the surface of said work.  
     
     
         6 . A processing method according to    claim 1   , said particles are blown against the surface of the work with velocity not less than 50 m/sec.

Cited by (0)

No later patents cite this yet.

References (0)

No backward citations on record.