US2001042925A1PendingUtilityA1

Wire bonding method and apparatus, and semiconductor device

38
Priority: May 12, 1998Filed: Jul 25, 2001Published: Nov 22, 2001
Est. expiryMay 12, 2018(expired)· nominal 20-yr term from priority
Inventors:Noriaki YamamotoYukinori TanedaHirohisa YamamuraAkio YasukawaOsamu SuzukiTatsuya Shigemura
H10W 72/552H10W 72/884H10W 72/5445H10W 72/5475H10W 72/5524H10W 72/5522H10W 72/59H10W 90/754H10W 72/5363H10W 72/07533H10W 72/01551H10W 72/075H10W 72/07521H10W 72/07502H10W 72/07141H10W 72/07168H10W 90/734H05K 13/06
38
PatentIndex Score
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Claims

Abstract

A wire bonding method and apparatus implement the flatly thinner plastic deformation for the joint section of a wire, which has a diameter ranging 100-600 μm, on its feed side, feed out and position the flatly deformed wire joint section to a target joint surface, and join the wire to it by pressing the positioned wire joint section, with vibration being applied, onto the joint surface with a ultrasonic wire bonder. A high-power semiconductor device fabricated based on this scheme has a long life of wire joints.

Claims

exact text as granted — not AI-modified
What is claimed is:  
     
         1 . A wire bonding method comprising the steps of: 
 implementing the flatly thinner plastic deformation for the joint section of a wire on the feed side thereof; and    joining the wire to a target joint surface by feeding out and positioning the flatly deformed wire joint section processed by said wire deforming step to the target joint surface, and pressing the positioned wire joint section, with vibration being applied, onto the target joint surface with a ultrasonic wire bonder.    
     
     
         2 . A wire bonding method according to    claim 1   , wherein the wire has a diameter ranging from 100 to 600 μm.  
     
     
         3 . A wire bonding method according to    claim 1   , wherein the wire is made of aluminum or aluminum alloy.  
     
     
         4 . A wire bonding method according to    claim 1   , wherein said wire deforming step implements the flatly thinner plastic deformation for the joint section of the wire at a degree of 2 or more in terms of deformation factor W/D, where W is the width of deformed wire at the joint section and D is the original wire diameter.  
     
     
         5 . A wire bonding method according to    claim 1   , wherein said wire joining step joins the joint section of the wire to the target joint surface at a deformation factor W/D of 2 or more, where W is the width of deformed wire at the joint section and D is the original wire diameter.  
     
     
         6 . A wire bonding method according to    claim 1   , wherein said wire deforming step implements the flatly thinner plastic deformation for the joint section of the wire at a degree in the range from 4 to 6 in terms of deformation factor W/D, where W is the width of deformed wire at the joint section and D is the original wire diameter.  
     
     
         7 . A wire bonding method according to    claim 1   , wherein said wire joining step joins the joint section of the wire to the target joint surface at a deformation factor W/D in the range from 4 to 6, where W is the width of deformed wire at the joint section and D is the original wire diameter.  
     
     
         8 . A wire bonding method comprising the steps of: 
 implementing the flatly thinner plastic deformation for the joint section of a wire on the feed side thereof to match with an intended length of wire loop; and    joining the wire to a target joint surface by feeding out and positioning the flatly deformed wire joint section processed by said wire deforming step to the target joint surface, and pressing the positioned wire joint section, with vibration being applied, onto the target joint surface with a ultrasonic wire bonder.    
     
     
         9 . A wire bonding method according to    claim 8   , wherein the wire has a diameter ranging from 100 to 600 μm.  
     
     
         10 . A wire bonding method according to    claim 8   , wherein the wire is made of aluminum or aluminum alloy.  
     
     
         11 . A wire bonding method according to    claim 8   , wherein said wire deforming step implements the flatly thinner plastic deformation for the joint section of the wire at a degree of 2 or more in terms of deformation factor W/D, where W is the width of deformed wire at the joint section and D is the original wire diameter.  
     
     
         12 . A wire bonding method according to    claim 8   , wherein said wire joining step joins the joint section of the wire to the target joint surface at a deformation factor W/D of 2 or more, where W is the width of deformed wire at the joint section and D is the original wire diameter.  
     
     
         13 . A wire bonding method according to    claim 8   , wherein said wire deforming step implements the flatly thinner plastic deformation for the joint section of the wire at a degree in the range from 4 to 6 in terms of deformation factor W/D, where W is the width of deformed wire at the joint section and D is the original wire diameter.  
     
     
         14 . A wire bonding method according to    claim 8   , wherein said wire joining step joins the joint section of the wire to the target joint surface at a deformation factor W/D in the range from 4 to 6, where W is the width of deformed wire at the joint section and D is the original wire diameter.  
     
     
         15 . A wire bonding method comprising the steps of: 
 implementing the flatly thinner plastic deformation for a wire;    feeding out and positioning the flatly deformed wire joint section processed by said wire deforming step to a target joint surface, and holding the wire; and    joining the wire to the target joint surface by releasing the hold of the wire and pressing the positioned wire joint section, with vibration being applied, onto the target joint surface with a ultrasonic wire bonder.    
     
