Self-organized formation of quantum dots of a material on a substrate

Abstract

Systems and methods are described for fabricating arrays of quantum dots. A method for making a quantum dot device, includes: forming clusters of atoms on a substrate; and charging the clusters of atoms such that the clusters of atoms repel one another. The systems and methods provide advantages because the quantum dots can be ordered with regard to spacing and/or size.

What is claimed is:  
     
         1 . A method, comprising: 
 forming clusters of atoms that are coupled to at least a portion of a substrate;    and charging the clusters of atoms such that the clusters of atoms repel one another.    
     
     
         2 . The method of    claim 1   , wherein charging the clusters of atoms causes the clusters of atoms to become spatially ordered.  
     
     
         3 . The method of    claim 1   , wherein charging the clusters of atoms includes removing electrons from the clusters of atoms.  
     
     
         4 . The method of    claim 3   , wherein the electrons are removed by photoionization.  
     
     
         5 . The method of    claim 1   , wherein charging the clusters of atoms includes adding electrons to the clusters of atoms.  
     
     
         6 . The method of    claim 5   , wherein the electrons are added with an electron gun.  
     
     
         7 . The method of    claim 1   , further comprising forming a buffer layer on the substrate before forming the clusters of atoms, wherein forming clusters of atoms that are coupled to at least the portion of the substrate includes forming the clusters of atoms on the buffer layer.  
     
     
         8 . The method of    claim 7   , wherein forming the buffer layer includes condensing a buffer gas.  
     
     
         9 . The method of    claim 8   , wherein the buffer gas includes at least one inert gas.  
     
     
         10 . The method of    claim 7   , further comprising removing the buffer layer after charging the clusters of atoms.  
     
     
         11 . The method of    claim 10   , wherein removing the buffer layer includes raising a temperature of the buffer layer.  
     
     
         12 . The method of    claim 1   , further comprising growing the clusters of atoms after charging the clusters of atoms.  
     
     
         13 . The method of    claim 1   , wherein the atoms are selected from the group consisting of Fe, Co, Ni, Pd, Ru, Rh, Au, Ag, Ge, Si, In, As, and Ga.  
     
     
         14 . The method of    claim 1   , wherein the substrate includes at least one material selected from the group consisting of FeMn alloy, Cu, Au, Ag, Si, and GaAs.  
     
     
         15 . A quantum dot device made by a process, comprising: 
 forming clusters of atoms coupled to at least a portion of a substrate; and    charging the clusters of atoms such that the clusters of atoms repel one another.    
     
     
         16 . The quantum dot device of    claim 15   , wherein charging the clusters of atoms causes the clusters of atoms to become spatially ordered.  
     
     
         17 . The quantum dot device of    claim 15   , wherein charging the clusters of atoms includes removing electrons from the clusters of atoms.  
     
     
         18 . The quantum dot device of    claim 17   , wherein the electrons are removed by photoionization.  
     
     
         19 . The quantum dot device of    claim 15   , wherein charging the clusters of atoms includes adding electrons to the clusters of atoms.  
     
     
         20 . The quantum dot device of    claim 19   , wherein the electrons are added with an electron gun.  
     
     
         21 . The quantum dot device of    claim 15   , further comprising forming a buffer layer on the substrate before forming the clusters of atoms, wherein forming clusters of atoms that are coupled to at least the portion of the substrate includes forming the clusters of atoms on the buffer layer.  
     
     
         22 . The quantum dot device of    claim 21   , wherein forming the buffer layer includes condensing a buffer gas.  
     
     
         23 . The quantum dot device of    claim 22   , wherein the buffer gas includes at least one inert gas.  
     
     
         24 . The quantum dot device of    claim 21    further comprising removing the buffer layer after charging the clusters of atoms.  
     
     
         25 . The quantum dot device of    claim 24   , wherein removing the buffer layer includes raising a temperature of the buffer layer.  
     
     
         26 . The quantum dot device of    claim 15   , further comprising growing the clusters of atoms after charging the clusters of atoms.  
     
     
         27 . The quantum dot device of    claim 15   , wherein the atoms are selected from the group consisting of Fe, Co, Ni, Pd, Ru, Rh, Au, Ag, Ge, Si, In, As, and Ga.  
     
     
         28 . The quantum dot device of    claim 15   , wherein the substrate includes at least one material selected from the group consisting of FeMn alloy, Cu, Au, Ag, Si, and GaAs.