US2001035566A1PendingUtilityA1
Semiconductor device and process for producing the same
Est. expiryAug 4, 2018(expired)· nominal 20-yr term from priority
Inventors:Takehiro Kimura
H10W 90/734H10W 90/724H10W 74/15H10W 74/00H10W 72/9415H10W 72/07236H10W 72/07232H10W 72/01225H10W 72/252H10W 72/90H10W 72/073H10W 70/681H10W 70/68H10W 72/9445H10W 90/701H10W 90/00
35
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Claims
Abstract
A semiconductor device has a substrate for bumps having a first and a second surface opposite to each other. At least one groove or a plurality of holes are formed at the first surface of the substrate for bumps. A semiconductor chip is mounted on the second surface of the substrate for bumps. The semiconductor chip and the substrate for bumps are bonded by an adhesive. A plurality of bumps are formed on the first surface of the substrate for bumps.
Claims
exact text as granted — not AI-modifiedI claim:
1 . A process for producing a semiconductor device, comprising the steps of:
forming a first bump on an electrode of a semiconductor chip, depositing an adhesive on a first surface of a substrate for bumps, said substrate for bumps having a first electrode arranged on said first surface and to be connected to said first bump, and a second electrode arranged on a second surface opposite to said first surface, making a groove inside said substrate for bumps, bonding said semiconductor chip and said substrate for bumps to each other with said adhesive while connecting said first electrode and said first bump to each other, and forming a second bump on said second electrode.
2 . The process for producing a semiconductor device according to claim 1 , which further comprising the step of removing an unnecessary portion present at the edge of said substrate for bumps.
3 . The process for producing a semiconductor device according to claim 1 , wherein the step of making said groove comprises the step of stamping a predetermined area of said substrate for bumps.
4 . The process for producing a semiconductor device according to claim 1 , wherein the step of making said groove comprises the step of cutting a predetermined area of said substrate for bumps.
5 . The process for producing a semiconductor device according to claim 1 , which further comprising the step of making a groove in said adhesive as a subsequent step of the step of making said groove inside said substrate for bumps.Join the waitlist — get patent alerts
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