Light emitting diode with a permanent substrate of transparent glass or quartz and the method for manufacturing the same

Abstract

A method of manufacturing a light emitting diode (LED) includes growing a light emitting region on a temporary substrate, bonding a transparent substrate of glass or quartz to the light emitting region and then removing the temporary substrate. A metal bonding agent also serving as an ohmic contact layer with LED is used to bond the transparent substrate to form a dual substrate LED element which is then heated in a wafer holding device that includes a graphite lower chamber and a graphite upper cover with a stainless steel screw. Because of the different thermal expansion coefficients between stainless and graphite, the stainless steel screw applies a pressure to the dual substrate LED element during the heating process to assist the bonding of the transparent substrate.

What is claimed is:  
     
         1 . A light emitting diode, comprising: 
 a plane light emitting region;    a permanent substrate formed by a transparent material;    a metal bonding agent sandwiched between said light emitting region and said permanent substrate; and    two plane electrodes formed on said light emitting region.    
     
     
         2 . The light emitting diode as claimed in    claim 1   , wherein one of said two plane electrodes is an exposed area of said metal bonding agent not covered by said light emitting region.  
     
     
         3 . The light emitting diode as claimed in    claim 1   , wherein said permanent substrate is selected from glass or quartz.  
     
     
         4 . The light emitting diode as claimed in    claim 1   , wherein said metal bonding agent is selected from the group of AuBe, In, Sn, Al, Au, Pt, Ti, Zn and Ag.