Method and apparatus for manufacturing semiconductor device

Abstract

semiconductor device, including the step of supplying an oxidizing gas and a nitriding gas onto one main surface of a semiconductor substrate while heating the substrate so as to oxynitride the surface region of the substrate, wherein the supplying step is performed such that the gaseous phase above the main surface of the substrate forms a first region having a substantially uniform temperature in a direction perpendicular to the main surface of the substrate and a second region interposed between the first region and the substrate and having a temperature gradient in a direction perpendicular to the main surface of the substrate such that the temperature is elevated toward the substrate, and the distance from the main surface of the substrate to the interface between the first and second regions is set at 9.5 cm or less.

1 . A method of manufacturing a semiconductor device, comprising the step of: 
 supplying an oxidizing gas and a nitriding gas onto one main surface of a semiconductor substrate while heating the substrate so as to oxynitride the surface region of the substrate;    wherein said supplying step is performed such that the gaseous phase above the main surface of the substrate forms a first region having a substantially uniform temperature in a direction perpendicular to the main surface of the substrate and a second region interposed between the first region and the substrate and having a temperature gradient in a direction perpendicular to the main surface of the substrate such that the temperature is elevated toward the substrate;    and the distance from the main surface of the substrate to the interface between the first and second regions is set at 9.5 cm or less.    
     
     
         2 . A method according to    claim 1   , wherein said substrate is a silicon substrate.  
     
     
         3 . A method according to    claim 1   , wherein said substrate is heated by light irradiation.  
     
     
         4 . A method according to    claim 1   , wherein said supplying step is performed such that the temperature of said gaseous phase is 900° C. or lower at a point 1.5 cm away from the main surface of said substrate.  
     
     
         5 . A method according to    claim 1   , wherein said supplying step is performed while heating said substrate to 1000° C. or higher.  
     
     
         6 . A method according to    claim 5   , wherein said supplying step is performed such that the temperature of said gaseous phase is 900° C. or lower at a point 1.5 cm away from the main surface of said substrate.  
     
     
         7 . A method according to    claim 1   , wherein said oxidizing gas is an oxygen gas and said nitriding gas is a nitrogen monoxide gas.  
     
     
         8 . A method according to    claim 1   , wherein said oxidizing gas and said nitriding gas are supplied in the form of a mixed gas thereof onto said main surface of the substrate.  
     
     
         9 . A method according to    claim 1   , wherein said supplying step is performed while rotating said substrate.  
     
     
         10 . A method according to    claim 9   , wherein said substrate is rotated at a speed of at least 100 rpm.  
     
     
         11 . A method according to    claim 1   , wherein said oxidizing gas and said nitriding gas are supplied in the form of a mixed gas thereof in a direction parallel to one surface of said substrate.  
     
     
         12 . A method according to    claim 11   , wherein the flow rate of said mixed gas is set at 1.05×10 20  cm/sec or higher.  
     
     
         13 . An apparatus for manufacturing a semiconductor device, comprising: 
 a process vessel having a process chamber formed therein, an inlet port, and an outlet port positioned below the inlet port;    a holder rotatably arranged within the process vessel for holding a target substrate to be treated;    a light source arranged to face the target substrate held by the holder for irradiating the substrate with light for heating the substrate; and    a shower head for supplying substantially uniformly a gas introduced through the inlet port onto one surface of the target substrate.    
     
     
         14 . An apparatus according to    claim 13   , further comprising a driving mechanism for rotating said holder.  
     
     
         15 . An apparatus according to    claim 13   , wherein said driving mechanism is capable of rotating said holder at a speed of at least 100 rpm.  
     
     
         16 . An apparatus according to    claim 13   , further comprising gas supply sources connected to said process chamber via said inlet port for supplying an oxidizing gas and a nitriding gas into the process chamber.  
     
     
         17 . An apparatus for manufacturing a semiconductor device, comprising: 
 a process vessel having a process chamber formed therein, an inlet port, and an outlet port positioned substantially flush with the inlet port;    a holder arranged within the process vessel for holding a target substrate to be treated; and    a light source arranged to face the target substrate held by the holder for irradiating the substrate with light for heating the substrate.    
     
     
         18 . An apparatus according to    claim 17   , wherein said holder permits said substrate to be positioned intermediate between said inlet port and said outlet port during at least the processing step of the substrate.  
     
     
         19 . An apparatus according to    claim 18   , wherein said holder permits said substrate to be positioned substantially flush with said inlet port and said outlet port during at least the processing step of the substrate.  
     
     
         20 . An apparatus according to    claim 19   , further comprising gas supply sources connected to said process chamber via said inlet port for supplying an oxidizing gas and a nitriding gas into the process chamber.