Method of chemical mechanical polishing

Abstract

A method of planarizing a substrate employs two separate chemical mechanical polishing (CMP) steps. In the first CMP step, the substrate is polished using a first CMP slurry solution and a polishing pad. A diluting solution is then applied to the polishing pad to remove slurry of the first CMP step. In the second CMP step, after applying the diluting solution to the polishing pad to remove the first slurry, second CMP slurry solution is applied to the polishing pad to facilitate additional planarization of the substrate. In a particular embodiment of this invention, the diluting solution comprises a buffer solution having a pH level corresponding to a pH level of one of the first or second CMP slurry solution. In accordance with another aspect of this embodiment, a plurality of different diluting solutions are applied to the polishing pad intermediate the respective first and second CMP steps.

What is claimed is:  
     
         1 . A method of chemically-mechanically planarizing a substrate, comprising steps of: 
 positioning said substrate against a polishing pad;    supplying first slurry to said polishing pad;    planarizing said substrate with said polishing pad and said first slurry;    supplying a buffer solution to said polishing pad to at least partially cleanse said polishing pad;    supplying second slurry to said polishing pad; and    further planarizing said substrate with said polishing pad and said second slurry.    
     
     
         2 . A method according to    claim 1   , further comprising supplying a diluting solution to said polishing pad to cleanse said polishing pad of at least a portion of said first slurry.  
     
     
         3 . A method of polishing a substrate, comprising the steps of: 
 positioning said substrate against a polishing surface;    polishing said substrate with said polishing surface and a first polishing solution;    using a buffer solution to at least partially cleanse said polishing surface; and    further polishing said substrate with said polishing surface and a second, different polishing solution.    
     
     
         4 . A method according to    claim 3   , wherein at least one of said polishings comprises mechanical planarization.  
     
     
         5 . A method according to    claim 3   , wherein at least one of said polishings comprises chemical-mechanical planarization.  
     
     
         6 . A method according to    claim 3   , wherein at least one of said first and said second polishing solutions comprises a slurry mixture having mechanical particles suspended therein.  
     
     
         7 . A method according to    claim 3   , further comprising providing one of an acidic or basic pH for said first polishing solution, and the other one of said acidic or basic pH for said second polishing solution.  
     
     
         8 . A method according to    claim 3   , further comprising moving said substrate relative and against said polishing surface during said cleansing thereof with said buffer solution.  
     
     
         9 . A method of planarizing a substrate having at least one layer of material, said method comprising the steps of: 
 polishing the substrate using a polishing surface and a first planarization mixture to remove a first portion of said one layer;    using a diluting solution to cleanse the polishing surface of at least a portion of said first planarization mixture; and    further polishing the substrate using the polishing surface and a second planarization mixture to remove a second portion of said one layer.    
     
     
         10 . A method according to    claim 9   , further comprising moving said substrate relative and against said polishing surface during the cleansing thereof with said diluting solution.  
     
     
         11 . A method according to    claim 10   , further comprising providing a buffer solution as said diluting solution.