Tab type semiconductor device

Abstract

There is disclosed a TAB style BGA type semiconductor device. This semiconductor device comprises a semiconductor chip on which an integrated circuit is formed, and a polyimide tape which has a conductive pattern and which is allowed to adhere to the semiconductor chip. The conductive pattern includes a bonding portion connected to the pad of the semiconductor chip, a pad portion connected to the outside electrode, and an electrically floating island-like portion in addition to a wiring portion for connecting the bonding portion and the pad portion.

What is claimed is:  
     
         1 . A semiconductor device comprising: 
 a semiconductor chip having a pad;    an insulating base which adheres to the semiconductor chip;    a conductive pattern formed on the insulating base, the conductive pattern including a bonding portion connected to the pad of the semiconductor chip, a pad portion connected to an outside electrode, and a wiring portion connecting the bonding portion and the pad portion; and    an electrically floating island-like portion formed on the insulating base.    
     
     
         2 . The semiconductor device according to    claim 1   , wherein the electrically floating island-like portion includes at least one of a planar pattern, a stripe pattern, a checker pattern and a mesh pattern.  
     
     
         3 . The semiconductor device according to    claim 1   , wherein the electrically floating island-like pattern is arranged at least in a pad area of the insulating base where the pad portion is arranged in a matrix-like configuration.  
     
     
         4 . The semiconductor device according to    claim 1   , wherein the electrically floating island-like pattern is arranged at least outside of a pad area of the insulating base where the pad portion is arranged in a matrix-like configuration.  
     
     
         5 . The semiconductor device according to    claim 4   , wherein the conductive pattern includes an option pad portion arranged outside of the pad area.  
     
     
         6 . The semiconductor device according to    claim 1   , wherein the electrically floating island-like pattern is constituted of the same material as the conductive material constituting the conductive pattern.  
     
     
         7 . The semiconductor device according to    claim 6   , wherein the conductive material has a vikers hardness of at least 170 HV.  
     
     
         8 . The semiconductor device according to    claim 1   , wherein the insulating base is a part of TAB tape.  
     
     
         9 . A semiconductor device comprising: 
 a semiconductor chip having a pad;    an insulating base which adheres to the semiconductor chip; and    a conductive pattern formed on the insulating base, the conductive pattern including a bonding portion connected to the pad of the semiconductor chip, a pad portion connected to an outside electrode, and a wiring portion connecting the bonding portion and the pad portion and having a tend portion with a different width.    
     
     
         10 . The semiconductor device according to    claim 9   , wherein the configuration of the tend portion is a fin-like configuration.  
     
     
         11 . The semiconductor device according to    claim 10   , wherein the tend portion of the fin-like configuration extends between the conductive pattern and another conductive pattern.  
     
     
         12 . The semiconductor device according to    claim 9   , wherein the tend portion is arranged at least in a pad area of the insulating base where the pad portion is arranged in a matrix-like configuration.  
     
     
         13 . The semiconductor device according to    claim 9   , wherein the tend portion is arranged at least outside of a pad area of the insulating base where the pad portion is arranged in a matrix-like configuration.  
     
     
         14 . The semiconductor device according to    claim 13   , wherein the conductive pattern includes an option pad portion arranged outside of the pad area.  
     
     
         15 . The semiconductor device according to    claim 9   , wherein the conductive material constituting the conductive pattern has a hardness of at least 170 HV.  
     
     
         16 . The semiconductor device according to    claim 9   , wherein the insulating base is a part of TAB tape.  
     
     
         17 . A semiconductor device comprising: 
 a semiconductor chip;    an insulating base which adheres onto the semiconductor chip;    a conductive pattern formed on the insulating base, the conductive pattern including a bonding portion connected to the pad of the semiconductor chip, a pad portion connected to an outside electrode, and a wiring portion connecting the bonding portion and the pad portion; and    a covering layer which covers the conductive pattern formed on the insulating base at least except for the bonding portion and the pad portion;    wherein an intersection angle between the edge of the covering layer and the bonding portion is 90 degrees or more.    
     
     
         18 . The semiconductor device according to    claim 17   , wherein the configuration of the bonding portion is a tapered configuration which becomes thinner toward the tip of the bonding portion.  
     
     
         19 . The semiconductor device according to    claim 17   , wherein the covering layer is a resist.  
     
     
         20 . The semiconductor device according to    claim 18   , wherein the covering layer is formed by printing.