US2001029061A1PendingUtilityA1

Insulator/metal bonding island for active-area silver epoxy bonding

Priority: Apr 9, 1999Filed: Mar 26, 2001Published: Oct 11, 2001
Est. expiryApr 9, 2019(expired)· nominal 20-yr term from priority
H10W 90/724H10W 72/9415H10W 72/07331H10W 72/952H10W 72/354H10W 72/352H10W 72/325H10W 72/252H10W 72/251H10W 72/90H10W 72/073H10W 72/012
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Claims

Abstract

A semiconductor interconnection device having a semiconductor die, a plurality of epoxy bonds, and an array of insulating islands is disclosed. The semiconductor die has a plurality of conductive contacts. The plurality of epoxy bonds has a metallic substance such as silver. The epoxy bonds are configured to provide interconnection between the semiconductor die and an external structure. The plurality of epoxy bonds is selectively applied to the plurality of conductive contacts on the semiconductor die and corresponding conductive contacts on the external structure. The array of insulating islands is coupled to the plurality of conductive contacts. The islands are configured to prevent migration of the metallic substance from the plurality of epoxy bonds to the semiconductor die through the plurality of conductive contacts.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A method of manufacturing a flip-chip interconnection device, comprising: 
 providing an array of insulating islands on a semiconductor die;    applying a plurality of metal contacts over said array of insulating islands; and    selectively depositing an array of epoxy bonds on said plurality of metal contacts, where said providing said array of insulating islands prevents migration of metallic substance in said array of epoxy bonds into said semiconductor die.    
     
     
         2 . The method of    claim 1   , further comprising: 
 aligning said array of epoxy bonds on top of respective metal contacts on an external structure; and    bonding said semiconductor die to said external structure.    
     
     
         3 . The method of    claim 1   , wherein said providing said array of insulating islands includes depositing a layer of thermally grown silicon dioxide.  
     
     
         4 . The method of    claim 1   , wherein said applying said plurality of metal contacts provides an array of insulator/metal bonding islands disposed on top of said array of insulating islands, said array of insulator/metal bonding islands operating to provide direct electrical contact between the array of epoxy bonds and the semiconductor die.

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