Calibrated scale in the nanometer range for technical devices used for the high-resolution or ultrahigh-resolution imaging of structures

Abstract

A scale in the nanometer range for technical devices which are used for the high-resolution or ultrahigh-resolution imaging of structures. To construct the scale, at least two different crystalline or amorphous materials are used, which, when imaged, are easily distinguished from one another by their contrast. These material layers are deposited using a suitable material deposition method as a heterolayer sequence onto a substrate material. The produced heterolayer sequence is characterized experimentally using an analysis method that is sensitive to the individual layer thicknesses of the heterolayer sequence. The data obtained from the analysis method are evaluated and recorded. The layer structure is exposed by splitting open the heterolayer sequence in the deposition direction. The scale is suited for calibrating technical devices used for scanning electron microscopy, scanning transmission electron microscopy, or scanning probe microscopy (atomic force microscopy, scanning tunneling microscopy).

What is claimed is:  
     
         1 . A scale for technical devices which are used for high-resolution or ultrahigh-resolution imaging of structures, the scale comprising: 
 a plurality of crystalline or amorphous first material layers having a first thickness; and    a plurality of crystalline or amorphous second material layers which are distinguishable from the first material layers when imaged using high-resolution or ultrahigh-resolution imaging methods, the second material layers having a second thickness and the first material layers alternating with the second material layers;    at least one of the first or second material layers having a thickness of less than twenty-five nanometers.    
     
     
         2 . The scale as recited in    claim 1    wherein the first material layers have a different strain than the second material layers.  
     
     
         3 . The scale as recited in    claim 1    wherein both the first and second material layers have a thickness of fewer than ten nanometers.  
     
     
         4 . The scale as recited in    claim 1    wherein the first and second material layers have different band gaps.  
     
     
         5 . The scale as recited in    claim 1    further comprising a plurality of third material layers having a third thickness different from the second thickness and a plurality of fourth material layers having the same thickness as the first thickness, the third material layers alternating with the fourth material layers.