     
         16 . A wire bonding apparatus comprising: 
 means of implementing the flatly thinner plastic deformation for the joint section of a wire on the feed side thereof; and    means of joining the wire to a target joint surface by feeding out and positioning the flatly deformed wire joint section processed by said wire deforming means to the target joint surface, and pressing the positioned wire joint section, with vibration being applied, onto the target joint surface with a ultrasonic wire bonder.    
     
     
         17 . A wire bonding apparatus according to    claim 16   , wherein said wire deforming means includes an upper mold and a lower mold, with one mold being moved to another mold by means of a driving device so that the wire is deformed.  
     
     
         18 . A wire bonding apparatus according to    claim 17   , wherein said one mold has the formation of a V-shaped groove and has slope sections at the wire inlet and outlet thereof.  
     
     
         19 . A wire bonding apparatus according to    claim 17   , wherein said one mold has the formation of a flat groove and has slope sections at the wire inlet and outlet thereof.  
     
     
         20 . A wire bonding apparatus according to    claim 16   , wherein said joining means includes a wire press section having a V-shaped groove.  
     
     
         21 . A wire bonding apparatus according to    claim 16   , wherein said joining means includes a wire press section having a flat groove.  
     
     
         22 . A wire bonding apparatus according to    claim 16   , wherein the wire has a diameter ranging from 100 to 600 μm.  
     
     
         23 . A wire bonding apparatus according to    claim 16   , wherein said wire deforming means implements the flatly thinner plastic deformation for the joint section of the wire at a degree of 2 or more in terms of deformation factor W/D, where W is the width of deformed wire at the joint section and D is the original wire diameter.  
     
     
         24 . A wire bonding apparatus according to    claim 16   , wherein said wire deforming means implements the flatly thinner plastic deformation for the joint section of the wire at a degree in the range from 4 to 6 in terms of deformation factor W/D, where W is the width of deformed wire at the joint section and D is the original wire diameter.  
     
     
         25 . A semiconductor device having a wire joint surface of semiconductor chip, to which is joined a wire by ultrasonic wire bonding with the prior rendition of flatly thinner plastic deformation for the joint section of the wire at a degree of 2 or more in terms of deformation factor W/D, where W is the width of deformed wire at the joint section and D is the original wire diameter.  
     
     
         26 . A semiconductor device having a wire joint surface of semiconductor chip, to which is joined a wire by ultrasonic wire bonding with the prior rendition of flatly thinner plastic deformation for the joint section of the wire at a degree in the range from 4 to 6 in terms of deformation factor W/D, where W is the width of deformed wire at the joint section and D is the original wire diameter.  
     
     
         27 . A semiconductor device according to    claim 25   , wherein said wire diameter D ranges from 100 to 600 μm.  
     
     
         28 . A semiconductor device according to    claim 26   , wherein said wire diameter D ranges from 100 to 600 μm.  
     
     
         29 . A semiconductor device according to    claim 25   , wherein the wire is made of aluminum or aluminum alloy.  
     
     
         30 . A semiconductor device according to    claim 26   , wherein the wire is made of aluminum or aluminum alloy.  
     
     
         31 . A semiconductor device comprising a high-power semiconductor device which includes: 
 a positive terminal and an output terminal which are fixed on an insulation substrate;    a first power element and a second diode which are joined to said positive terminal, and a second power element and a first diode which are joined to said output terminal; and    a negative terminal which is fitted on said insulation substrate through an insulator,    said first power element having its emitter electrode connected to said output terminal by wire bonding, said second diode having its cathode electrode connected to said output terminal by wire bonding, said second power element having its emitter electrode connected to said negative terminal by wire bonding, and said first diode having its anode electrode connected to said negative terminal by wire bonding,    wherein wires to be joined by ultrasonic wire bonding to the joint surfaces of said first and second power elements and said first and second diodes are rendered at the joint sections thereof the flatly thinner plastic deformation at a degree of 2 or more in terms of deformation factor W/D, where W is the width of deformed wire at the joint section and D is the original wire diameter.    
     
     
         32 . A semiconductor device comprising a high-power semiconductor device which includes: 
 a positive terminal and an output terminal which are fixed on an insulation substrate;    a first power element and a second diode which are joined to said positive terminal, and a second power element and a first diode which are joined to said output terminal; and    a negative terminal which is fitted on said insulation substrate through an insulator,    said first power element having its emitter electrode connected to said output terminal by wire bonding, said second diode having its cathode electrode connected to said output terminal by wire bonding, said second power element having its emitter electrode connected to said negative terminal by wire bonding, and said first diode having its anode electrode connected to said negative terminal by wire bonding,    wherein wires to be joined by ultrasonic wire bonding to the joint surfaces of said first and second power elements and said first and second diodes are rendered at the joint sections thereof the flatly thinner plastic deformation at a degree in the range from 4 to 6 in terms of deformation factor W/D, where W is the width of deformed wire at the joint section and D is the original wire diameter.    
     
     
         33 . A semiconductor device according to    claim 31   , wherein said wire diameter D ranges from 100 to 600 μm.  
     
     
         34 . A semiconductor device according to    claim 32   , wherein said wire diameter D ranges from 100 to 600 μm.  
     
     
         35 . A semiconductor device according to    claim 31   , wherein the wire is made of aluminum or aluminum alloy.  
     
     
         36 . A semiconductor device according to    claim 32   , wherein the wire is made of aluminum or aluminum alloy.

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