Inductors, semiconductor devices, and methods of manufacturing semiconductor devices

Abstract

Certain embodiments relate to an inductor that can be manufactured with the existing manufacturing facility, and greatly contributes to a further miniaturization of apparatuses. Embodiments include a semiconductor device having an inductor 100 and a CMOSFET 200 on a SOI. The inductor 100 is obtained by conducting a photolithography and an etching on a cobalt thin film formed on the LOCOS film 6.

What is claimed:  
     
         1 . An inductor comprising a pattern formed with a thin film of ferromagnetic metal material.  
     
     
         2 . An inductor according to    claim 1   , wherein the ferromagnetic metal material has a specific resistance of 300 Ωcm or less at room temperature.  
     
     
         3 . An inductor according to    claim 1   , wherein the ferromagnetic metal material is one of cobalt (Co), iron (Fe) and nickel (Ni).  
     
     
         4 . An inductor according to    claim 1   , wherein the ferromagnetic metal material is cobalt (Co).  
     
     
         5 . An inductor according to    claim 1   , wherein the inductor comprises a single layer of the ferromagnetic material.  
     
     
         6 . A semiconductor device comprising an inductor formed in an integrated circuit in accordance with of    claim 1   .  
     
     
         7 . A semiconductor device according to    claim 6   , 
 the semiconductor device obtained by forming a thin film of ferromagnetic metal material on an insulation layer on which an inductor is formed, a gate electrode and a silicon layer forming a source/drain region,    forming a pattern of the inductor with the thin film, and    forming a silicide layer of ferromagnetic metal material above the gate electrode and the source/drain region.    
     
     
         8 . A semiconductor device comprising an inductor according to    claim 1    formed over a silicon substrate through an insulation layer, the silicon substrate having an upper side on which the insulation layer is formed and a lower side opposite the upper side, wherein the silicon substrate defines a through hole formed below an area where the inductor is formed, the through hole being formed by etching from the lower side towards the upper side of the silicon substrate, and the through-hole defining a region in an insulating state.  
     
     
         9 . A method for manufacturing a semiconductor device, comprising forming a pattern for an inductor by conducting photolithography and etching a thin film of ferromagnetic metal material.  
     
     
         10 . A method as in    claim 9   , wherein the inductor includes a single layer of the ferromagnetic metal material.  
     
     
         11 . A method as in    claim 9   , wherein the inductor consists of a single layer of the ferromagnetic metal material.  
     
     
         12 . A method as in    claim 11   , wherein the ferromagnetic metal material comprises a material selected from the group consisting of cobalt, iron and nickel.  
     
     
         13 . A method as in    claim 9   , wherein the ferromagnetic material comprises cobalt.  
     
     
         14 . A method for manufacturing a semiconductor device, comprising: 
 forming a layer of ferromagnetic material in direct contact with an insulating layer, a silicon layer, and a gate electrode layer;    heating the ferromagnetic material to form a silicide layer where the ferromagnetic material is in direct contact with the silicon layer and the gate electrode layer; and    etching the ferromagnetic material to form an inductor on the insulating layer.    
     
     
         15 . A method as in    claim 14   , further comprising forming an opening in a silicon substrate positioned under the insulating layer so that the opening in the silicon substrate is positioned under the inductor.  
     
     
         16 . A method as in    claim 15   , wherein the inductor comprises a single layer of the ferromagnetic material.  
     
     
         17 . A method as in    claim 16   , wherein the ferromagnetic material is a metal.  
     
     
         18 . A method as in    claim 16   , wherein the ferromagnetic material is selected from the group consisting of cobalt, iron and nickel.  
     
     
         19 . A method as in    claim 15   , further comprising filling the opening in the silicon substrate with an insulating material.  
     
     
         20 . A method as in    claim 19   , wherein the insulating material filling the opening comprises a material selected from the group consisting of a polyimide and silicon oxide.  
     
     
         21 . A method for forming a semiconductor device including a field effect transistor and an inductor, comprising: 
 forming a layer of ferromagnetic material in direct contact with an insulating layer;    patterning and etching the ferromagnetic material to form an inductor on the insulating layer; and    forming an opening in a silicon substrate positioned under the insulating layer so that the opening in the silicon substrate is positioned under the inductor.    
     
     
         22 . A method as in    claim 21   , further comprising filling the opening with an insulating material.  
     
     
         23 . A method as in    claim 21   , wherein the inductor comprises a single layer of the ferromagnetic material etched in a coil shape.  
     
     
         24 . A method as in    claim 21   , wherein the ferromagnetic material is a metal.  
     
     
         25 . An inductor consisting of a thin film of ferromagnetic material.