Arc chamber for an ion implantation system

Abstract

The present invention relates to the fabrication of materials and structures having selected mechanical, thermal and electrical properties. More particularly, the invention relates to the use of these materials and structures in ion implantation systems. Structures comprising boron material provide components for use in implanters including arc chambers with which a beam of ions is generated for implantation into a target such as a semiconductor wafer.

What is claimed is:  
     
         1 . A method of fabricating a boron structure for an ion source comprising: 
 positioning a substrate in a processing chamber;    forming a boron material on a surface of the substrate to form a composite structure;    removing the boron material from the chamber; and    assembling an ion source housing with the boron material.    
     
     
         2 . The method of    claim 1    further comprising machining the composite structure.  
     
     
         3 . The method of    claim 1    wherein the forming step comprises depositing boron in a vacuum chamber.  
     
     
         4 . The method of    claim 1    further comprising depositing a film having a thickness in the range of 0.5 to 3.0 mm.  
     
     
         5 . The method of    claim 1    wherein the substrate comprises graphite.  
     
     
         6 . The method of    claim 1    further comprising forming an aperture in the substrate structure to define a beam path for ions exiting the ion source.  
     
     
         7 . The method of    claim 1    further comprising: 
 forming a plurality of composite boron structures; and  
 assembling the plurality of structures to provide an ion source chamber.  
 
     
     
         8 . The method of    claim 1    further comprising depositing a amorphous boron film having a density of at least 50% of maximum density.  
     
     
         9 . The method of    claim 1    further comprising forming the boron material using a chemical vapor deposition process.  
     
     
         10 . The method of    claim 1    further comprising providing a chemical vapor deposition reactor, providing a boron containing gas within the reactor and heating the substrate.  
     
     
         11 . The method of    claim 1    further comprising forming an amorphous boron material on the substrate.  
     
     
         12 . The method of    claim 10    further comprising depositing the boron material at a temperature of less than about 1500° C. to form an amorphous material.  
     
     
         13 . An ion source comprising: 
 an ion source housing including an amorphous boron material having a density of at least 50% of the maximum density of boron;    a cathode;    an anode; and    an aperture through which ions exit the ion source.    
     
     
         14 . The ion source of    claim 13    wherein the boron material comprises a layer having a thickness in a range of 0.5 mm to 3.0 mm.  
     
     
         15 . The ion source of    claim 13    wherein the boron material is on a substrate.  
     
     
         16 . The ion source of    claim 13    wherein the ion source is a Bernas source.  
     
     
         17 . The ion source of    claim 13    wherein the housing comprises a plurality of assembled boron components.  
     
     
         18 . A method for chemical vapor deposition of a boron structure for an ion source comprising: 
 positioning a substrate in a chemical vapor deposition chamber;    depositing a boron material in the chamber;    removing the boron material from the chamber; and    assembling an ion source housing with the boron material.    
     
     
         19 . The method of    claim 18    further comprising heating a substrate in the chamber on which the boron material is deposited.  
     
     
         20 . The method of    claim 19    wherein the heating step comprises inductively heating the substrate.